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2020 5th IEEE International Conference on Emerging Electronics (ICEE)最新文献

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Evaluation of a miniaturized NIR spectrometer for estimating total curcuminoids in powdered turmeric samples 小型近红外光谱仪测定粉末姜黄样品中总姜黄素的评价
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776826
Hasika Suresh, Amruta Ranjan Behera, S. Selvaraja, R. Pratap
{"title":"Evaluation of a miniaturized NIR spectrometer for estimating total curcuminoids in powdered turmeric samples","authors":"Hasika Suresh, Amruta Ranjan Behera, S. Selvaraja, R. Pratap","doi":"10.1109/icee50728.2020.9776826","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776826","url":null,"abstract":"Commercial availability of miniaturized spectrometers, equipped with machine learning, and cloud computing capabilities, is transforming the food-testing industry by enabling instant results and on-the-spot decision making. To demonstrate this, we have evaluated SCiO(TM) from Consumer Physics to quantify curcumin in turmeric with reflectance spectroscopy in the NIR region (740-1050nm). Different pre-processing combinations were tried to maximally extract useful information. The decision of the best combination was based on models built with Partial Least Squared Regression (PLSR) algorithm. The best combination yielded a model with a coefficient of determination ($R2$) of 0.797 and a root-mean-squared error (RMSE) of 0.306. This was validated on a test set of 6 samples and gave a high $R2$ of 0.93. This study shows potential for similar, instant quality analysis of other powdered spices with commercial spectrometers and optimized machine learning models.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127431108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation and thermal study on Defensive MOSFET 防御性MOSFET的辐射和热研究
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776800
Ramprasath M B, R. V, Mohana Kumar N, D. G., S. R
{"title":"Radiation and thermal study on Defensive MOSFET","authors":"Ramprasath M B, R. V, Mohana Kumar N, D. G., S. R","doi":"10.1109/icee50728.2020.9776800","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776800","url":null,"abstract":"As there is a demand for compactness in digital circuits, it is necessary to bring down the size of a MOSFET. In doing so, second order effects play a major role in affecting the performance of a transistor. It is mandatory to reduce the second order effects in order to have an efficient working of the MOSFET. Thus it is necessary to bring improvements (structural and functional) in MOSFET or develop new devices to meet the demands of the current generation. The existing conventional MOSFET and SOI MOSFET structures have certain disadvantages. A new hybrid structure which possesses desirable properties of both these structures is called Defensive MOSFET. The length of the oxide layer changes in different structures of the Defensive MOSFET. The study is aimed at finding the optimum length of the oxide layer by performing Radiation and Thermal Analysis on various structures.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114141937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Low Power and High Speed MAC based FIR Filter using Hybrid Adder and Modified Booth Multiplier 基于混合加法器和改进的Booth乘法器的低功耗高速MAC FIR滤波器设计
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776857
S. Radhakrishnan, R. K. Karn, Mubarak Ali Meerasha, T. Nirmalraj
{"title":"Design of Low Power and High Speed MAC based FIR Filter using Hybrid Adder and Modified Booth Multiplier","authors":"S. Radhakrishnan, R. K. Karn, Mubarak Ali Meerasha, T. Nirmalraj","doi":"10.1109/icee50728.2020.9776857","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776857","url":null,"abstract":"The arithmetic operations namely addition and multiplication play a vital role in digital signal processing applications such as filtering, and equalization. In this work, we developed such a filtering application using hybrid adder, modified Booth multiplier together with multiple-and-accumulate (MAC) unit. The hybrid adder incorporates two or three prevailing adder scheme, leads to significant improvement in speed of operation and lower power consumption. Similarly for multiplication, we adopted the modified Booth multiplier, where a radix-4 encoding scheme is used. The designed adder and multiplier are utilized to design a MAC unit that performs multiplication and addition together. Using the developed MAC unit a digital finite impulse response (FIR) filter is designed with 8-MAC units. The performance metrics such as delay and power consumption are measured using Cadence Virtuoso with 180 nm, 90 nm and 45 nm TSMC technology libraries.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127054859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Two Element SIW Cavity Backed Hexagonal Patch Antenna Array 双单元SIW腔背六边形贴片天线阵列
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776909
Ankit Kumar Pandey, R. Chaudhary, A. K. Saxena
{"title":"A Two Element SIW Cavity Backed Hexagonal Patch Antenna Array","authors":"Ankit Kumar Pandey, R. Chaudhary, A. K. Saxena","doi":"10.1109/icee50728.2020.9776909","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776909","url":null,"abstract":"In this paper, a novel, low profile, two elements cavity backed antenna array has made with Substrate Integrated Waveguide (SIW) square cavity which is backed by a hexagonal patch. The integration of a hexagonal patch antenna in a cavity reduces the surface wave effects which eventually increase the radiation efficiency up to 92%. The single designed antenna which is operating at 17GHz with 2.5 GHz bandwidth exhibits a high 20dB front-to-back ratio and good gain during its entire bandwidth. While a proposed two element array maintains advantages over single element to shows 9 dBi average directivity across the bandwidth with 67°half power beam width which was 80° in single element. Antenna shows −30dB isolation due to no linkage of flux among two elements.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133668324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detection of spent turmeric adulteration in powdered Curcuma longa using Vis-NIR spectroscopy and machine learning 用近红外光谱和机器学习技术检测姜黄粉中掺废姜黄
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776996
Amruta Ranjan Behera, Hasika Suresh, Avinash Kumar, S. Selvaraja, R. Pratap
{"title":"Detection of spent turmeric adulteration in powdered Curcuma longa using Vis-NIR spectroscopy and machine learning","authors":"Amruta Ranjan Behera, Hasika Suresh, Avinash Kumar, S. Selvaraja, R. Pratap","doi":"10.1109/icee50728.2020.9776996","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776996","url":null,"abstract":"Adulteration of turmeric powders with spent turmeric is, unfortunately, a common practice in India, and there is an increased demand for in-field analysis during authentication testing for quick decision making. We propose the use of a miniaturized spectrometer and reflectance spectroscopy in the Vis-NIR range along with machine learning for detecting the level of such adulteration. Six different regression methods were used, and linear regression was found to be the best with less than 15% error in prediction. Demonstration of this application paves the way for use of portable Vis-NIR reflectance spectroscopy to inspect the quality of turmeric powder.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127385110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Diketopyrrolopyrrole based polymers for n-type organic electrochemical transistors n型有机电化学晶体管用双酮吡咯基聚合物
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776972
J. J. Samuel, A. A. Mohapatra, Puttaraju Boregowda, S. Patil, Nagaphani B. Aetukuri
{"title":"Diketopyrrolopyrrole based polymers for n-type organic electrochemical transistors","authors":"J. J. Samuel, A. A. Mohapatra, Puttaraju Boregowda, S. Patil, Nagaphani B. Aetukuri","doi":"10.1109/icee50728.2020.9776972","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776972","url":null,"abstract":"Organic electrochemical transistors (OECTs) find applications in biosensing and bioelectronics. Availability of p- and n-type OECT materials with balanced performance is key to the development of OECT-based circuits for performing multiplexing and signal processing functions in bioelectronic devices. However, the performance of n-type OECT materials lags behind the best p-type materials by several orders of magnitude and there is a clear need for the development of new n-type OECT materials. Here, we report a diketopyrrolopyrrole (DPP) based polymer as a potential candidate material for n-type OECTs. We fabricated DPP-based OECTs and report stable operation of the devices in an aqueous electrolyte","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"827 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115290952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Temperature on DC and AC Characteristics of Stacked Oxide SiO2/HfO2 Cylindrical Gate Tunnel FETs 温度对堆叠氧化SiO2/HfO2圆柱栅隧道场效应管直流和交流特性的影响
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776990
P. Singh, K. Baral, Sanjay Kumar, M. Tripathy, A. K. Singh, R. K. Upadhyay, S. Jit
{"title":"Impact of Temperature on DC and AC Characteristics of Stacked Oxide SiO2/HfO2 Cylindrical Gate Tunnel FETs","authors":"P. Singh, K. Baral, Sanjay Kumar, M. Tripathy, A. K. Singh, R. K. Upadhyay, S. Jit","doi":"10.1109/icee50728.2020.9776990","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776990","url":null,"abstract":"Based on three dimensional mathematical simulation, it has demonstrated that impression of temperature on the DC (i.e. <tex>$I_{d}, g_{m}, SS$</tex>, and <tex>$I_{text{ON}}/I_{text{OFF}}$</tex> ratio) and AC (i.e. <tex>$C_{gg}, f_{t}$</tex>, and GBW) characteristics of stacked-oxide SiO<inf>2</inf>/HfO<inf>2</inf> cylindrical gate (CG) tunnel field-effect transistors (TFETs). From the results of simulation, it is perceived that OFF-state current drastically changed for entire range of temperature (250K to 400K) while ON-state current is almost independent of temperature. Further, the effects of temperature on <tex>$C_{gg}, f_{t}$</tex>, and GBW shows that it is drastically changed at higher <tex>$V_{text{gs}}$</tex> while almost constant with lower <tex>$V_{text{gs}}(V_{text{gs}} < 0.5mathrm{V})$</tex>.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116469528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Various Electrospinning Parameters on Nanofibers Morphology for Flexible Devices 不同静电纺丝参数对柔性器件纳米纤维形态的影响研究
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776912
K. Khanum, Gowda K. Akshay, S. Biswas, Praveen C Ramamurthy
{"title":"Study of Various Electrospinning Parameters on Nanofibers Morphology for Flexible Devices","authors":"K. Khanum, Gowda K. Akshay, S. Biswas, Praveen C Ramamurthy","doi":"10.1109/icee50728.2020.9776912","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776912","url":null,"abstract":"Flexible and lightweight polymer layers with surface topographies are sought-after as substrates to fabricate wearable sensors, displays and photovoltaic devices. This study demonstrates the nanofibers of various topographies through electrospinning. Initially, three important electrospinning parameters are selected, such as applied voltage, flow rate and needle diameter and the variation in nanofibers diameter with respect to these parameters are established. Further, based on established parameters, the effect of needle geometry, solvent, polymer and polymer blend are evaluated. The obtained nanofibers mats are flexible, free-standing and are mostly made up of inexpensive and commercially-available polymers such as polyvinyl alcohol (PVA), poly (methyl methacrylate) PMMA and poly (ethylene oxide) PEO. The topographies obtained are round, flat, conjoined, wrinkled, porous striated and wrinkled with fibers diameter varying from 225 to 1300 nm. Thus, in this study, a single-step process is demonstrated for the generation of nanofibers mats with various topographies.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114587120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Evaluation of Hole-Selective and Passivating $text{MoO}_{mathrm{X}}$ Layers on Si: A Comparative Study of ALD and Evaporation Si上孔选择和钝化层的性能评价:ALD和蒸发的比较研究
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9777067
Suren Patwardhan, S. Maurya, Akash Kumar, Balasubramaniam Kavaipatti
{"title":"Performance Evaluation of Hole-Selective and Passivating $text{MoO}_{mathrm{X}}$ Layers on Si: A Comparative Study of ALD and Evaporation","authors":"Suren Patwardhan, S. Maurya, Akash Kumar, Balasubramaniam Kavaipatti","doi":"10.1109/icee50728.2020.9777067","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9777067","url":null,"abstract":"Dopant-free heterojunction silicon solar cells are fabricated using sub-stoichiometric molybdenum trioxide $(text{MoOx})$ as passivating and hole selective layer for n-type silicon. $text{MoOx}$ is deposited by both, atomic layer deposition (ALD) and thermal evaporation (TE). No separate passivation layer is used in either case. While the ALD films give highly conformal deposition, their performance depends upon factors such as precursors used and process temperature. Our solar cells fabricated using $text{ALD}-text{MoOx}$ could reach nearly 7% efficiency as compared to solar cells using $text{TE}-text{MoOx}$, which reached 10.13%. This difference is mainly attributed to the recombination factor, which is four orders of magnitude higher for $text{ALD}-text{MoOx}$ than $text{TE}-text{MoOx}$. The ideality factor deviated from unity for ALD-MoOx based diodes. The average carrier lifetime obtained for TE-MoOx films crossed 100 microseconds, while for $text{ALD}-text{MoOx}$, it is about 55 microseconds. These observations indicate ALD-$text{MoOx}-text{Si}$ interface is influenced by detrimental parameters like high density of defect states or surface contaminants or both, which are incorporated during ALD of $text{MoOx}$ as all the other processing steps are common for both routes. The undesirably high recombination factor may have resulted due to use of carbon-based precursor or use of ozone as oxygen precursor.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129811620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene and hexagonal boron nitride based nano-electronic biosensor 石墨烯和六方氮化硼基纳米电子生物传感器
2020 5th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2020-11-26 DOI: 10.1109/icee50728.2020.9776951
S. Rani, S. Ray
{"title":"Graphene and hexagonal boron nitride based nano-electronic biosensor","authors":"S. Rani, S. Ray","doi":"10.1109/icee50728.2020.9776951","DOIUrl":"https://doi.org/10.1109/icee50728.2020.9776951","url":null,"abstract":"Two dimensional layered single crystal materials have attracted huge attention in the field of Nano-electronics, photovoltaics, and optoelectronics due to their tunable mechanical, electronic, and optical properties. The combination of two single layered materials forms Van der Waal's heterostructure, which can offer structural versatility and engineered functionality of the constituent layers. On the other hand, rapid detection and sequencing of various DNA/RNA nucleobases is a very promising challenge of modern day medical science. In this work, we have investigated the behavior of Graphene and hexagonal boron nitride heterostructure based single electron transistor (SET) devices for the sensing/detection of such nucleobases. First-principles based DFT-NEGF was used for calculating the electrostatic, adsorption, switching, and transport behavior of the system. The presence of a specific molecule within the SET can be identified from respective line scans of the charge stability diagram. The current investigation offers a novel detection methodology for various nucleobase, which is very energy efficient, offers superior detection sensitivity, and has a wide temperature range of operation.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122232756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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