On-state Leakage Current Modeling in AlGaN/GaN HEMT

In this paper, we modeled the on-state leakage current using a Two-Dimensional Analytical model. The temperature dependence of on-state gate leakage current has been explained as a combination of trap assisted tunneling current and phonon-assisted tunneling current. In addition, this model includes the effect of phonon energy on leakage current. Generally, the electron-phonon interaction changes with the temperature can lead to altering the effective phonon energy. This electron-phonon coupling is attributed to the considerable decrease in leakage current as temperature increases. Moreover, the sudden increase in leakage current at specific drain bias has been described by the rise in number of phonons.