A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones

Min-Gun Kim, J. Mun, Jong-Won Lim, Chung-Hwan Kim, Chang-Seok Lee, Jaejin Lee
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Abstract

A linear mixer with cross-coupled common-source, common-gate pair FET's was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.
一个3v GaAs MESFET单片发射机,具有交叉耦合共源,共门对线性混频器,用于蜂窝手持电话
提出了一种具有交叉耦合共源、共栅对FET的线性混频器,并在蜂窝手持电话用GaAs MESFET单片发射机中验证了其性能。在本端输入功率为-5/spl sim/0 dBm时,发射机的实测转换增益为31.2/spl sim/31.6 dB,输出功率为1 dB时的功率增益压缩点为9.5 dBm,在总输出功率为0 dBm时,双音(偏置频率/spl Delta/f=442.5 kHz)三阶互调失真(IMD3)为-47 dBc,电源电压为3 V,电流消耗为43 mA。
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