一个3v GaAs MESFET单片发射机，具有交叉耦合共源，共门对线性混频器，用于蜂窝手持电话

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1999-06-13 DOI:10.1109/RFIC.1999.805272

Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee

{"title":"一个3v GaAs MESFET单片发射机，具有交叉耦合共源，共门对线性混频器，用于蜂窝手持电话","authors":"Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee","doi":"10.1109/RFIC.1999.805272","DOIUrl":null,"url":null,"abstract":"A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones\",\"authors\":\"Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee\",\"doi\":\"10.1109/RFIC.1999.805272\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.\",\"PeriodicalId\":447109,\"journal\":{\"name\":\"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.1999.805272\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.1999.805272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种具有交叉耦合共源、共栅对FET的线性混频器，并在蜂窝手持电话用GaAs MESFET单片发射机中验证了其性能。在本端输入功率为-5/spl sim/0 dBm时，发射机的实测转换增益为31.2/spl sim/31.6 dB，输出功率为1 dB时的功率增益压缩点为9.5 dBm，在总输出功率为0 dBm时，双音(偏置频率/spl Delta/f=442.5 kHz)三阶互调失真(IMD3)为-47 dBc，电源电压为3 V，电流消耗为43 mA。

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A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones

A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.

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1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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