Sumit Sharma, Akshay Moudgil, P. Mishra, Samaresh Das
{"title":"氨检测用二硒化铂薄膜场效应晶体管","authors":"Sumit Sharma, Akshay Moudgil, P. Mishra, Samaresh Das","doi":"10.1109/icee50728.2020.9777024","DOIUrl":null,"url":null,"abstract":"2D material-based field-effect transistor (FET) gas sensor has the potential to provide high sensitivity for a chemical analyte, due to their high surface area. In this work, the CVD process is carried out to synthesize PtSe2 nanostructure from RF sputtering deposited Pt thin film. The fabricated FET device is tested for 5 to 50 ppm concentrations of ammonia gas at room temperature conditions, which shows the response from 355% to 150% at 50 and 5 ppm concentration. These results indicate PtSe2 can be used as a promising sensing material for ammonia gas detection.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection\",\"authors\":\"Sumit Sharma, Akshay Moudgil, P. Mishra, Samaresh Das\",\"doi\":\"10.1109/icee50728.2020.9777024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"2D material-based field-effect transistor (FET) gas sensor has the potential to provide high sensitivity for a chemical analyte, due to their high surface area. In this work, the CVD process is carried out to synthesize PtSe2 nanostructure from RF sputtering deposited Pt thin film. The fabricated FET device is tested for 5 to 50 ppm concentrations of ammonia gas at room temperature conditions, which shows the response from 355% to 150% at 50 and 5 ppm concentration. These results indicate PtSe2 can be used as a promising sensing material for ammonia gas detection.\",\"PeriodicalId\":436884,\"journal\":{\"name\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee50728.2020.9777024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee50728.2020.9777024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection
2D material-based field-effect transistor (FET) gas sensor has the potential to provide high sensitivity for a chemical analyte, due to their high surface area. In this work, the CVD process is carried out to synthesize PtSe2 nanostructure from RF sputtering deposited Pt thin film. The fabricated FET device is tested for 5 to 50 ppm concentrations of ammonia gas at room temperature conditions, which shows the response from 355% to 150% at 50 and 5 ppm concentration. These results indicate PtSe2 can be used as a promising sensing material for ammonia gas detection.
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