基于y2o3的人工突触记忆系统的解析建模

Sanjay Kumar, Mangal Das, K. Jyoti, Amit Shukla, Abhishek Kataria, S. Mukherjee
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引用次数: 0

摘要

人工突触是神经形态系统中信息处理的关键单元。忆阻系统因其结构简单、电导逐渐变化和高密度集成而被广泛用作人工突触。本文讨论了具有新抛物窗函数的y2o3基忆阻系统在人工突触中的非线性解析模型。此外,利用非线性分析模型对忆阻系统的电阻开关特性和突触可塑性特性进行了建模,研究了人工突触的性能。此外,模型数据还得到了装置实验结果的验证,证实了所建立的模型能够实现尖峰神经元的基本功能,在神经形态计算方面具有很大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analytical Modelling of Y2O3-based Memristive System for Artificial Synapses
Artificial synapses are the key units for information processing in neuromorphic systems. Memristive systems are frequently used as an artificial synapse because of their simple structures, gradually changing conductance and high-density integration. In this work, a non-linear analytical model for Y2O3-based memristive system with new parabolic window function has been discussed for artificial synapses applications. Moreover, resistive switching characteristic and synaptic plasticity properties of the memristive systems are modelled by utilizing non-linear analytical model to investigate the performance of artificial synapse. Further, the modelled data is verified by the experimental results of fabricated devices which confirmed that the developed model can be realized the basic functions of spiking neurons and has great potential for neuromorphic computing.
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