1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)最新文献_第2页

A micro-power CMOS RF front-end for embedded wireless devices 用于嵌入式无线设备的微功率CMOS射频前端

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805230

R. Rofougaran, Tsung-Hsien Lin, F. Newberg, W. Kaiser

引用次数: 6

A compact direct conversion receiver for C-band wireless applications 用于c波段无线应用的紧凑型直接转换接收器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805232

B. Matinpour, J. Laskar

引用次数: 15

Low noise first-order active recursive filter 低噪声一阶有源递归滤波器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805264

H. Ezzedine, W. Mouzannar, L. Billonnet, B. Jarry, P. Guillon

引用次数: 4

A low power 15 GHz frequency divider in a 0.8 /spl mu/m silicon bipolar production technology 采用0.8 /spl mu/m硅双极生产技术的低功耗15ghz分频器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805237

H. Knapp, W. Wilhelm, M. Wurzer

引用次数: 5

Up- and down-converter chip set for LMDS using three-dimensional masterslice MMIC technology 采用三维主片MMIC技术的LMDS上下转换器芯片组

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805257

I. Toyoda, F. Sugihara, Y. Maki, Y. Imai

引用次数: 9

cdmaOne(R) (IS-95) technology overview and evolution cdmaOne(R) (IS-95)技术概述及演进

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805273

D. Terasawa, E. Tiedemann

引用次数: 4

Packaging technologies for RFICs: current status and future trends rfic封装技术:现状与未来趋势

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805228

A. Imhoff

{"title":"Packaging technologies for RFICs: current status and future trends","authors":"A. Imhoff","doi":"10.1109/RFIC.1999.805228","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805228","url":null,"abstract":"In the current wireless market, competitive pressures are driving the electrical performance of RF integrated circuit (RFIC) devices to new levels. At the same time, the demands placed on packaging of these RFICs have caused more resources to be focused on solutions. The result has been that high frequency packaging is called upon to provide low cost, thermally efficient, miniaturized products for a wide range of wireless telecommunications applications. The packaging of RFICs covers a wide range of technologies, with a number showing promise for future developments. The end applications for these packaged devices range from fixed base systems to high portability, handheld uses. Both types require that aggressive performance and economic consideration be paid to packaging technique. The dominant package options are the single chip plastic encapsulated RFIC and its cousin, the ceramic package. Advanced package technologies include the many forms of multiple chip modules (MCM), leadless array packaging (including ball grid array (BGA) and near-chip scale pages), as well as thermally enhanced packaging in ceramic and laminate substrate materials. In looking ahead to the next generations of packages, a key determinant lies on the road to advanced packaging for RFICs. System level integration and manufacturing technology for wireless products will likely remain primarily surface mount technology (SMT). With this constraint; smaller, higher levels of device integration, increased thermal capability and integration will place increased burdens on packaging technology. Some insights into potential emerging technologies and their enabling requirements will be offered.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121540814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

High performance D-band (118 GHz) monolithic low noise amplifier 高性能d波段(118ghz)单片低噪声放大器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805248

M. Nishimoto, M. Sholley, H. Wang, R. Lai, M. Barsky, D. Streit, Y. Chung, M. Aust, B. Osgood, R. Raja, C. Gage, T. Gaier, K. Lee

引用次数: 24

Ceramic technology for integrated packaging for wireless 无线集成封装陶瓷技术

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805240

D. Amey, P. Barnwell, R. Brown, F. Gaughan, S. Horowitz, A. London, R. Novak, D. Slutz, D. Wilcox

引用次数: 11

15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range 15 dB增益，DC-20 GHz InP HBT平衡模拟混频器和可变增益放大器，动态范围为27 dB

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI: 10.1109/RFIC.1999.805249

K. Kobayashi, A. Gutierrez-Aitken, J. Cowles, B. Tang, R. Desrosiers, V. Medvedev, L. Tran, T. Block, A. Oki, D. Streit

{"title":"15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range","authors":"K. Kobayashi, A. Gutierrez-Aitken, J. Cowles, B. Tang, R. Desrosiers, V. Medvedev, L. Tran, T. Block, A. Oki, D. Streit","doi":"10.1109/RFIC.1999.805249","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805249","url":null,"abstract":"This paper reports on a DC-20 GHz InP HBT active mixer which is believed to benchmark the highest gain-BW product (GBP) so far reported for a direct-coupled analog mixer IC. The InP HBT active mixer is based on the Gilbert cell and integrates RF, LO and IF amplifiers. High speed 70 GHz f/sub T/ and 160 GHz f/sub max/ InP HBT devices along with microwave matching accounts for its record performance. Operated as a down-converter mixer, the MMIC achieves an RF bandwidth from DC-20 GHz with 15.3 dB gain and benchmarks a 10 dB improvement in GBP over state-of-the-art analog mixer ICs. The LO-IF isolation is >17 dB with the LO and IF amplifiers and is >32 dB for the internal mixer cell up to 20 GHz. Excellent 2-2 spur suppression of >20 dBc is also achieved near P/sub 1dB/. The analog multiplier was also operated as a variable gain amplifier and achieved DC-18 GHz BW, 20 dB gain, 12 dBm IP3, and >25 dB of dynamic range. Single-ended peak-to-peak output voltage of 600 mV is obtained with a /spl plusmn/35 mV 15 Gb/s 2/sup 5/-1 PRBS input. The InP-based analog multiplier IC is an attractive building block for future high data rate direct-digital modulator-demodulator and receiver applications for satellite, LMDS, and fiber-telecommunication systems.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114076636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11