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1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)最新文献

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A 5.2 GHz variable gain LNA MMIC for adaptive antenna combining 一种用于自适应天线组合的5.2 GHz可变增益LNA MMIC
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805270
F. Ellinger, U. Lott, W. Bachtold
{"title":"A 5.2 GHz variable gain LNA MMIC for adaptive antenna combining","authors":"F. Ellinger, U. Lott, W. Bachtold","doi":"10.1109/RFIC.1999.805270","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805270","url":null,"abstract":"A variable gain LNA was designed for HIPERLAN I. A noise figure of only 1.7 dB is measured at a gain of 14.5 dB and a power consumption of 9 mW (V/sub DC/=3 V, I/sub DC/=3 mA). Over an amplitude control range of 20 dB, the third order intercept point at the input is higher than -10 dBm, the spurious free dynamic range is higher than 55 dB and noise performance does not effectively degrade. Noise and intermodulation performance of different amplitude control methods as well as the required resolutions for D/A converters are investigated.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121669129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Silicon UTSi(R) CMOS RFIC for CDMA wireless communications systems 用于CDMA无线通信系统的硅UTSi(R) CMOS RFIC
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805266
P. Rodgers, M. Megahed, C. Page, J. Wu, D. Staab
{"title":"Silicon UTSi(R) CMOS RFIC for CDMA wireless communications systems","authors":"P. Rodgers, M. Megahed, C. Page, J. Wu, D. Staab","doi":"10.1109/RFIC.1999.805266","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805266","url":null,"abstract":"The design and performance of a UTSi CMOS down converter RFIC for CDMA applications is presented. The down converter consists of a two stage LNA, RF switch, and mixer integrated with passive matching components. The performance of the building blocks has been evaluated. The results show that the stringent requirements for linearity at low power consumption required for CDMA can be achieved using UTSi CMOS technology. By integrating the down converter with a PLL fabricated in the same process, it will be possible to realize a single chip transceiver IC. The results show that Silicon CMOS UTSi has the on-chip RF performance required for the high level integration of future wireless communications systems.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127877570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
5 GHz SiGe HBT monolithic radio transceiver with tunable filtering 具有可调谐滤波的5 GHz SiGe HBT单片无线电收发器
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805254
S. Voinigescu, M. Copeland, D. Marchesan, P. Popescu, M. Maliepaard
{"title":"5 GHz SiGe HBT monolithic radio transceiver with tunable filtering","authors":"S. Voinigescu, M. Copeland, D. Marchesan, P. Popescu, M. Maliepaard","doi":"10.1109/RFIC.1999.805254","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805254","url":null,"abstract":"A W-CDMA compliant, fully integrated 5 GHz radio transceiver was realized in SiGe technology with on-chip, tunable, VCO-tracking filters. It allows for wide band, up to 20 MHz, modulation schemes demonstrating a SSB receiver NF of 5.9 dB, 40 dB on-chip image rejection, IP1 of -22 dBm and larger than 70 dB LO-RF isolation. The VCO phase noise is -100 dBc/Hz and -128 dBc/Hz at 100 kHz and 5 MHz offset, respectively. The transmitter output compression point is 10 dBm. The image rejection in the transmitter is better than 40 dB and all spurious signals are 40 dB below the carrier.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127046151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
A novel high-Q inductor based on Si 3D MMIC technology and its application 基于Si三维MMIC技术的新型高q电感及其应用
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805267
K. Kamogawa, K. Nishikawa, T. Tokumitsu, M. Tanaka
{"title":"A novel high-Q inductor based on Si 3D MMIC technology and its application","authors":"K. Kamogawa, K. Nishikawa, T. Tokumitsu, M. Tanaka","doi":"10.1109/RFIC.1999.805267","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805267","url":null,"abstract":"A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying the 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10 /spl mu/m thick polyimide layers and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with f/sub max/ of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114310701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
GaAs MESFET dual-gate mixer with active filter design for Ku-band applications GaAs MESFET双栅混频器与有源滤波器设计的ku波段应用
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805271
Chang-Ho Lee, Sangwoo Han, J. Laskar
{"title":"GaAs MESFET dual-gate mixer with active filter design for Ku-band applications","authors":"Chang-Ho Lee, Sangwoo Han, J. Laskar","doi":"10.1109/RFIC.1999.805271","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805271","url":null,"abstract":"We present the design of an active filter to suppress the LO noise, spurious and harmonics of an upconversion mixer for Ku-band (12/spl sim/18 GHz) applications. This filter, when combined with the dual-gate mixer, can replace the need for a balanced topology with comparable performance. The conversion loss and harmonics suppression are improved by more than 15 dB and 20 dB, respectively. Such a filter is more compact and flexible than the widely used balanced topology.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121768077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system 用于ETC系统的片上匹配的塑料封装GaAs MESFET 5.8 GHz接收器前端
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805236
E. Low, H. Nakamura, H. Fujishiro, K. T. Yan
{"title":"A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system","authors":"E. Low, H. Nakamura, H. Fujishiro, K. T. Yan","doi":"10.1109/RFIC.1999.805236","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805236","url":null,"abstract":"A plastic package GaAs MESFET receiver front-end MMIC operating at 5.8 GHz is presented. It has a two stage LNA followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, CG of 20.4 dB, NF of 4.1 dB, and high port-to-port isolations have been achieved. A 3 dB bandwidth of CG is 1 GHz.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128738582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
1.9 GHz/5.8 GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate 基于高阻硅衬底的1.9 GHz/5.8 GHz频段片上匹配Si- mmic低噪声放大器
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI: 10.1109/RFIC.1999.805268
M. Ono, N. Suematsu, S. Kubo, Y. Iyama, T. Takagi, O. Ishida
{"title":"1.9 GHz/5.8 GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate","authors":"M. Ono, N. Suematsu, S. Kubo, Y. Iyama, T. Takagi, O. Ishida","doi":"10.1109/RFIC.1999.805268","DOIUrl":"https://doi.org/10.1109/RFIC.1999.805268","url":null,"abstract":"The use of high resistivity Si substrates, instead of the conventional low resistivity Si substrate, enables one to reduce the loss of spiral inductor for the on-chip matching circuit by 61% at 1.9 GHz and by 78% at 5.8 GHz and to improve gain and noise performance of the BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring to equivalent circuit model extraction. The fabricated 1.9 GHz-band on-chip matching LNA performs 13.4 dB gain, 1.9 dB NF with 2 V, 2 mA DC power and 5.8 GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3 V, 3 mA DC power.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125260717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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