Doping technology for RRAM — Opportunities and challenges

Abstract

Resistive random-access memory (RRAM), one of the most promising candidates for next generation non-volatile memory technology, nowadays still faces a series of challenges including switching-parameter variability, cycling endurance, and data retention. In order to cope with these challenges, ionic doping techniques have been widely explored to achieve better performance and reliability, through fine-tuning the switching material properties. The major factors that potentially affect the forming characteristics of doped transition metal oxides were systematically evaluated with density functional theory (DFT) calculations in conjunction with experimental observations to address the opportunities and challenges in achieving tunable RRAM characteristics.