氧化物RRAM阵列SET参数变化的紧凑模型

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480503

Lingjun Dai, Huaqiang Wu, B. Gao, H. Qian

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引用次数: 2

摘要

建立了一个基于物理的紧凑模型来描述氧化物RRAM器件的参数变化。该模型考虑了氧空位的随机产生和生成能量的变化，是造成SET过程参数波动的主要原因。基于1kb 1T-1R RRAM阵列的实测数据对模型进行了验证。利用该模型模拟了SET电压和ON电阻的周期变化和器件之间的变化，并与实验数据进行了比较。该模型可用于基于RRAM器件的大规模存储阵列和逻辑或安全电路的仿真。

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A compact model for the SET parameter variations of oxide RRAM array

A physics-based compact model is developed to describe the parameter variations of oxide RRAM devices. The stochastic generation of oxygen vacancies and the variation of generation energy are considered in the model for the main reasons of the parameter fluctuation during SET process. The model is verified based on the measured data from 1kb 1T-1R RRAM array. Cycle-to-cycle variation and device-to-device variations of SET voltage and ON resistance are simulated by the model and compared with the experimental data. The model can be used for the simulation of large-scale memory arrays and logic or security circuits based on RRAM devices.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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