2020 5th IEEE International Conference on Emerging Electronics (ICEE)最新文献_第2页

Influence of Two-dimensional Bending on Flexible Electronic Sensors for Bendable and Wearable Applications 二维弯曲对可弯曲和可穿戴柔性电子传感器的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776975

Kamalesh Tripathy, M. Bhattacharjee

{"title":"Influence of Two-dimensional Bending on Flexible Electronic Sensors for Bendable and Wearable Applications","authors":"Kamalesh Tripathy, M. Bhattacharjee","doi":"10.1109/icee50728.2020.9776975","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776975","url":null,"abstract":"The effect of bending is one of the most important parameters to look up to, for any flexible and wearable device design. Often the performance of any flexible sensor depends on the extent and type of bending. In this direction, herein, we discuss a computational study based on a finite element method of two-dimensional bending of a flexible substrate to understand the stress development on the substrate. In this study, we have considered a 2mm thick sheet of polyether ether ketone (PEEK) polymer having a dimension of ($100times 75times 2$) mm as substrate material. Due to the outstanding mechanical, electrical and thermal properties of PEEK polymer, it is a very good candidate for the flexible electronic substrate. The mentioned substrate has been subjected to a tensile-compressive cyclic deformation of 20 mm from its axis. It was observed that the maximum surface stress of magnitude $9.07times 10^{7} mathrm{N}/mathrm{m}^{2}$ is developed at the center of the substrate. However, the maximum stress developed at the edge is higher than that of the surface. Further, the fatigue analysis of the substrate shows that the substrate is stable for 9000 cycles of dynamic tensile or compressive bending. The computational analysis of bending in this case will be extremely helpful for the design and fabrication of flexible electronic sensors for various wearable applications.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128725465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design and Mathematical Modelling of Inter Spike Interval of Temporal Neuromorphic Encoder for Image Recognition 用于图像识别的时间神经形态编码器的尖峰间隔设计与数学建模

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.48550/arXiv.2205.09519

VS Aadhitiya, Jani Babu Shaik, S. Singhal, Siona Menezes Picardo, Nilesh Goel

引用次数: 3

Plasma Assisted Molecular Beam Epitaxy Grown GaN Nanowires On Si (211) Substrates for UV Sensing Applications 等离子体辅助分子束外延生长在Si(211)衬底上的GaN纳米线用于紫外传感应用

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776961

Mansi Agrawal, Anubha Jain, B. Mehta, R. Muralidharan

{"title":"Plasma Assisted Molecular Beam Epitaxy Grown GaN Nanowires On Si (211) Substrates for UV Sensing Applications","authors":"Mansi Agrawal, Anubha Jain, B. Mehta, R. Muralidharan","doi":"10.1109/icee50728.2020.9776961","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776961","url":null,"abstract":"III-Nitrides have attracted significant research interest in the recent years owing to their wide range of applications. In this study catalyst free plasma assisted molecular beam epitaxy growth of GaN nanowires on Si (211) substrates for UV sensing applications is reported. The GaN nanowires were characterized using field emission scanning electron microscopy and photoluminescence spectroscopy. The field emission scanning electron microscopy results indicated that the nanowires are dense and preferentially oriented. The peak observed at around 3.42 eV in the photoluminescence spectra corresponding to GaN band edge emission confirms that the nanowires are of high optical quality. For UV sensor measurements two Indium contacts were soldered on the surface of the nanowires and resistance between the ohmic contacts was measured as a function of time. The sensor response was measured as the ratio of change in resistance upon exposure to UV to the resistance in air. GaN nanowires showed a response of 2.2% upon exposure to UV with a fast response time. Through this work we show that GaN nanowires on Si (211) substrates are suitable candidates for UV sensing applications.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123731292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoantenna as low-cost optical polarization sensor for remote sensing 纳米天线作为低成本光学偏振遥感传感器

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776696

Kritika Bhattacharya, Madhusudan Singh

{"title":"Nanoantenna as low-cost optical polarization sensor for remote sensing","authors":"Kritika Bhattacharya, Madhusudan Singh","doi":"10.1109/icee50728.2020.9776696","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776696","url":null,"abstract":"Remote sensing for object identification depends on the intensity of infrared light, ranging from near-infrared ($0.8mu mathrm{m}$) to mid-wave infrared ($3mu mathrm{m}$), reflected or emitted by the object, providing information on one parameter. However, the surface orientation of any object has two degrees of freedom, which can be found by using polarized light. Hybrid sensors, consisting of external polarizers, have expensive manufacturing process. In this work, a bowtie nanoantenna with a gap size of 50nm, designed using an FDTD solver is illuminated with a light source of amplitude 1V/m and varying polarization to the nanoantenna axis. The electric field (EF) enhancement in the gap is 100 times larger in parallel polarization as compared to perpendicular polarization of incident light. The calculated absorption efficiency and polarization extinction ratio (PER) is found to be 80% and 21, respectively, in parallel polarization. This dependence paves the way for the application of nanoantenna as a polarization sensor. The array of the nanoantenna can be fabricated using low-cost printing techniques, thus providing inexpensive detection as compared to hybrid sensors.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130378273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of the polarization state on the performance of PVDF-ZnO based triboelectric nanogenerator 极化状态对PVDF-ZnO基摩擦电纳米发电机性能的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776650

Huidrom Hemojit Singh, N. Khare

引用次数: 0

Analytical Modelling of Y2O3-based Memristive System for Artificial Synapses 基于y2o3的人工突触记忆系统的解析建模

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777072

Sanjay Kumar, Mangal Das, K. Jyoti, Amit Shukla, Abhishek Kataria, S. Mukherjee

引用次数: 0

Pulsed-IV and drain current transient study of AlGaN/GaN HEMTs AlGaN/GaN hemt的脉冲电流和漏极电流瞬态研究

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776897

Jayjit Mukherjee, Jagori Raychaudhuri, Sudhir Kumar, A. Malik, Sunil Sharma, D. S. Rawal, R. Dhaka

引用次数: 0

Modeling of Perovskite-Silicon Tandem Solar Cells: A TCAD-based Approach 钙钛矿-硅串联太阳能电池的建模:基于tcad的方法

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777015

Kumudini Ganesh, R. Padmanabhan

引用次数: 1

Photocurrent Loss Analysis of Series Connected Tandem Solar Cells Based on Hybrid Tin Perovskites, Kesterites, and Semiconducting Polymers 基于杂化锡钙钛矿、凯斯特矿和半导体聚合物的串联串联太阳能电池的光电流损耗分析

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776944

Atanu Purkayastha, A. T. Mallajosyula

{"title":"Photocurrent Loss Analysis of Series Connected Tandem Solar Cells Based on Hybrid Tin Perovskites, Kesterites, and Semiconducting Polymers","authors":"Atanu Purkayastha, A. T. Mallajosyula","doi":"10.1109/icee50728.2020.9776944","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776944","url":null,"abstract":"Series connected tandem solar cells (TSCs) based on low-temperature solution-processable semiconductors such as organic-inorganic hybrid perovskites (OIHPs), kesterites, and polymers have been analyzed optically using the transfer matrix method (TMM). Various active-layer combinations for top and bottom sub-cells have been compared with respect to the maximum possible photocurrent density, parasitic absorption loss, reflection loss, and spectral overlap loss. The choice of materials was such that either their band gaps are close to ideal values or highest efficiency devices were reported using them. In the initial step for device optimization, the thickness of nonactive layer has been optimized to maximize the absorption in the low bandgap sub-cell. Subsequently, thicknesses of both the active layers were simultaneously varied to maximize and match the photocurrent densities ($J_{PHvert Max}$) in two sub-cells. Within the several combinations optimized, we found that polymer - tin OIHP and all-polymer TSCs were the most promising ones, with $J_{PHvert Max}$ values of 15.566 and 15.232 mA.cm−2 respectively. While the former had the lowest reflection loss (1.831 mA.cm−2) and spectral overlap loss (1.273 mA.cm−2) respectively, the later had the lowest parasitic absorption loss of 0.487 mA.cm−2. On the other hand, the all-OIHP TSCs analyzed here, were the least promising ones with reflection losses that could be as high as 18.18 mA.cm−2. These results will be useful for the development of efficient and environment friendly tandem solar cells.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131139141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Self-Heating on Linearity of Novel Junctionless Accumulation Mode Negative Capacitance FinFET 自热对新型无结积累模式负电容FinFET线性度的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776730

M. Kumar, A. Dixit

引用次数: 0