Dielectric charging process in AlN RF-MEMS capacitive switches

Abstract

The paper investigates the electrical properties of magnetron sputtered AlN in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.