A cost-effective high-power S-band 6-bit phase shifter with integrated LVCMOS control logic

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI:10.1109/EUMC.2007.4405430

A. P. de Hek, M. Rodenburg, F. V. van Vliet

引用次数: 6

Abstract

In this paper the design and performance of a high-power S-band 6-bit phase shifter is discussed. It is shown that excellent results have been obtained in the low cost high volume PP50-11 0.5 um PHEMT process of WIN Semiconductors. The obtained results demonstrate that realization of a single chip transmit chip consisting of a phase shifter and a high-power amplifier is feasible.

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具有集成LVCMOS控制逻辑的高性价比高功率s波段6位移相器

本文讨论了大功率s波段6位移相器的设计和性能。结果表明，在WIN半导体的低成本、高体积PP50-11 0.5 um PHEMT工艺中取得了优异的效果。结果表明，用移相器和大功率放大器组成的单片传输芯片是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 European Microwave Integrated Circuit Conference

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