2020 5th IEEE International Conference on Emerging Electronics (ICEE)最新文献_第7页

Polyaniline Nanofibers as Chemiresistive Transducers: Seeded Synthesis, Characterization and DNA Sensing 聚苯胺纳米纤维作为化学电阻传感器:种子合成、表征和DNA传感

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776939

Suryasnata Tripathy, R. Gangwar, S. Vanjari, S. Singh

{"title":"Polyaniline Nanofibers as Chemiresistive Transducers: Seeded Synthesis, Characterization and DNA Sensing","authors":"Suryasnata Tripathy, R. Gangwar, S. Vanjari, S. Singh","doi":"10.1109/icee50728.2020.9776939","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776939","url":null,"abstract":"In this paper, seeded synthesis of Polyaniline (PANi) nanofibers, their characterization and use as transducers in chemiresistive DNA sensing have been reported. PANi, among many one-dimensional conductive polymers, has shown great potential as a transducer in chemiresistive biosensing in general and DNA sensing in particular, on account of its natural conductivity, ease of doping and surface functionalization. Herein, PANi nanofibers were synthesized using a seeding method, using single walled carbon nanotube (SWCNT) seeds. Surface morphology of the thus synthesized nanofibers were investigated using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The nanofibers were surface modified with 2% glutaraldehyde for facilitating probe-DNA immobilization, and the results of the same were investigated using Fourier transform infrared spectroscopy. Further, towards analyzing the electrical transport properties of the PANi nanofibers, I-V characteristics were recorded in the applied bias range of −10 V - +10 V, using Agilent B1500A parametric analyzer. As inferred, the I-V response was symmetric about the vertical axis, revealing a crossover between near-Ohmic and power-law dominated regions. As a case study, in this work, the PANi nanofibers were used as transducers for chemiresistive detection of Dengue virus specific consensus primers (DENVCP).","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123055410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of Drain Extended MOS Devices for Reliability in High Switching applications 高开关应用中漏极扩展MOS器件可靠性的优化

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777045

Shraddha Pali, Ankur Gupta

引用次数: 0

Design of 3-D Printed Quadrupole Mass Spectrometer 3d打印四极杆质谱仪的设计

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777055

Shruti Pathak, A. M. Chauhan, Jayadeva, Bhaskar Mitra

{"title":"Design of 3-D Printed Quadrupole Mass Spectrometer","authors":"Shruti Pathak, A. M. Chauhan, Jayadeva, Bhaskar Mitra","doi":"10.1109/icee50728.2020.9777055","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777055","url":null,"abstract":"Previous attempts at miniaturizing Quadrupole mass spectrometers (QMS) have focused on micromachined devices. The resolution of a QMS varies with the square of its length (for a fixed frequency). Thus, MEMS scale QMS have limited resolution due to their small lengths. Also, macroscale QMS requires higher vacuum levels as the scattering tends to degrade the resolution. The length scales in 3-D printed devices promise a better balance between resolution and higher-pressure operation than previous miniaturization efforts. This paper reports a design and fabrication of portable QMS using 3-D printing technology. 3-D printing provides a more optimum scale for miniaturizing QMS as the devices can be a few cm's in length with the various components being correctly aligned. The simulation of QMS is performed using COMSOL Multiphysics. Mathieu's first stability region is plotted for the base peaks of chemicals in the range 20-200 amu. The 3-D printed prototype of QMS is illustrated with hollow cathode as an ionizer, quadrupole mass filter as a mass analyzer, and Faraday cup as a detector. N2+ ions are passed through the QMS for preliminary testing of the device. A 2 MHz AC signal is applied to the mass filter. Preliminary testing gave a current of $22 mumathrm{A}$ when the device was tuned to N2+ and $0 mumathrm{A}$ when the mass filter voltage is not applied.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121910267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Interface Charges on InGaN and InGaAs Based Dopingless TFET and its Circuit Analysis 界面电荷对InGaN和InGaAs基无掺杂TFET的影响及其电路分析

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776962

Monika Sharma, R. Narang, M. Saxena, Mridula Gupta

{"title":"Effect of Interface Charges on InGaN and InGaAs Based Dopingless TFET and its Circuit Analysis","authors":"Monika Sharma, R. Narang, M. Saxena, Mridula Gupta","doi":"10.1109/icee50728.2020.9776962","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776962","url":null,"abstract":"In this paper, the doping-less tunnel field-effect transistor with its gate-engineered structures is studied in which the effect of interface charges and its circuit performance are presented. The charge plasma method is used for reinforcing the desired doping by depositing the metal layer of required work-function on it, which makes it free from random doping fluctuations. While, the deposition of the oxide layer on the semiconducting bar leads to the formation of dangling bonds on the surface, to include the effect of breakage of bonds on the interface both positive and negative interface charges are considered. The comparison of different materials with different interface charges shows the improvement in the characteristics for InGaAs DL TFET. Further, the gate engineered structures are compared for InGaN and InGaAs based DL TFET, and among these InGaAs based DL TFET shows higher ON-current characteristics for positive interface charges. The CV and transient behavior of all the structures are also studied. Among all the structures studied for DC and RF performance estimation shows InGaAs HD-HG DL TFET as the most prominent structure for digital circuits because of its lower miller capacitance. Hence, it can be used for faster switching circuits and sensing applications.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Optimized MEMS Circular Membrane Resonators for Mechanical Energy Harvesting and Sensing for IoT Application 优化的MEMS圆形膜谐振器，用于物联网应用的机械能收集和传感

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777018

F. Beigh, J. Sheikh, N. Beigh

{"title":"Optimized MEMS Circular Membrane Resonators for Mechanical Energy Harvesting and Sensing for IoT Application","authors":"F. Beigh, J. Sheikh, N. Beigh","doi":"10.1109/icee50728.2020.9777018","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777018","url":null,"abstract":"The Internet of Things (IoT) definition tends to be the common denominator of all distributed sensing systems, providing intelligent entities with connectivity and interoperability within a pervasive network. Normally, IoT nodes are powered with the conventional batteries, but since the lifetime of battery is constrained and often their replacement is impracticable. Thus, there is strong need of self-powered devices or alternative sources of energy to continuously power the IoT devices. Proposed solution to this limitation is use of vibration based Micro electromechanical systems (MEMS) piezoelectric energy harvester that could provide a free, green, and virtually unlimited secondary powering source over traditional energy sources (batteries). Due recent development in field of MEMS technology, vibration energy harvesting is gaining attention and with an abundant vibration energy available generate power using MEMS devices within microwatts to few mW ranges, it is going to become the technology of future. In this paper we are proposing variants of circular membrane type of MEMS structures which can be used for piezoelectric vibrational energy harvesting and sensing. The aim of proposed structures is efficient energy harvesting as well as condition monitoring of remote or standalone vibrating sources such as water pumps and rotors that produce a narrow frequency range vibration depending upon the physical condition of the source.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122639166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Three-axis Piezoresistive MEMS Accelerometer with Extended Twin Mass Structure 扩展双质量结构的三轴压阻MEMS加速度计

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777051

Jesma R. Raeann, Shalini Singh, V. Seena

引用次数: 0

Fabrication of CMOS Compatible 2-terminal NEMS for Low Power Applications 低功耗CMOS兼容二端NEMS的制造

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776893

S. Saha, M. Baghini, Mayank Goel, V. Rao

引用次数: 0

Contact Study of MEMS High g Impact Sensor MEMS高g冲击传感器的接触研究

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776769

Vikram Maharshi, A. Agarwal, Bhaskar Mitra

引用次数: 1

Impact of Hot Carrier Injection on Total Ionizing Dose Effect of 10-nm N-channel Bulk FinFETs 热载流子注入对10nm n沟道体finfet总电离剂量效应的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776895

Pritam Yogi, M. Kumar, K. Aditya, Charu Gupta, A. Dixit

{"title":"Impact of Hot Carrier Injection on Total Ionizing Dose Effect of 10-nm N-channel Bulk FinFETs","authors":"Pritam Yogi, M. Kumar, K. Aditya, Charu Gupta, A. Dixit","doi":"10.1109/icee50728.2020.9776895","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776895","url":null,"abstract":"In this paper, the effect of hot-carrier injection (HCI) on Total Ionization Dose (TID) for the 10-nm technology node N-channel bulk FinFETs is reported. The Gamma radiation (60CO chamber) has been used as the source of Total Ionization Dose (TID), while DC bias stress ($mathrm{V}_{text{gs}}=mathrm{V}_{text{ds}}=1.2mathrm{V}$) is used for HCI degradation. We performed experiments on n-channel bulk FinFETs with two gate lengths, i.e. $text{Lg}=30$ and 70nm. A set of these devices was subjected to hot-carrier stress, while another set kept virgin. All of the devices were then irradiated in the gamma-ray chamber for a cumulative dose of 43 Mrad (Si). The devices were analyzed afresh as well as after the hot-carrier stress and irradiation for changes in threshold voltage (Vth), sub-threshold slope (SS), on-current (Ion), off-current (Ioff) for linear and saturation regions of operation. Our results are useful as they predict, for the first time ever, an interesting scenario for space applications as to how the performance of the device degrades in space, not just due to exposure to gamma radiation but also due to aging.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127683902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication of Freestanding Metallic MEMS Actuator for Minimal Stress-Induced Air-gap Variations 用于最小应力诱导气隙变化的独立式金属MEMS驱动器的制造

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776983

Sushil Kumar, D. S. Arya, Pushpapraj Singh

引用次数: 0