Impact of Dopant variations on Junctionless Cylindrical Nanowire FETs

This paper presents the effects of variations in doping profile of a junctionless silicon nanowire FET. 3-D simulations are performed using Silvaco TCAD for analyzing the characteristics of the proposed device. A detailed investigation has been reported, based on variants of doping profiles in source, substrate and drain regions. Gaussian and uniform doping profiles are assumed to govern the carrier concentrations in source/drain and substrate alternatively. The analog performances of the devices have been evaluated based on transfer characteristics, transconductance, threshold voltage, on-off current ratio, intrinsic capacitances and cut-off frequency. The study concludes with quantitative data that justifies the acceptability of a device with the aforesaid variation.