高性能d波段(118ghz)单片低噪声放大器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI:10.1109/RFIC.1999.805248

M. Nishimoto, M. Sholley, H. Wang, R. Lai, M. Barsky, D. Streit, Y. Chung, M. Aust, B. Osgood, R. Raja, C. Gage, T. Gaier, K. Lee

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引用次数: 24

摘要

本文介绍了采用0.1-/spl μ m假晶InGaAs/InAlAs/InP HEMT技术设计的具有低噪声性能的118 GHz放大器的结果。单端固定118 GHz LNA在112.5 ~ 119.5 GHz范围内的NF值为3.8 ~ 4.5 dB，相关增益大于14.5 dB。在110 ~ 130 GHz范围内实现了增益为12 dB、回波损耗为9 dB的片上平衡LNA。

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High performance D-band (118 GHz) monolithic low noise amplifier

This paper presents the results of 118 GHz amplifier designs with state of art low noise performance using 0.1-/spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT technology. A single ended fixtured 118 GHz LNA demonstrated 3.8-4.5 dB NF with an associated gain of greater than 14.5 dB from 112.5 to 119.5 GHz. A on-wafer balanced LNA with gain of 12 dB, return loss of 9 dB from 110 to 130 GHz was also demonstrated.

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来源期刊

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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