{"title":"具有集成LVCMOS控制逻辑的高性价比高功率s波段6位移相器","authors":"A. P. de Hek, M. Rodenburg, F. V. van Vliet","doi":"10.1109/EUMC.2007.4405430","DOIUrl":null,"url":null,"abstract":"In this paper the design and performance of a high-power S-band 6-bit phase shifter is discussed. It is shown that excellent results have been obtained in the low cost high volume PP50-11 0.5 um PHEMT process of WIN Semiconductors. The obtained results demonstrate that realization of a single chip transmit chip consisting of a phase shifter and a high-power amplifier is feasible.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A cost-effective high-power S-band 6-bit phase shifter with integrated LVCMOS control logic\",\"authors\":\"A. P. de Hek, M. Rodenburg, F. V. van Vliet\",\"doi\":\"10.1109/EUMC.2007.4405430\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the design and performance of a high-power S-band 6-bit phase shifter is discussed. It is shown that excellent results have been obtained in the low cost high volume PP50-11 0.5 um PHEMT process of WIN Semiconductors. The obtained results demonstrate that realization of a single chip transmit chip consisting of a phase shifter and a high-power amplifier is feasible.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMC.2007.4405430\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMC.2007.4405430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
摘要
本文讨论了大功率s波段6位移相器的设计和性能。结果表明，在WIN半导体的低成本、高体积PP50-11 0.5 um PHEMT工艺中取得了优异的效果。结果表明，用移相器和大功率放大器组成的单片传输芯片是可行的。
A cost-effective high-power S-band 6-bit phase shifter with integrated LVCMOS control logic
In this paper the design and performance of a high-power S-band 6-bit phase shifter is discussed. It is shown that excellent results have been obtained in the low cost high volume PP50-11 0.5 um PHEMT process of WIN Semiconductors. The obtained results demonstrate that realization of a single chip transmit chip consisting of a phase shifter and a high-power amplifier is feasible.
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