采用0.8 /spl mu/m硅双极生产技术的低功耗15ghz分频器

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI:10.1109/RFIC.1999.805237

H. Knapp, W. Wilhelm, M. Wurzer

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引用次数: 5

摘要

提出了一种低功耗静态分频器，分频比为8，工作频率高达15 GHz，在3.6 V至6 V电源下仅消耗22 mA。它采用传统的0.8 /spl mu/m硅双极技术制造，截止频率为25 GHz。该芯片安装在SOT363封装中。

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A low power 15 GHz frequency divider in a 0.8 /spl mu/m silicon bipolar production technology

A low power static frequency divider with a divide ratio of 8 operating up to 15 GHz while consuming only 22 mA from a 3.6 V to 6 V supply is presented. It is manufactured in a conventional 0.8 /spl mu/m silicon bipolar technology with a cut-off frequency of 25 GHz. The chip is mounted in a SOT363 package.

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1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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