2020 5th IEEE International Conference on Emerging Electronics (ICEE)最新文献_第3页

a-InGaZnO Thin-film Transistor as an Oxygen Gas Sensor with In-Situ Electrical Characterization a-InGaZnO薄膜晶体管作为氧气传感器的原位电特性研究

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777095

Tejas R. Naik, M. Zalte, M. Baghini

{"title":"a-InGaZnO Thin-film Transistor as an Oxygen Gas Sensor with In-Situ Electrical Characterization","authors":"Tejas R. Naik, M. Zalte, M. Baghini","doi":"10.1109/icee50728.2020.9777095","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777095","url":null,"abstract":"Wide band gap metal oxide semiconductors have been explored for a plethora of applications in recent years [1]. Thin film transistors (TFTs) especially have found extensive utility in environmental sensors and flexible electronics for modern devices. Amorphous Indium Gallium Zinc Oxide (a-IGZO) is a wide band gap metal oxide semiconductor with ideal properties for next generation sensors. It's transparent thin film coupled with wide band gap and high field effect mobility provides an ideal platform for such sensors. It's stability and high mobility gives it a major advantage over the organic TFTs that have been traditionally used for such sensing applications. Oxygen sensors has seen large demand recently owing to the modernization of agricultural methods and in biomedical applications where it is of critical importance. In the present work an a-IGZO TFT is fabricated and demonstrated for oxygen sensing with in-situ electrical characterization. a-IGZO thin films are prepared by simple, low-cost solution processing. The a-IGZO TFT is used to sense oxygen (O2) gas and ppm level detection is achieved. The effect of change in electrical characteristics of IGZO TFTs with oxygen adsorption is utilized to achieve high sensitivity [2]. The saturation drain current $(mathrm{I}_{text{Dsat}})$ increment of 20 uA/ppm and Vth shift of 100mV/ppm in presence of oxygen is observed.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interaction of Glucose with CuO: Glucose sensing platform 葡萄糖与CuO的相互作用:葡萄糖传感平台

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776753

H. Devi, Nidhi Dua, Akshita Mishra, Md Samim Reza, P. Akhtar, Madhusudan Singh

{"title":"Interaction of Glucose with CuO: Glucose sensing platform","authors":"H. Devi, Nidhi Dua, Akshita Mishra, Md Samim Reza, P. Akhtar, Madhusudan Singh","doi":"10.1109/icee50728.2020.9776753","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776753","url":null,"abstract":"Rising incidence of diabetes has led to a rapidly increasing disease burden in emerging economies. Detection of blood glucose using non-enzymatic sensors is desirable to achieve a low detection limit in diabetic patients, who typically have blood glucose levels in a reference range of 1.1 - 20.08 mM. Low cost, biocompatible and stable copper oxide films have been developed in this work. Synthesis of the copper oxide nanomaterial was carried out in a deep eutectic solvent (DES) of gallic acid: choline chloride: ethylene glycol, which acts as a stabilizing agent, ensuring stability (∼ several months for CuO). Synthesized particles were characterized using X-Ray Diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction, scanning electron microscope, energy dispersive X-ray analysis and photoluminescence (PL). TEM data revealed nanoparticle diameters in the range of 56–60 nm. Under 325 nm excitation, films based on these nanoparticles exhibit a strong PL emission at 341nm, a shoulder peak at 410 nm, and deep level defect at 561 nm in addition to 664 nm emissions. As a preliminary study prior to incorporation in a sensing device consisting of an integrated PL (UV) source-driven colorimetric display, glucose spiked solutions (∼ 0.001 M) were added to the CuO film and studied under PL excitation. The emission spectrum exhibited a time-dependent, broad strongly enhanced fluorescent feature in 414–540 nm range on interaction with glucose. This establishes the initial feasibility of a real-time, regenerative, low-cost glucose sensing platform.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114691183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing the Quality Factor for the Metal-Assisted Guided Mode Resonance Based Two-Dimensional Structures Through Fill-Factor Modulation 利用填充因子调制优化金属辅助导模共振二维结构的品质因子

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776759

Vipul Pandey, S. Pal

引用次数: 0

An Electrothermally controlled quantum tunneling based microcantilever sensor - A simulation study 电热控制量子隧穿微悬臂传感器的仿真研究

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776866

Shubham Saxena, Samaresh Das

{"title":"An Electrothermally controlled quantum tunneling based microcantilever sensor - A simulation study","authors":"Shubham Saxena, Samaresh Das","doi":"10.1109/icee50728.2020.9776866","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776866","url":null,"abstract":"A novel electrostatic & thermally controlled, bimetal Micro Electromechanical System (MEMS) based platform is simulated which works on the principle of quantum tunnelling. A specific frequency laser strikes the analyte and gets absorbed. The absorbed energy gets released as heat and the accompanying temperature change causes the bimetal microcantilever to bend due to the mismatch in the coefficient of thermal expansion (CTE). This deflection causes a change in quantum tunnelling current between the microcantilever tip and an electrode. The exponential dependence of tunnelling current on the deflection results in milli-Kelvin range temperature variation sensing capability. Microcantilever lengths between $10mumathrm{m}$ to $50mumathrm{m}$, widths between $1mumathrm{m}$ to $5mumathrm{m}$ and thicknesses between 100nm to 300nm are simulated for calculating the average thermal sensitivity over a 10mK range. Also, bimetal combinations of Aluminium-Silver, Aluminium-Chromium and Silver-Nickel are used to calculate the variations in the tunnelling current with change in metal combination for different concentrations of Ammonia. Simulations show that the above scheme can be used for ultra-sensitive thermal sensing, soil spectroscopic and explosive detection applications.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123299852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ga-In Alloy based Nanoparticles for Deep UV Plasmonics 基于Ga-In合金的深紫外等离子体纳米粒子

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776756

Jagriti Ahuja, A. Bag

引用次数: 0

Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection 氨检测用二硒化铂薄膜场效应晶体管

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777024

Sumit Sharma, Akshay Moudgil, P. Mishra, Samaresh Das

引用次数: 1

Thermoelectric Transport in Noble Metals Monolayers: A First Principles Study 贵金属单层热电输运:第一性原理研究

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777009

Sushil Kumar, K. Kumar, R. K. Moudgil

{"title":"Thermoelectric Transport in Noble Metals Monolayers: A First Principles Study","authors":"Sushil Kumar, K. Kumar, R. K. Moudgil","doi":"10.1109/icee50728.2020.9777009","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777009","url":null,"abstract":"In this study, we have carried out a first principles calculation of thermoelectric transport in freestanding monolayers of noble metals (viz. Au, Ag, Cu, and Pt). The electrical conductance, the thermal conductance (electronic as well as phononic), and the thermopower are calculated to assess the thermoelectric efficiency. While the electronic transport is determined by using the non-equilibrium Greens function (NEGF) approach based on the density functional theory (DFT) as implemented in the TranSIESTA module of SIESTA package, the phononic contribution is obtained using the Phonons module of ASE python package with ATOMISTICA as a calculator, together with the NEGF utility code, Phtrans. Our study predicts that the electronic thermal conductance rises in a non-linear fashion with temperature, while its phonon counterpart saturates to a characteristic constant after exhibiting an initial steep rise. Interestingly, the heat transport is found to be more in the zigzag direction. At room temperature, the relative phononic contribution to thermal conductance is seen to be the least for the Pt monolayer. The considered monolayers show only a small thermopower in the zero-biasing condition. However, it can be tuned by applying an external bias to achieve a value as large as about 1.05 mV/K in the Pt monolayer. Likewise, the Pt monolayer exhibits a maximum (about unity) thermoelectric figure of merit. As an interesting result, the predicted figure of merit is of the same order as for the noble metal atomic chains.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125070731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-state Leakage Current Modeling in AlGaN/GaN HEMT AlGaN/GaN HEMT的稳态泄漏电流建模

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776729

Shradha Gupta, J. Kaushik, Ankur Gupta

引用次数: 0

Designing a Hexagonal Array of Gradient Pitch Helix Structure using Multiple Beam Interference for Broadband Light Trapping 基于多光束干涉的六角形梯度螺距螺旋结构阵列宽带光捕获设计

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776711

Krishnendu Samanta, Shereena Joseph, S. Pandey, S. Sarkar, J. Joseph

引用次数: 0

Effect of In-homogeneities on Schottky barrier height & Richardson constant of Ni-AlGaN/GaN Schottky contact 非均匀性对Ni-AlGaN/GaN肖特基接触肖特基势垒高度和Richardson常数的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777042

Ajay Kumar Visvkarma, Chanchal, C. Sharma, N. Saini, M. Saxena, R. Laishram, D. S. Rawal

{"title":"Effect of In-homogeneities on Schottky barrier height & Richardson constant of Ni-AlGaN/GaN Schottky contact","authors":"Ajay Kumar Visvkarma, Chanchal, C. Sharma, N. Saini, M. Saxena, R. Laishram, D. S. Rawal","doi":"10.1109/icee50728.2020.9777042","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777042","url":null,"abstract":"In this article, we present the variation in schottky barrier height (SBH) and ideality factor of Ni schottky contact (area $1.0times 10^{-4} text{cm}^{2}$) on AlGaN/GaN epitaxial layer with temperature (77 K to 350 K). The spread of SBH and ideality factor is in the range of 0.32 eV-1.05 eV and 7.16-1.48 respectively. The dependence of SBH and ideality factor points to the presence of in-homogeneities at Ni/AlGaN interface. Presence of these in-homogeneities at the metal/semiconductor interface leads to an inaccurate value of Richardson constant extracted using Richardson's plot. A Gaussian distribution of in-homogeneities at the interface is considered and included further in the standard schottky diode equation to obtain a modified Richardson's plot in order to extract a more precise value of Richardson constant for AlGaN epitaxial layer. The Schottky barrier height and Richardson constant obtained considering Gaussian distribution is 1.01 eV and 33.4 Acm−2K−2 respectively. Moreover the variation of diode series resistance with temperature is also determined using Cheung's method which is found to be increasing linearly with temperature.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128680904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0