用于900 MHz-2.4 GHz频段无线通信网络的CMOS RF ic

M. Madihian, L. Desclos, T. Drenski, Y. Kinoshita, H. Fujii, T. Yamazaki
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引用次数: 22

摘要

本文研究了用于900 MHz-2.4 GHz无线接入前端应用的一系列CMOS射频集成电路的设计思路和性能结果。开发的集成电路包括天线开关、射频放大器、上下混频器、中频放大器、驱动放大器,以及采用0.25 /spl mu/m CMOS工艺集成这些集成电路的收发器芯片。这些集成电路工作时的电源电压高于4伏,每个晶体管的电流为2-4毫安。在不使用任何片外匹配的情况下,收发器芯片在900 MHz、1.9 GHz和2.4 GHz频段分别具有高于40 dB、32 dB和25 dB的下转换增益,这表明CMOS技术适用于900 MHz-2.4 GHz频段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS RF ICs for 900 MHz-2.4 GHz band wireless communication networks
The present paper concerns with the design consideration and performance results for a series of CMOS RF ICs for 900 MHz-2.4 GHz wireless access front-end application. Developed ICs include an antenna switch, RF amplifier, down- and up-mixers, IF amplifier, driver amplifier, as well as transceiver chips incorporating these ICs using a 0.25 /spl mu/m CMOS process. These ICs operate with a supply voltage higher than 4 V and a current of 2-4 mA per transistor. Without utilizing any off-chip matching, a transceiver chip possesses down- and up-conversion gains higher than 40 dB, 32 dB, and 25 dB, at 900 MHz, 1.9 GHz, and 2.4 GHz, respectively, representing applicability of CMOS technology for the 900 MHz-2.4 GHz frequency band.
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