2020 5th IEEE International Conference on Emerging Electronics (ICEE)最新文献_第10页

Geometrically Dependent Space Charge Modulation and Quasi-saturation Effect in Superjunction-LDMOS Device 超结ldmos器件中几何相关空间电荷调制及准饱和效应

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776875

Aakanksha Mishra, B. Kumar, Jhnanesh Somayaji, Ankur Gupta

{"title":"Geometrically Dependent Space Charge Modulation and Quasi-saturation Effect in Superjunction-LDMOS Device","authors":"Aakanksha Mishra, B. Kumar, Jhnanesh Somayaji, Ankur Gupta","doi":"10.1109/icee50728.2020.9776875","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776875","url":null,"abstract":"Increase in the demand of smart power technologies has posed a restriction on the breakdown voltage of the laterally diffused MOS (LDMOS) transistors. Superjunction-LDMOS devices have shown to offer a low on-resistance while extending the off-state breakdown voltage by the virtue of increasing depletion area in the drift region. This makes them highly suitable in fast switching applications. While they display an outstanding OFF-state performance, these devices severely suffer from space charge modulation (SCM) leading to quasisaturation (QS) effects under high current conditions. This not only affects the operation of the device, but also degrades its safe operating area. Thus, designing such devices in order to meet the off-state requirements while mitigating SCM/QS effect is challenging. Design of a superjunction (SJ) implant in the drift region is reliant on the key process and geometrical variables such as doping, thickness, position and length of the implant, as well as, on the layout parameters like drift-doping and driftscaling. These device design parameters can be optimized individually or in combination of individual parameters in order to enhance the performance of the device. This work focuses on developing an elaborate understanding of the impact of geometrical parameters on the SCM/QS effects while proposing design guidelines aiming to mitigate these ON-state operation challenges and maximize the device performance.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125021011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

THz Device Design for SiGe HBT under Sub-room Temperature to Cryogenic Conditions 亚室温至低温条件下SiGe HBT太赫兹器件设计

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776700

D. Gupta, S. Venkateswarlu, O. Badami, K. Nayak

{"title":"THz Device Design for SiGe HBT under Sub-room Temperature to Cryogenic Conditions","authors":"D. Gupta, S. Venkateswarlu, O. Badami, K. Nayak","doi":"10.1109/icee50728.2020.9776700","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776700","url":null,"abstract":"BiCMOS technology can be a possible replacement for FDSOI and FinFET technology due to their higher transconductance, which allows them to operate at in THz range i.e. radio frequencies (RF) in addition to their higher voltage handling ability. The most advanced SiGe heterojunction bipolar transistor (HBT) technology (55-nm BiCMOS) demonstrates room temperature cut-off frequency ($f_{mathrm{t}}$) and maximum oscillation frequency ($f_{max}$) of 320 GHz and 370 GHz respectively. In this paper, we performed TCAD analysis to investigate the performance metrics, $f_{mathrm{t}}$ and $f_{max}$ of the SiGe HBT at different cryogenic temperatures. The calibrated Gummel characteristics reveals that a record DC current gain of $1.2times 10^{4}$ is obtained at 77 K for $mathrm{V}_{text{BE}}=mathrm{V}_{text{CE}}=1.2 mathrm{V}$. The HBT device employs bandgap engineering by linearly varying the Ge concentration in the base region, which enhances the device performance. Both the bandgap engineering with linearly graded Germanium (Ge) profile (induces intrinsic drift field in the base) and the cryogenic operation of the HBT device results in enhancement of $f_{mathrm{t}}$ and $f_{max}$. Our simulations predict that the value of peak $f_{mathrm{t}}$ decreases below 100 K due to increase in the emitter junction capacitance and the peak $f_{max}$ increase is due to decrease in collector junction capacitance and base resistance. The aggregate metric $f_{mathrm{t}}+f_{max} > 1.2 text{THz}$ is achieved under cryogenic condition without scaling the device, this advantage can be utilized in the THz device applications.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124101423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large area, low power MoSe2 nanostructures based Infrared photodetectors on flexible substrates beyond $2.3 mumathrm{m}$ 基于柔性衬底的大面积、低功耗MoSe2纳米结构红外探测器，价格超过$2.3 mumath {m}$

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776758

John Wellington J, Veerendra Dhyani, S. Maity, S. Mukherjee, S. Ray, Samaresh Das

引用次数: 0

Crystallographic parameters and ordering in MgZnO alloys: An ab-initio study MgZnO合金的晶体学参数和有序:一个从头算研究

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777019

K. G, A. Singh, Rohit Singh

引用次数: 0

An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability AlGaN/GaN HEMT中源极/漏极间距对线性度的影响，以提高器件可靠性

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776708

P. Kaushik, S. K. Singh, Ankur Gupta, A. Basu

引用次数: 0

Design and Simulation of Capacitive Z-axis MEMS Accelerometers using SU-8, PolySi, Si3N4, and SiC-based structural materials 采用SU-8、多晶硅、Si3N4和sic基结构材料的电容式z轴MEMS加速度计的设计与仿真

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776817

M. Jangra, D. S. Arya, Robin Khosla, S. Sharma

{"title":"Design and Simulation of Capacitive Z-axis MEMS Accelerometers using SU-8, PolySi, Si3N4, and SiC-based structural materials","authors":"M. Jangra, D. S. Arya, Robin Khosla, S. Sharma","doi":"10.1109/icee50728.2020.9776817","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776817","url":null,"abstract":"A comparative study of MEMS-based micro accelerometers with four different spring mechanism and four structural materials are presented in this paper. The serpentine spring design is used for the highly sensitive topographic structure after investigating various spring topography due to its reduced spring constant. The highly sensitive serpentine structure-based spring design is simulated for MEMS accelerometers with SU-8, PolySi, Si3N4, and SiC as primary structural materials. After UV exposure, the stiffness of the SU-8 polymer is considered to be varied and measured with the Nano-indentation technique, and the spring constant is calculated with the graphical method. Comparative study of different materials is shown by simulation using COMSOL Multiphysics 5.5. SU-8 being a polymer-based MEMS accelerometer with an acceleration sensitivity of ∼357nm/g, shows high sensitivity and cost-effectiveness, suitable for industry compared to other conventional materials. SU-8 MEMS can be integrated with Si-technology for CMOS-based post-processing circuitry. The stress analysis investigates the spring and structural reliability of the designed micro accelerometers. The computational results of designed accelerometers showed a linear response up to ±50 g of acceleration's input value. The design of SU-8 highly sensitive, serpentine spring, low-cost and simplistic process technology-based Z-axis accelerometer shows the resonant frequency of 1.4 kHz, which is suitable for tactual, and navigation applications.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131656795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CZTSe Kesterite Solar Cell: The Impact of Defects on Loss Mechanisms 铈钙钛矿太阳能电池:缺陷对损耗机制的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776668

L. Sravani, S. Routray, K. P. Pradhan

引用次数: 0

Effective Work Function Computation of HfO2/TiN/W Bi-metal System: Role of Barrier-TiN HfO2/TiN/W双金属体系的有效功函数计算:势垒TiN的作用

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777053

R. Sathiyanarayanan, Dhirendra Vaidya

引用次数: 0

Influence of carrier mobility mismatch over the performance of heterojunction MAPbI3 based Perovskite solar cells 载流子迁移率失配对异质结MAPbI3基钙钛矿太阳能电池性能的影响

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777075

S. V. Patil, Kshitij Bhargava

引用次数: 1

Modeling of $0.18mumathrm{m}$ RF Bulk and SOI Planar MOSFETs using Industry Standard BSIM Models 使用工业标准BSIM模型建模$0.18mu mathm {m}$ RF块体和SOI平面mosfet

2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776772

Aarti Rathi, M. Kumar, Jayhind K. Verma, H. S. Jatana, Y. Chauhan, A. Dixit

引用次数: 0