A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI:10.1109/RFIC.1999.805247

D. Ingram, Y.C. Chen, J. Kraus, B. Brunner, B. Allen, H. Yen, K. Lau

引用次数: 60

Abstract

Presented is the development of a 2-stage 427 mW (26.3 dBm), 19% PAE compact W-band InP monolithic microwave integrated circuit (MMIC) power amplifier with an associated power gain of 8.9 dB. 20% PAE with output power of 407 mW (26.1 dBm) was achieved when the amplifier was biased for optimal efficiency. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-/spl mu/m InGaAs/InAlAs/InP HEMT technology. InP amplifier, though operates at lower drain voltage, but it delivers compatible power with double the PAE of its GaAs counter-part.

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427mw, 20%紧凑w波段InP HEMT MMIC功率放大器

介绍了一种2级427mw (26.3 dBm)， 19% PAE的紧凑w波段InP单片微波集成电路(MMIC)功率放大器，相关功率增益为8.9 dB。当放大器偏置以获得最佳效率时，输出功率为407 mW (26.1 dBm)， PAE为20%。这些MMIC放大器采用0.15-/spl mu/m InGaAs/InAlAs/InP HEMT技术在2 mil厚的衬底上制造。InP放大器虽然工作在较低的漏极电压下，但它提供的兼容功率是GaAs等效器件的两倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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