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Similarities between birefringent gires-tournois interferometer and double ring assisted mach- zehnder electrooptic modulator 双折射陀螺干涉仪与双环辅助马赫-曾德尔电光调制器的相似之处
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405448
J.E.B. Oliveira, B.F.R. Sakamoto, W. dos Santos Fegadolli
{"title":"Similarities between birefringent gires-tournois interferometer and double ring assisted mach- zehnder electrooptic modulator","authors":"J.E.B. Oliveira, B.F.R. Sakamoto, W. dos Santos Fegadolli","doi":"10.1109/EUMC.2007.4405448","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405448","url":null,"abstract":"Recently, Gires -Toumois's interferometer (GTI) relying on electrooptic materials have been attracting great interest because they may enable high linear dynamic range optical modulators. Therefore GTI's may play a major role on the subject of signal processing in the field of microwave photonics. This paper addresses the modeling of a novel birefringent GTI modulator set -up as a double ring assisted Mach-Zehnder modulator (RAMZI). The modeling takes into account the front surface mirror reflectance and reveals that GTI based modulators may yield a dynamic range as high as that achieved with RAMZI, with requires a rather more complex fabrication technology. Results of numerical simulations obtained with a GTI configuration which relics on Lithium Niobate (LiNbO3) and enables a push-pull operation with a single voltage source are presented.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121991556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Dielectric charging process in AlN RF-MEMS capacitive switches AlN RF-MEMS电容开关的介电充电过程
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405450
G. Papaioannou, T. Lisec
{"title":"Dielectric charging process in AlN RF-MEMS capacitive switches","authors":"G. Papaioannou, T. Lisec","doi":"10.1109/EUMC.2007.4405450","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405450","url":null,"abstract":"The paper investigates the electrical properties of magnetron sputtered AlN in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130211389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Highly compact 3.1 -10.6 GHz UWB LNA in SiGe HBT technology 采用SiGe HBT技术的高度紧凑3.1 -10.6 GHz UWB LNA
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/ECWT.2007.4404013
J. Dederer, S. Chartier, T. Feger, U. Spitzberg, A. Trasser, Hermann Schumacher
{"title":"Highly compact 3.1 -10.6 GHz UWB LNA in SiGe HBT technology","authors":"J. Dederer, S. Chartier, T. Feger, U. Spitzberg, A. Trasser, Hermann Schumacher","doi":"10.1109/ECWT.2007.4404013","DOIUrl":"https://doi.org/10.1109/ECWT.2007.4404013","url":null,"abstract":"We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. AH performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm2.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125943768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Flip-chip mounted 1:4 demultiplexer IC in InP DHBT technology operating up to 100 Gb/s 采用InP DHBT技术的倒装1:4解复用集成电路，运行速度高达100gb /s
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405395
C. Karnfelt, J. Hallin, T. Kjellberg, B. Hansson, T. Swahn
{"title":"Flip-chip mounted 1:4 demultiplexer IC in InP DHBT technology operating up to 100 Gb/s","authors":"C. Karnfelt, J. Hallin, T. Kjellberg, B. Hansson, T. Swahn","doi":"10.1109/EUMC.2007.4405395","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405395","url":null,"abstract":"Operation of a packaged 1:4 demultiplexer (DEMUX) in InP DHBT technology for an input data rate of up to 100 Gb/s is presented. The DEMUX IC is flip-chip mounted in a microwave package consisting of an aluminum nitride substrate with coplanar waveguides placed in a Kovar/MoCu housing with coaxial V-connectors. The DEMUX was operated at a supply voltage of -3.5 V and consumes 2.1 W.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"876 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133794662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of a transceiver RFIC for UWB chaotic OOK System in 0.18um CMOS technology 基于0.18um CMOS技术的超宽带混沌OOK系统收发器RFIC设计
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/ECWT.2007.4404020
M. Jeong, Jeong-Ho Moon, C. Lee
{"title":"Design of a transceiver RFIC for UWB chaotic OOK System in 0.18um CMOS technology","authors":"M. Jeong, Jeong-Ho Moon, C. Lee","doi":"10.1109/ECWT.2007.4404020","DOIUrl":"https://doi.org/10.1109/ECWT.2007.4404020","url":null,"abstract":"A transceiver RFIC for ultra wideband (UWB) chaotic on-off keying (OOK) system is designed and verified in 0.18 mum CMOS technology. The transceiver RFIC is composed of a quasi-chaotic signal generator, an OOK modulator, a gain-controlled low noise amplifier (GC LNA), an envelop detector, and a baseband variable gain amplifier (VGA). The quasi-chaotic signal generator proposed in this paper is composed of a voltage control oscillator (VCO), a frequency divider, a PN-generator, and an up-conversion mixer. The chip size is 2.4 x 1.2 mm2. The current of the chip is 41 mA at transmit mode and 17 mA at receive mode with a supply voltage of 1.8 V. The result of the loop-back test shows that output signal level of the envelop detector is 200 mVp-p and invariant up-to 1 Mbps data rate.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130812806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A cost-effective high-power S-band 6-bit phase shifter with integrated LVCMOS control logic 具有集成LVCMOS控制逻辑的高性价比高功率s波段6位移相器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405430
A. P. de Hek, M. Rodenburg, F. V. van Vliet
{"title":"A cost-effective high-power S-band 6-bit phase shifter with integrated LVCMOS control logic","authors":"A. P. de Hek, M. Rodenburg, F. V. van Vliet","doi":"10.1109/EUMC.2007.4405430","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405430","url":null,"abstract":"In this paper the design and performance of a high-power S-band 6-bit phase shifter is discussed. It is shown that excellent results have been obtained in the low cost high volume PP50-11 0.5 um PHEMT process of WIN Semiconductors. The obtained results demonstrate that realization of a single chip transmit chip consisting of a phase shifter and a high-power amplifier is feasible.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129028977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology 采用SiGe:C BiCMOS技术的全集成全差分低噪声放大器，用于近距离汽车雷达
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EMICC.2007.4412735
S. Chartier, B. Schleicher, F. Korndorfer, S. Glisic, G. Fischer, H. Schumacher
{"title":"A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology","authors":"S. Chartier, B. Schleicher, F. Korndorfer, S. Glisic, G. Fischer, H. Schumacher","doi":"10.1109/EMICC.2007.4412735","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412735","url":null,"abstract":"A fully integrated fully differential low-noise amplifier for 79 GHz short range radar applications using a highspeed SiGe:C BiCMOS technology is presented. The integrated circuit uses thin-film microstrip lines and exhibits compact design (530 times 690 mum2), low power consumption (90 mW at 3 V supply voltage), high gain (13 dB gain at 81 GHz), good linearity and reverse isolation. In order to ease the measurements of the circuit, a simple technique was used to measure single-ended the differential amplifier. To overcome possible inaccuracy of the line model, shorting bars are placed along these elements to allow easy correction and to avoid redesign.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123127424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A regulated low phase noise differential colpitts VCO for mobile RFID system 一种用于移动RFID系统的可调节低相位噪声差动压控振荡器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EMICC.2007.4412712
Hyoung-Hwan Roh, Eun-Jin Lee, Jin‐Wook Jung, Kyong-Tae Park, Kwan-Kyu Nae, Hong-Goo Cho, Jun-Seok Park, Jong-Eun Jang
{"title":"A regulated low phase noise differential colpitts VCO for mobile RFID system","authors":"Hyoung-Hwan Roh, Eun-Jin Lee, Jin‐Wook Jung, Kyong-Tae Park, Kwan-Kyu Nae, Hong-Goo Cho, Jun-Seok Park, Jong-Eun Jang","doi":"10.1109/EMICC.2007.4412712","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412712","url":null,"abstract":"A regulated low phase noise differential colpitts VCO (voltage controlled oscillator) for mobile RFID system is presented. The differential colpitts VCO meets the multiple-interrogator environment specifications. The VCO use a 0.35 mum technology and achieves tuning range 1.55 GHz -2.053 GHz. Measuring 910 MHz frequency divider output, phase noise performance is -106 dBc/Hz and -135 dBc/Hz at 40 kHz and 1 MHz offset, respectively. 5-bit digital coarse-tuning and accumulation type MOS varactors allow for 28.2% tuning range, which is required to cover the LO frequency range of a UHF mobile RFID system. Optimum design techniques ensure low VCO gain (< 45 MHz/V) for good interoperability with the frequency synthesizer. To the author' knowledge, this differential colpitts VCO achieves a figure of merit (FOM) of 1.93 dB at 2-GHz band.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125883017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Ka-band RF-MEMS phase shifter approach based on a novel dual-state microstrip line 基于新型双态微带线的ka波段RF-MEMS移相器方法
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EMICC.2007.4412739
C. Siegef, V. Zieglerl, U. Prechtel, B. Schonlinner, H. Schumacher
{"title":"A Ka-band RF-MEMS phase shifter approach based on a novel dual-state microstrip line","authors":"C. Siegef, V. Zieglerl, U. Prechtel, B. Schonlinner, H. Schumacher","doi":"10.1109/EMICC.2007.4412739","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412739","url":null,"abstract":"This paper presents the design and realization of a 3-bit RF-MEMS based phase shifter at 34 GHz using a very-low complexity and highly reliable RF-MEMS technology on silicon. The three bits of the circuit use different techniques to achieve the necessary phase shifts. One new design technique, the dual-state microstrip line, is enabled by the presented RF-MEMS technology and changes the effective epsivr of a microstrip transmission line by lifting part of it into the air. This leads to a change in the electrical length of the microstrip transmission line, which in turn results in a phase shift. The related insertion loss of the 45deg bit is less then -0.35 dB and a matching better -19 dB for both switching states. Further on, a loaded-line bit with 45deg of phase shift is realized by switching between a capacitive and an inductive load. The capacitive switching state shows an insertion loss of -0.4 dB and a matching better -13 dB, while the inductive load has an insertion loss of -0.7 dB and a matching of -25 dB. The loaded-line bit combined with the dual-state microstrip line is used for the 90deg-bit. An additional miniaturized switched line phase shifter is implemented for the 180deg state. The three bits were combined and measured in all states. The results of the 3-bit phase shifter are shown with a mean insertion loss of -2.2 dB and a phase derivation of 13.25deg at 34 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122168956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model 基于物理的精确非线性PIN二极管模型的高功率S波段限幅器仿真
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-10-29 DOI: 10.1109/EMICC.2007.4412650
E. Gatard, R. Sommet, P. Bouysse, R. Quéré, M. Stanislawiak, J. Bureau
{"title":"High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model","authors":"E. Gatard, R. Sommet, P. Bouysse, R. Quéré, M. Stanislawiak, J. Bureau","doi":"10.1109/EMICC.2007.4412650","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412650","url":null,"abstract":"This paper deals with the simulation and the design of an active dual stage high power S band limiter. The contribution of this work relies on an accurate nonlinear PIN diode model that has been used to predict the limiter performances. This model takes into account recombination phenomenon in the heavily doped region and include junctions effects. In the first section, the model is presented and validated by measurement results on two thin diodes. In the second section, the limiter output power and isolation characteristics are validated by power measurements up to +55 dBm and by spectrum measurements.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126613689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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