深入了解随机电报噪声对SRAM稳定性的影响

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480513

Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang

{"title":"深入了解随机电报噪声对SRAM稳定性的影响","authors":"Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang","doi":"10.1109/VLSI-TSA.2016.7480513","DOIUrl":null,"url":null,"abstract":"In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are investigated in detail. Statistical results with impacts of RTN and process variations are also presented, which can be helpful for stability design and guard band prediction for SRAM.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Deep understanding of random telegraph noise (RTN) effects on SRAM stability\",\"authors\":\"Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang\",\"doi\":\"10.1109/VLSI-TSA.2016.7480513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are investigated in detail. Statistical results with impacts of RTN and process variations are also presented, which can be helpful for stability design and guard band prediction for SRAM.\",\"PeriodicalId\":441941,\"journal\":{\"name\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2016.7480513\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文将统计分布finfet中RTN的多声子跃迁模型集成到工业标准BSIM-CMG中，并对SRAM的读取稳定性进行了深入研究。发现RTN引起的SRAM失效概率平台的不同趋势，反映了实际电路运行情况。详细研究了RTN幅值、位线容量、工作频率对Vmin的影响。并给出了考虑RTN和工艺变化影响的统计结果，为SRAM的稳定性设计和保护带预测提供了依据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Deep understanding of random telegraph noise (RTN) effects on SRAM stability

In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are investigated in detail. Statistical results with impacts of RTN and process variations are also presented, which can be helpful for stability design and guard band prediction for SRAM.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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