2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)最新文献

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Impact of Dopant variations on Junctionless Cylindrical Nanowire FETs 掺杂剂变化对无结圆柱纳米线场效应管的影响
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179876
Ankush Chattopadhyay, Ankita Pathak, P. Mukherjee
{"title":"Impact of Dopant variations on Junctionless Cylindrical Nanowire FETs","authors":"Ankush Chattopadhyay, Ankita Pathak, P. Mukherjee","doi":"10.1109/VLSIDCS47293.2020.9179876","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179876","url":null,"abstract":"This paper presents the effects of variations in doping profile of a junctionless silicon nanowire FET. 3-D simulations are performed using Silvaco TCAD for analyzing the characteristics of the proposed device. A detailed investigation has been reported, based on variants of doping profiles in source, substrate and drain regions. Gaussian and uniform doping profiles are assumed to govern the carrier concentrations in source/drain and substrate alternatively. The analog performances of the devices have been evaluated based on transfer characteristics, transconductance, threshold voltage, on-off current ratio, intrinsic capacitances and cut-off frequency. The study concludes with quantitative data that justifies the acceptability of a device with the aforesaid variation.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127319752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Determination of Structural, Electronic, Optical and Mechanical Properties of Brookite TiO2 Using Various Exchange-Correlation 用各种交换相关法测定钛矿的结构、电子、光学和力学性能
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179928
Neerja Dharmale, S. Chaudhury, C. Pandey, Rupesh Mahamune
{"title":"Determination of Structural, Electronic, Optical and Mechanical Properties of Brookite TiO2 Using Various Exchange-Correlation","authors":"Neerja Dharmale, S. Chaudhury, C. Pandey, Rupesh Mahamune","doi":"10.1109/VLSIDCS47293.2020.9179928","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179928","url":null,"abstract":"This paper presents a study and analysis applicable to structural, electronic, optical and mechanical properties of one of rare variant of Titanium dioxide (TiO2) i.e. brookite using self-consistent Orthogonalized Linear Combination of Atomic Orbitals method (OLCAO) under the framework of Density Functional Theory (DFT). Structural, electronic and mechanical properties are investigated using Generalized Gradient Approximation (GGA) with Perdew-Burke-Ernzerhof (PBE), Perdew-Burke-Ernzerhof solid (PBES), Becke-Perdew86 (BP86), Perdew Wang91(PW91) and Becke88-Perdew Wang91 Correlation(BPW91) as exchange-correlation. Correlation of electronic and optical properties are performed using GGA-PBES and Meta-gga(MGGA)-Tran and Blaha(TB09). The observed data are match up with the previously reported computational as well as experimental data. Obtained lattice parameters using GGA-PBES, Bond length between Ti and O using PBE and BPW91, bandgap value using MGGA-TB09 and bulk modulus using PW91 and BPW91 matches very well with the experimental values. Comparision using GGA-PBES and MGGA- (TBO9) shows that calculated dielectric constant and refractive index as obtained using GGA-PBES are higher than MGGA approach and optical absorption for brookite TiO2 occurs in UV region while absorption spectrum using MGGA shifts the wavelength towards the lower energy band of EM spectrum.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"48 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128905933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design Of High Performance Digital Divider 高性能数字分频器的设计
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179903
Karan Kataria, Sunil Patel
{"title":"Design Of High Performance Digital Divider","authors":"Karan Kataria, Sunil Patel","doi":"10.1109/VLSIDCS47293.2020.9179903","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179903","url":null,"abstract":"In this paper, the design of high performance digital divider based on ancient Indian Vedic mathematics technique is presented. A Vedic mathematics technique called the Parāvartya Yojayet (\"Transpose and Apply\") is applied to obtain the high performance by reducing the propagation delay, area consumption with minimum electric power consumption. The operation of the digital divider division and other performance parameters like propagation delay and electric power consumption were calculated through Xilinx ISE 14.4 Spartan-6 FPGA with 45 nm low-power copper process technology that delivers the best balance of performance, cost, & power. The delay of the obtained 8 ÷4 bit and 16 ÷ 8 bit digital divider was only ~ 4.91 ns (with 0.08 ns slack) & ~ 5.851ns (with 0.02 ns slack), consumed ~1.3586 mW & ~1.73 mW electric power for a LUT utilization of 0.63% & 5% respectively. Computation using Vedic mathematics decreases considerable extent of iterations resulted in minimized delay and power compared to the mostly used non – Vedic (e.g. digit-recurrence, Newton–Raphson, Goldschmidt) & Vedic architectures.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123347385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Realization of Built-In Self Test(BIST) Enabled Memory(RAM) Using VHDL and Implementation in Spartan6 FPGA board 基于VHDL的内置自检(BIST)内存的实现及其在Spartan6 FPGA板上的实现
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179879
Tapas Tewary, Shanu Dey, Supratim Roy
{"title":"Realization of Built-In Self Test(BIST) Enabled Memory(RAM) Using VHDL and Implementation in Spartan6 FPGA board","authors":"Tapas Tewary, Shanu Dey, Supratim Roy","doi":"10.1109/VLSIDCS47293.2020.9179879","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179879","url":null,"abstract":"Built-In Self Test (BIST) is a technique that allows a set up to check itself for any error on its own. BIST is a screening mechanism that places the testing functions physically with the circuit under test (CUT).BIST can make the system-level design process much more simple in essential applications where system reliability is predominant, and \"failure is not an option.\" The decision to execute a critical mission must be made only if the complete system is running without any error. BIST structures generate pseudo random combinations and output results for an exclusive circuit under test are compared. BIST can be implemented on entire designs, design blocks or structures within design blocks. Memory is a complex architecture (fabrication wise) and used in a large number of applications. BIST is basically used to help in the testing of memory with the help of a few extra pins. In fact, while testing a memory using BIST, applying a simple clock signal along with a few pins helps test the entire memory IC. The proposed BIST enabled RAM is designed using VHDL and implemented successfully into SPARTAN 6 Field Programmable Gate Array (FPGA) board.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126218304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Speed Buried Channel In0.53Ga0.47As/InP MOSFET with Corner Spacer for Low Power Applications 高速埋道In0.53Ga0.47As/InP MOSFET与角间隔低功耗应用
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179902
S. Mohanty, Sikha Mishra, M. Mohapatra, G. P. Mishra
{"title":"High Speed Buried Channel In0.53Ga0.47As/InP MOSFET with Corner Spacer for Low Power Applications","authors":"S. Mohanty, Sikha Mishra, M. Mohapatra, G. P. Mishra","doi":"10.1109/VLSIDCS47293.2020.9179902","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179902","url":null,"abstract":"In the nanoscale regime circuit and device performance degrades due to the presence of parasitic capacitance. In the case of scaled devices, short channel effects (SCEs) are substantially reduced by using gate underlap at source and drain side with a significant reduction of drain current. Again, the implementation of the spacer on either side of the gate region helps to realize better drain current with a substantial increase in parasitic capacitance (Cgg), which deteriorates the device performance. In order to overcome these drawbacks, a corner spacer (CS) is introduced in double gate heterostructure MOSFET (DG-HMOSFET), which improves the device characteristics with the reduction in parasitic capacitances. The proposed work presents the comparison among spacer (S) and CS on DG-HMOSFET in order to realize the improvement of device parameters. Thus, the incorporation of high-k on CS- DG-HMOSFET shows the reduction in parasitic capacitance in all directions as compared to S-DG-HMOSFET.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126362085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of All Optical Dual Control Dual SOA TOAD Based 2’s Complement Generator 基于全光双控双SOA TOAD的补码发生器分析
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179909
K. Maji, K. Mukherjee, M. Mandal
{"title":"Analysis of All Optical Dual Control Dual SOA TOAD Based 2’s Complement Generator","authors":"K. Maji, K. Mukherjee, M. Mandal","doi":"10.1109/VLSIDCS47293.2020.9179909","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179909","url":null,"abstract":"In this paper we have proposed and analyzed 4 bit 2’s complement generator using dual control dual SOA TOAD. We have used Gaussian pulse as a control pulse and simulated by MATLAB. The variation of output CR, ER and Q factor with control pulse energy are also shown and explained. High values of these parameters show efficient data processing.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122185833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Development of Aluminium Based Magnetic Composites & Study on Chemical Properties at Sea Water Environment 铝基磁性复合材料的研制及海水环境化学性能研究
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179916
S. Debnath, Rajib Gupta, A. K. Pramanick
{"title":"Development of Aluminium Based Magnetic Composites & Study on Chemical Properties at Sea Water Environment","authors":"S. Debnath, Rajib Gupta, A. K. Pramanick","doi":"10.1109/VLSIDCS47293.2020.9179916","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179916","url":null,"abstract":"Aluminium based metal composites are preferred for different applications for its superior physical, mechanical and chemical properties. This study has taken an effort towards developing aluminium based magnetic composites (also termed as iron- aluminium metal– metal composites) through conventional powder metallurgy (P/M) technique. Presence of various phases after sintering have identified by X-ray diffraction (XRD). Developed composites have considered for physical, mechanical and chemical evaluations into salty environment. Improvement of both density and hardness of developed composites have found out with iron reinforcements. Changes of surface morphology of developed composites due to addition of iron and consequent interaction with seawater have observed and reported.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"100 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113954442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Triple Gate Spin Field-Effect Transistor and its Applications to Digital Logic 三栅自旋场效应晶体管的仿真及其在数字逻辑中的应用
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179894
G. Malik, Mubashir Ahmad, F. A. Khanday, N. Parveen
{"title":"Simulation of Triple Gate Spin Field-Effect Transistor and its Applications to Digital Logic","authors":"G. Malik, Mubashir Ahmad, F. A. Khanday, N. Parveen","doi":"10.1109/VLSIDCS47293.2020.9179894","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179894","url":null,"abstract":"The simulation of Triple Gate Spin-FET having Indium Arsenide as its channel material is performed using its mathematical model in this paper. The simulation results are validated using dc simulations. Later by setting the suitable channels and various other parameters like spin injection, spin detection etc., diverse logic functions are attained. the different inputs are given at the various gate terminals. The functions obtained are implemented using only one multi gate spin-FET. If the same functions would be implemented using conventional CMOS, the number of devices required will be much higher. The functions obtained are also proficient in terms of power and speed as paralleled to the design using VLSI CMOS. The performance of the proposed designed is compared to the already existent VLSI CMOS for the same logic functions in a table.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123818798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Inline Coaxial Probe to RGW Transition in Ku and K Band Ku和K波段RGW跃迁同轴探头设计
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179896
P. Debnath, A. Deyasi, Ujjwal Mondal
{"title":"Design of Inline Coaxial Probe to RGW Transition in Ku and K Band","authors":"P. Debnath, A. Deyasi, Ujjwal Mondal","doi":"10.1109/VLSIDCS47293.2020.9179896","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179896","url":null,"abstract":"The guiding structure which is to be considered for high frequency applications is Gap waveguide. Because of its numerous merits, this technology has become an astounding attraction to many investigators. Limited bandwidth is one of major issue for designing the transition. This paper discusses an Inline transition between coaxial probe to Ridge gap waveguide in Ku and K band using Ansoft HFSS software. Using a simple inline coaxial probe transition a dual band characteristics has been observed with a bandwidth of 200 MHz. A modified L shape transition has been designed which shows 5GHz bandwidth with an overall return loss higher than 15dB and comparatively lower insertion less having magnitude less than 0.9dB been observed. In addition field distribution has been discussed.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131222113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2.5mW Low-Power Dual VCO Quantizer for ∑-∆ Modulator in 0.09μm CMOS 用于0.09μm CMOS∑-∆调制器的2.5mW低功耗双压控振荡器
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI: 10.1109/VLSIDCS47293.2020.9179869
A. Chavan, Sachin Manohar Ranasubhe, Rohit N, H. V. Ravish Aradhya
{"title":"A 2.5mW Low-Power Dual VCO Quantizer for ∑-∆ Modulator in 0.09μm CMOS","authors":"A. Chavan, Sachin Manohar Ranasubhe, Rohit N, H. V. Ravish Aradhya","doi":"10.1109/VLSIDCS47293.2020.9179869","DOIUrl":"https://doi.org/10.1109/VLSIDCS47293.2020.9179869","url":null,"abstract":"Analog to digital converters are an essential requirement for signal processing application as it relates to real world signal that are continuous in nature and convert it into digital form. This paper depicts design and analysis of Dual Voltage Controlled Oscillator (VCO) enabled quantizer loop structure in continuous time ∑-∆ modulator in 0.09μm technology with the use of Cadence Virtuoso tool. The Major element of continuous time ∑-∆ modulator is VCO that converts voltages in to oscillating frequency and a quantizer will quantize the respective frequency to thermometric code. Dual VCO quantizer is designed with 3stage, 5stage and 7stage ring oscillator based VCO and 1-bit quantizer having Logic structure reduced flip flop (LRFF). Maximum Bandwidth of 3stage, 5stage, and 7stage current starved ring oscillator is 40.39MHz, 17.89MHz, and 15.54MHz respectively. Return to Zero DAC (RZ-DAC) block is used as feedback path to dual VCO Quantizer to reduce even harmonics. Result analysis shows that power consumption of the entire design of dual VCO quantizer circuit turns to be 2.15mW for the supply of 1.8V in 0.09μm VLSI technology which is efficient compared to other previous works.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128141136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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