Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee
{"title":"A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones","authors":"Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee","doi":"10.1109/RFIC.1999.805272","DOIUrl":null,"url":null,"abstract":"A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.1999.805272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.