用于非易失性存储器应用的电阻性RAM (RRAM)的功能和可靠性

G. Molas, G. Piccolboni, M. Barci, B. Traoré, J. Guy, G. Palma, E. Vianello, P. Blaise, J. Portal, M. Bocquet, A. Levisse, B. Giraud, J. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola
{"title":"用于非易失性存储器应用的电阻性RAM (RRAM)的功能和可靠性","authors":"G. Molas, G. Piccolboni, M. Barci, B. Traoré, J. Guy, G. Palma, E. Vianello, P. Blaise, J. Portal, M. Bocquet, A. Levisse, B. Giraud, J. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola","doi":"10.1109/VLSI-TSA.2016.7480520","DOIUrl":null,"url":null,"abstract":"Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications\",\"authors\":\"G. Molas, G. Piccolboni, M. Barci, B. Traoré, J. Guy, G. Palma, E. Vianello, P. Blaise, J. Portal, M. Bocquet, A. Levisse, B. Giraud, J. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola\",\"doi\":\"10.1109/VLSI-TSA.2016.7480520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.\",\"PeriodicalId\":441941,\"journal\":{\"name\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2016.7480520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

各种RRAM概念目前正在研究中(基于氧化物的RAM,导电桥式RAM),所有这些概念都显示出基于架构和内存堆栈的优点和缺点。由于规范与应用程序密切相关,因此RRAM技术很可能会绑定到特定的细分市场。在本文中,我们讨论了RRAM在非易失性存储器应用中的潜力,其中包括:存储类存储器,嵌入式存储器,可编程逻辑,大容量存储器和神经形态应用。通过实验研究和仿真,我们分析了集成材料对存储器性能和可靠性的影响,并尝试提出适合每种目标应用的优化堆栈。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications
Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信