一种真正的增强模式器件技术，适用于双模双频功率放大器应用

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI:10.1109/RFIC.1999.805255

E. Glass, J. Huang, M. Martinez, W. Peatman, O. Hartin, W. Valentine, M. LaBelle, J. Costa, K. Johnson

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引用次数: 18

摘要

我们开发了一种真正的增强模式AlGaAs/InGaAs异质结构绝缘栅场效应管技术，将单电源操作与最先进的线性度和效率性能相结合，适用于数字和模拟便携式通信。该技术测量的线性度和效率性能与迄今为止报道的PHEMT和HBT器件所取得的结果相当或超过。对于1800 MHz和VDS=3.6 V的NADC调制格式，在+30.6 dBm输出功率、-30 dBc相邻信道功率和-49 dBc备用信道功率下，功率增加效率达到50%。

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A true enhancement mode device technology suitable for dual mode dual band power amplifier applications

We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital and analog portable communications. The measured linearity and efficiency performance of this technology rivals or surpasses the results achieved by PHEMT and HBT devices reported to date. For the NADC modulation format at 1800 MHz and VDS=3.6 V, a power-added efficiency of 50% has been achieved at +30.6 dBm output power, -30 dBc adjacent channel power and -49 dBc alternate channel power.

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来源期刊

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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