基于Ag/ pcdbt /ZnO QD/ITO p-n结光电探测器的制备与表征

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI:10.1109/icee50728.2020.9776675

Abhinav Pratap Singh, R. K. Upadhyay, Deepchandra Upadhyay, S. Jit

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引用次数: 0

摘要

在本文中，我们展示了一个基于ZnO量子点的紫外光电探测器。采用胶体合成途径合成ZnO量子点。聚合物pcdbt作为p型材料用于制作p-n结二极管。最后，研究了传统器件Ag/ pcdbt /ZnO量子点/ITO紫外光电探测器在375 nm波长下，在暗、亮两种条件下，功率密度为$43\ \mu\ mathm {W}/\text{cm}^{2}$的单色光源下的光电子学特性。发现基于pcdbt (p型)和ZnO量子点(n型)的传统p-n结光电探测器在紫外区具有良好的电学和光学性能。

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Fabrication and characterization of Ag/PCDTBT/ZnO QD/ITO p-n junction based Photodetector

In this proposed paper, we exhibit a ZnO QDs based UV photodetector. By the colloidal synthesis route method, ZnO quantum dots were synthesized. Polymer PCDTBT behaves as P-type material for making a p-n junction diode. Finally, the study of optoelectronics characteristics of conventional device Ag/PCDTBT/ZnO Quantum Dot/ITO UV-photodetector at a 375 nm wavelength under the dark and light conditions and power density is $43\ \mu\mathrm{W}/\text{cm}^{2}$ of monochromator light source. It is found PCDTBT (p-type) and ZnO Quantum Dot (n-type) based conventional p-n junction photodetector has good electrical and optical performance in UV region.

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2020 5th IEEE International Conference on Emerging Electronics (ICEE)

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