2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)最新文献_第5页

Deep understanding of random telegraph noise (RTN) effects on SRAM stability 深入了解随机电报噪声对SRAM稳定性的影响

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480513

Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang

引用次数: 7

In0.53Ga0.47As(001)−(2x4) and Si0.5Ge0.5(110) surface passivation by self-limiting deposition of silicon containing control layers 通过自限沉积含硅控制层实现In0.53Ga0.47As(001)−(2x4)和Si0.5Ge0.5(110)表面钝化

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480528

M. Edmonds, T. Kent, S. Wolf, K. Sardashti, M. Chang, J. Kachian, R. Droopad, E. Chagarov, A. Kummel

{"title":"In0.53Ga0.47As(001)−(2x4) and Si0.5Ge0.5(110) surface passivation by self-limiting deposition of silicon containing control layers","authors":"M. Edmonds, T. Kent, S. Wolf, K. Sardashti, M. Chang, J. Kachian, R. Droopad, E. Chagarov, A. Kummel","doi":"10.1109/VLSI-TSA.2016.7480528","DOIUrl":"https://doi.org/10.1109/VLSI-TSA.2016.7480528","url":null,"abstract":"Metal oxide semiconductor field effect transistors (MOSFETs) are diverging from the exclusive use of silicon and germanium to the employment of compound semiconductors such as SiGe and InGaAs to further increase transistor performance. A broader range of channel materials allowing better carrier confinement and higher mobility could be employed if a universal control monolayer (UCM) could be ALD or self-limiting CVD deposited on multiple materials and crystallographic faces. Silicon uniquely bonds strongly to all crystallographic faces of InGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge enabling transfer of substrate dangling bonds to silicon, which may subsequently be passivated by atomic hydrogen. Subsequently, the surface may be functionalized with an oxidant such as HOOH(g) in order to create a UCM terminating Si-OH layer, or a nitriding agent such as N2H4(g) in order to create an Si-Nx diffusion barrier and surface protection layer. This study focuses on depositing saturated Si-Hx, and Si-OH seed layers via two separate self-limiting CVD processes on InGaAs(001)-(2x4), and depositing a Si-Nx seed layer on Si0.5Ge0.5(110) via an ALD process. XPS in combination with STS/STM were employed to characterize the electrical and surface properties of these silicon containing control layers on InGaAs(001)-(2x4) and Si0.5Ge0.5(110) surfaces. MOSCAP device fabrication was performed on n-type InGaAs(001) substrates with and without a Si-Hx passivation control layer deposited by self-limiting CVD in order to determine the effects on Cmax, frequency dispersion, and midgap trap states.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124497606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications 用于非易失性存储器应用的电阻性RAM (RRAM)的功能和可靠性

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480520

G. Molas, G. Piccolboni, M. Barci, B. Traoré, J. Guy, G. Palma, E. Vianello, P. Blaise, J. Portal, M. Bocquet, A. Levisse, B. Giraud, J. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola

引用次数: 6

High-gain, low-voltage BEOL logic gate inverter built with film profile engineered IGZO transistors 高增益，低电压BEOL逻辑门逆变器与薄膜轮廓工程IGZO晶体管

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480534

R. Lyu, Yun-Hsuan Chiu, Horng-Chih Lin, Pei-Wen Li, Tiao-Yuan Huang

引用次数: 8

Advanced metrology and inspection solutions for a 3D world 面向3D世界的先进计量和检测解决方案

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480508

I. Schulmeyer, L. Lechner, A. Gu, R. Estrada, D. Stewart, L. Stern, S. McVey, B. Goetze, U. Mantz, R. Jammy

引用次数: 2

A compact model for the SET parameter variations of oxide RRAM array 氧化物RRAM阵列SET参数变化的紧凑模型

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480503

Lingjun Dai, Huaqiang Wu, B. Gao, H. Qian

引用次数: 2

Doping technology for RRAM — Opportunities and challenges RRAM掺杂技术——机遇与挑战

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480494

B. Magyari-Kope, Dan Duncan, Liang Zhao, Y. Nishi

引用次数: 5

Investigation of local heating effect for 14nm Ge pFinFETs based on Monte Carlo method 基于蒙特卡罗方法的14nm Ge pfinfet局部热效应研究

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI: 10.1109/VLSI-TSA.2016.7480514

L. Yin, Hai Jiang, Lei Shen, Juncheng Wang, G. Du, Xiaoyan Liu

{"title":"Investigation of local heating effect for 14nm Ge pFinFETs based on Monte Carlo method","authors":"L. Yin, Hai Jiang, Lei Shen, Juncheng Wang, G. Du, Xiaoyan Liu","doi":"10.1109/VLSI-TSA.2016.7480514","DOIUrl":"https://doi.org/10.1109/VLSI-TSA.2016.7480514","url":null,"abstract":"FinFET is regarded as one of the most promising device structure for future scaling-down demands. However, heat dispassion is a severe problem for the device performance and reliability in nano-scale FinFETs. Germanium (Ge) is a novel channel material with its high carrier mobility, especially for PMOSFET. However, the bulk thermal conductivity of Ge (52.98Wm-1K-1) is almost 3 times smaller than that of Si (148.6Wm-1K-1)[1], which will lead to more serious heat dispassion problems in Ge devices. What's more, the phonon mean free path is largely decreased in nano-device structure due to increased surface scatterings, which leads to a largely reduced thermal conductivity. Hence, heat dissipation problems will have a large impact on the performance of Ge FinFETs. In this paper, we use 3D Full Band Self-consistent Ensemble Monte Carlo Simulator and 3D Fourier Heat Conduction Solver to study the local heating effects (LHE) and its impact on 14nm Ge SOI pFinFETs. The heat dissipation path is also evaluated. From the simulation results, we find that 14nm Ge SOI FinFETs will experience severe heating problems and heat effects will seriously affect the device performance.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126805274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Doherty techniques for 5G RF and mm-wave power amplifiers 5G射频和毫米波功率放大器的多尔蒂技术

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 1900-01-01 DOI: 10.1109/vlsi-dat.2016.7482588

P. Reynaert, Yuhe Cao, M. Vigilante, P. Indirayanti

引用次数: 9

Trend, technology and architecture of small cell in 5G era 5G时代小蜂窝的趋势、技术和架构

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 1900-01-01 DOI: 10.1109/vlsi-tsa.2016.7480474

Chun-Nan Liu

引用次数: 0