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2020 5th IEEE International Conference on Emerging Electronics (ICEE)最新文献

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TCAD Based Reliability Assessment of Recess Gate AlGaN/GaN HEMT with Negative Gate Bias Induced Stress 基于TCAD的负栅偏置应力凹口AlGaN/GaN HEMT可靠性评估
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777048
V. Kumari, Amrutamayee Nayak, K. Sehra, Mridula Gupta, M. Saxena
{"title":"TCAD Based Reliability Assessment of Recess Gate AlGaN/GaN HEMT with Negative Gate Bias Induced Stress","authors":"V. Kumari, Amrutamayee Nayak, K. Sehra, Mridula Gupta, M. Saxena","doi":"10.1109/icee50728.2020.9777048","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777048","url":null,"abstract":"In the present work, the effect of negative gate bias induced stress on the performance of conventional and Recess Gate AlGaN/GaN HEMT has been presented using ATLAS TCAD simulation. Different device parameters have been used to investigate the influence of device parameters on the threshold voltage of the devices after applying negative gate bias induced stress. Results show that the recess gate architecture reduces the effect of negative gate bias stress due to the lower 2DEG density. Also, it is observed that, scaling down the gate length results in a significant degradation in the device pinch off voltage on subjecting it to a negative stress which is expected to be due to the presence of interface traps present in the device. The increase in gate leakage current in case of Recess gate HEMT has been lowered by using nitride layer at the drain end which also shows approximately the same device behavior after applying negative gate bias stress.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125102997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Transport Layer Thickness for Perovskite Solar Cells: An Optical Analysis 钙钛矿太阳能电池输运层厚度的优化:光学分析
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777084
V. Sharma, Shubhangi Saini, R. Padmanabhan
{"title":"Optimization of Transport Layer Thickness for Perovskite Solar Cells: An Optical Analysis","authors":"V. Sharma, Shubhangi Saini, R. Padmanabhan","doi":"10.1109/icee50728.2020.9777084","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777084","url":null,"abstract":"Perovskite-based solar cells are one of the most rapidly emerging photovoltaic devices in terms of their ability to convert sunlight into electrical energy. Although extensively researched upon, their efficiency is still less than the thermo-dynamic limit due to various electrical losses in the device and optical losses in the stack layers that make a perovskite solar cell (PSC). This work focuses on optimizing the thickness of the transport layers (electron and hole transport layers) in the stack for planar PSCs, by accounting for different optical losses in each layer analytically.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126045848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Augmentation in Frequency Modulation properties of PDLCs by addition of Ferroelectric Nanoparticles 铁电纳米粒子对pdlc调频性能的增强
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776981
A. Kumari, A. Sinha
{"title":"Augmentation in Frequency Modulation properties of PDLCs by addition of Ferroelectric Nanoparticles","authors":"A. Kumari, A. Sinha","doi":"10.1109/icee50728.2020.9776981","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776981","url":null,"abstract":"Polymer dispersed liquid crystals (PDLCs) are widely investigated by researchers due to their potential applications like displays and energy harvesting devices. We have investigated the effect of BaTiO3 nanoparticle concentration on the frequency modulation properties of PDLCs. Initially, as the nanoparticle concentration increases, the required frequency for transmission modulation decreases. On further increasing nanoparticle concentration, the needed modulation frequency increases. For LC-based devices, the frequency modulation properties are usually explained by the variation of dielectric constant. The required frequency for modulation of properties shows a decrement in value from nearly 1 MHz (for pure sample) to 500 kHz (for 0.4 wt% BaTiO3 doped). Consequently, the BaTiO3 doped PDLC films are more suitable in optical modulators and PDLC hybrid electroluminescence for flexible electronic devices.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115026413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation studies for mode profile analysis in single mode high power asymmetric large optical cavity laser structures 单模高功率非对称大光腔激光器结构模廓分析的仿真研究
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777081
Meenakashi Patwal, Deepti Jain, Alok Jain, Ajeet Kumar
{"title":"Simulation studies for mode profile analysis in single mode high power asymmetric large optical cavity laser structures","authors":"Meenakashi Patwal, Deepti Jain, Alok Jain, Ajeet Kumar","doi":"10.1109/icee50728.2020.9777081","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777081","url":null,"abstract":"The simulation study for optimization of ridge waveguide parameters is carried out for designing of high power laterally-coupled Distributed Feedback (DFB) laser diode. The confinement factor, effective index and single mode analysis of GaAs/InGaAs single quantum well (SQW) high power laser diodes for emission at 976 nm have been investigated. Optimization of ridge width, ridge height and residual thickness of the underlying cladding layer, are required to achieve single and well confined mode. The confinement factor and effective index of these laser diodes with different residual thickness ranging from around 950 nm (shallow ridge waveguide) to 50 nm (deep etch ridge waveguide) are studied for different ridge widths. It is found from our simulation studies that the residual thickness of 447 nm can provide better flexibility in terms of coupling of the grating with the mode field. Thus, it serves as optimum dimension of ridge waveguide so that by incorporating grating in this structure we can achieve high power DFB laser diode.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114433035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring current conduction mechanisms in 6 MeV $text{Si}^{3+}$ ion irradiated Au/SiO2/beta-Ga2O3 metal-oxide-semiconductor devices 研究6 MeV $text{Si}^{3+}$离子辐照Au/SiO2/beta-Ga2O3金属氧化物半导体器件的电流传导机制
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777064
N. Manikanthababu, B. R. Tak, Hardhyan Sheoran, K. Prajna, B. Panigrahi, R. Singh
{"title":"Exploring current conduction mechanisms in 6 MeV $text{Si}^{3+}$ ion irradiated Au/SiO2/beta-Ga2O3 metal-oxide-semiconductor devices","authors":"N. Manikanthababu, B. R. Tak, Hardhyan Sheoran, K. Prajna, B. Panigrahi, R. Singh","doi":"10.1109/icee50728.2020.9777064","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777064","url":null,"abstract":"Wide bandgap and cost-effective features place Ga<inf>2</inf>O<inf>3</inf> as a viable candidate for various power electronic devices. Au/SiO<inf>2</inf>/beta-Ga<inf>2</inf>O<inf>3</inf> metal-oxide-semiconductor devices are tested for radiation response with 6 MeV <tex>$text{Si}^{3+}$</tex> ions. The leakage current density is found to increase from <tex>$8.6times 10^{-5} mathrm{A}/text{cm}^{2}$</tex> (for pristine device) to <tex>$9.8times 10^{-4}mathrm{A}/text{cm}^{2}$</tex> (at <tex>$5times 10^{16} text{ions}/text{cm}^{2}$</tex> fluence) at −10 V. Various current conduction mechanisms are explored under gate and substrate injection in these devices. Under gate injection, the direct tunneling dominates at low voltage regime of 0 to −3 V at all fluences due to low SiO<inf>2</inf> thickness <tex>$(sim 10 text{nm})$</tex>. The Poole-Frenkel emission is quite dominant at <tex>$5times 10^{16}text{ions}/text{cm}^{2}$</tex> attributed to the increased number of trap states in SiO<inf>2</inf>, and the estimated shallow trap depth is 0.4 (pristine) to 0.2 eV (highest fluence) from the conduction band edge. The barrier height (BH) of SiO<inf>2</inf>/beta-Ga<inf>2</inf>O<inf>3</inf> interface estimated from the Fowler-Nordheim tunneling under substrate injection is 2.52 eV for the pristine device and the BH is found to decrease to 1.83 eV at <tex>$1times 10^{16} text{ions}/text{cm}^{2}$</tex> fluence.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130293721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Performance evaluation of DG-MOSFETs and DG-TFETs with Ferroelectric insulation layer 具有铁电绝缘层的dg - mosfet和dg - tfet的性能评价
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777088
Reshma S. Kumar, R. Narang, Mridula Gupta, M. Saxena
{"title":"Performance evaluation of DG-MOSFETs and DG-TFETs with Ferroelectric insulation layer","authors":"Reshma S. Kumar, R. Narang, Mridula Gupta, M. Saxena","doi":"10.1109/icee50728.2020.9777088","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777088","url":null,"abstract":"In this work, we have presented the effect of Ferroelectric (FE) gate dielectric in Double Gate MOSFET and TFET and their contemporary Dopingless and Junctionless variants. A comprehensive and comparative analysis has been carried out to study the SS, $mathrm{I}_{text{ON}},mathrm{I}_{text{OFF}},mathrm{V}_{text{th}}$ and $mathrm{I}_{text{ON}}/mathrm{I}_{text{OFF}}$ ratio by choosing uniform values of gate workfunctions and suitable values of source/drain workfunctions and the FE parameters. The steepest SS of 20.28 mV/decade is observed in case of DGFeTFET with a boost of about 3 orders of magnitude in $mathrm{I}_{text{ON}}$ while the largest improvement in SS due to introduction of FE layer is shown by JLDGTFET. Further, the impact of variation of device geometrical parameter $(mathrm{t}_{text{fe}})$ and the ferroelectric parameters ($mathrm{E}_{mathrm{c}}$ and $mathrm{P}_{mathrm{s}})$ on drain current has also been studied.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114534341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Nanocone Anti reflective Coatings on Organic Light Emitting Diode to enhance light extraction efficiency 纳米锥防反射涂层对有机发光二极管光提取效率的影响
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777046
Chaya Bm, M. M, Nagesh M
{"title":"Effect of Nanocone Anti reflective Coatings on Organic Light Emitting Diode to enhance light extraction efficiency","authors":"Chaya Bm, M. M, Nagesh M","doi":"10.1109/icee50728.2020.9777046","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777046","url":null,"abstract":"The effect of Nano cone anti reflective coatings (ARC) on Organic light emitting diode (OLED) is analyzed and simulated. The modeling of Nano cone anti reflective coating (ARC) is done using finite difference time domain (FDTD) method. The Nano cone ARC are incorporated to reduce the reflections at the substrate air interface. The incorporation of ARC reduces substrate air losses and increases transmission of an OLED. The Light Extraction Efficiency (LEE) has been improved by introducing Nano cone ARC on the substrate of an OLED that reduces substrate losses. In this work, Comparative study is carried with OLED with Nano cone ARC and conventional OLED device. The various optical characteristics are studied at an operating wavelength of 540nm. It is observed that Nano cone ARC based OLED has enhanced light output compared to conventional OLED.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114560391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterization of Ag/PCDTBT/ZnO QD/ITO p-n junction based Photodetector 基于Ag/ pcdbt /ZnO QD/ITO p-n结光电探测器的制备与表征
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776675
Abhinav Pratap Singh, R. K. Upadhyay, Deepchandra Upadhyay, S. Jit
{"title":"Fabrication and characterization of Ag/PCDTBT/ZnO QD/ITO p-n junction based Photodetector","authors":"Abhinav Pratap Singh, R. K. Upadhyay, Deepchandra Upadhyay, S. Jit","doi":"10.1109/icee50728.2020.9776675","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776675","url":null,"abstract":"In this proposed paper, we exhibit a ZnO QDs based UV photodetector. By the colloidal synthesis route method, ZnO quantum dots were synthesized. Polymer PCDTBT behaves as P-type material for making a p-n junction diode. Finally, the study of optoelectronics characteristics of conventional device Ag/PCDTBT/ZnO Quantum Dot/ITO UV-photodetector at a 375 nm wavelength under the dark and light conditions and power density is $43 mumathrm{W}/text{cm}^{2}$ of monochromator light source. It is found PCDTBT (p-type) and ZnO Quantum Dot (n-type) based conventional p-n junction photodetector has good electrical and optical performance in UV region.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131717892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly Efficient Low Threshold Parametrically Forced MEMS Vibrational Energy Harvesters 高效低阈值参数化强迫MEMS振动能量采集器
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776976
N. Beigh, D. Mallick
{"title":"Highly Efficient Low Threshold Parametrically Forced MEMS Vibrational Energy Harvesters","authors":"N. Beigh, D. Mallick","doi":"10.1109/icee50728.2020.9776976","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776976","url":null,"abstract":"Auto-Parametric resonance in MEMS offers a relative performance improvement over other nonlinear strategies. The parametric amplification effect is under-utilized in MEMS because of initial damping dependent threshold limitation for low amplitude excitation available in real applications. In this paper, a low threshold auto-parametrically driven MEMS vibrational harvester is designed and simulated for low frequency and low acceleration wideband excitations. A 1:2 auto parametric oscillator design with internal mode coupling is presented with initial spring geometric modification to allow for reduced parametric threshold of 0.6 m/s2 and 12-fold increase in oscillation amplitude over the directly excited counterpart.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127842502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparative study of the diffused emitter formed using screen-printed phosphorus doping paste and POCl3 source for silicon solar cells 硅太阳能电池用丝网印刷磷掺杂浆料与POCl3源形成扩散发射极的比较研究
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776734
Saima Cherukat, P. Basu, A. Kottantharayil
{"title":"Comparative study of the diffused emitter formed using screen-printed phosphorus doping paste and POCl3 source for silicon solar cells","authors":"Saima Cherukat, P. Basu, A. Kottantharayil","doi":"10.1109/icee50728.2020.9776734","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776734","url":null,"abstract":"In this work, we have studied the screen-printed doping paste emitter diffusion and benchmarked it against the de-facto standard phosphorus oxychloride based tube diffusion. Comparable sheet resistance uniformity and solar cell electrical parameters have been achieved in both types of diffusions. In addition, the advantage of spatial selectivity and non-requirement of the edge isolation step in the paste-diffusion makes the screen-printable paste-diffusion approach promising for industrial silicon wafer solar cells.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116235906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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