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2007 European Microwave Integrated Circuit Conference最新文献

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Cascaded single-stage amplifier with improved gain-frequency performance using frequency-dependent lossy artificial lines 利用频率相关的有损人工线改进增益-频率性能的级联单级放大器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412679
B. Virdee, M. Yazgi, A. Virdee
{"title":"Cascaded single-stage amplifier with improved gain-frequency performance using frequency-dependent lossy artificial lines","authors":"B. Virdee, M. Yazgi, A. Virdee","doi":"10.1109/EMICC.2007.4412679","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412679","url":null,"abstract":"The gain-frequency performance of the cascaded single-stage distributed amplifier (CSSDA) configuration, which was designed for power application, is considerably improved in terms of significantly reduced in-band gain ripple without compromising its bandwidth. This is achieved with the incorporation of passive components within artificial transmission lines constituting the CSSDA so that it exhibits frequency-dependent loss behaviour.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130134821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Quarter-wave patch antenna based on BCB polymer for sensor network applications 基于BCB聚合物的传感器网络四分之一波贴片天线
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412789
S. Seok, N. Rolland, P. Rolland
{"title":"Quarter-wave patch antenna based on BCB polymer for sensor network applications","authors":"S. Seok, N. Rolland, P. Rolland","doi":"10.1109/EMICC.2007.4412789","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412789","url":null,"abstract":"This paper presents a design, fabrication and characterization of a 60 GHz lambda/4-patch antenna compatible with a benzeocyclobutene polymer packaging. The patch and ground plane size are adjusted to reduce the antenna size for matching to the package size. The designed size was 2times2times0.05 mm3. Using electromagnetic simulation, the proposed antenna was optimized by investigating the resonance characteristic and radiation pattern depending on the distance between patch and ground plane and the separation between shorting-pin and feed line. The prototype square patch antenna is manufactured on pyrex glass #7740 and shows a return loss of 30 dB at 65 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126736753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application 用于x波段高功率应用的9.5-10.5GHz 60W AlGaN/GaN HEMT
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412676
T. Yamamoto, E. Mitani, K. Inoue, M. Nishi, S. Sano
{"title":"A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application","authors":"T. Yamamoto, E. Mitani, K. Inoue, M. Nishi, S. Sano","doi":"10.1109/EMICC.2007.4412676","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412676","url":null,"abstract":"In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technology is extension of well-established Eudyna commercial L-/S-band AlGaN/GaN HEMT technology. The device shows output power of over 60W and a high linear gain of 9.6dB in wide frequency range of 9.5-10.5GHz, operating at 40 V drain bias voltage with the pulsed conditions at a duty of 10% with a pulse width of 100 musec. The results show the developed 60W AlGaN/GaN HEMT has high power capability covering practical frequency range for X-band high power applications with proven device technology.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125847642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
100 GHz push-push oscillator in 90 nm CMOS technology 采用90纳米CMOS技术的100 GHz推推振荡器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412660
T. Karttaavi, J. Holmberg
{"title":"100 GHz push-push oscillator in 90 nm CMOS technology","authors":"T. Karttaavi, J. Holmberg","doi":"10.1109/EMICC.2007.4412660","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412660","url":null,"abstract":"A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115134473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime 低带隙III-V基hemt和亚100nm CMOS在低漏极电压下的基准测试
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412637
S. Bollaert, L. Desplanque, X. Wallart, Y. Roelens, M. Malmkvist, M. Borg, E. Lefebvre, J. Grahn, D. Smith, G. Dambrine
{"title":"Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime","authors":"S. Bollaert, L. Desplanque, X. Wallart, Y. Roelens, M. Malmkvist, M. Borg, E. Lefebvre, J. Grahn, D. Smith, G. Dambrine","doi":"10.1109/EMICC.2007.4412637","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412637","url":null,"abstract":"this works reports on speed and high performance benchmarking of low band gap III-V based-HEMTs versus advanced n-MOSFET in low drain voltage regime (few kT/q). In this low bias condition, figure of merits such as, fT are higher and intrinsic gate delay and energy are almost one order of magnitude lower in the case of III-V based-devices (two orders of magnitude for the delay-energy product).","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121672459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low power consumptive mixed mode MMIC power amplifier module for WCDMA Handset Applications 用于WCDMA手机应用的低功耗混合模式MMIC功率放大器模块
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EMICC.2007.4412756
Min Park, Y. Choi, T.Y. Kang, K. Park, Seong-Su Park, S. Hyun
{"title":"Low power consumptive mixed mode MMIC power amplifier module for WCDMA Handset Applications","authors":"Min Park, Y. Choi, T.Y. Kang, K. Park, Seong-Su Park, S. Hyun","doi":"10.1109/EMICC.2007.4412756","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412756","url":null,"abstract":"A high average-efficient MMIC power amplifier is implemented utilizing mixed mode power stage techniques with proper linearity. The average power efficiency, which is more important fact to save the battery in handsets, is improved about three times than commercial PAs with only supply voltage of 3.0-V. The power amplifier has been optimized for different P1 dB (1-dB compression point) value: one for 16 dBm for the low power mode, targeting the most probable transmission power, and the other for 28 dBm for the high power mode. A PAE of 29.0% at 16 dBm of out power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 46.7% at 28.2 dBm for the high power mode. The measured adjacent channel leakage power ratios (ACLR) at the high and low power mode of PldB are -36.17 and -36.16 dBc, respectively, and satisfy the Third-Generation Partnership Project (3GPP) WCDMA specification.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125162199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstrip thin-film MCM-D technology on high-resistivity silicon with integrated through-substrate vias 高电阻率硅微带薄膜MCM-D技术
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405398
G. Posada, G. Carchon, P. Soussan, N. Pham, B. Majeed, D. Sabuncouglu, W. Ruythooren, B. Nauwelaers, W. De Raedt
{"title":"Microstrip thin-film MCM-D technology on high-resistivity silicon with integrated through-substrate vias","authors":"G. Posada, G. Carchon, P. Soussan, N. Pham, B. Majeed, D. Sabuncouglu, W. Ruythooren, B. Nauwelaers, W. De Raedt","doi":"10.1109/EUMC.2007.4405398","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405398","url":null,"abstract":"The integration of through-substrate vias on 100 mum thick high-resistivity silicon (HRSi) wafers within the thin-film multi-chip module technology (MCM-D) is demonstrated in this paper. High quality integrated lumped elements such as thin-film resistors, capacitors and inductors are demonstrated on a microstrip configuration within an MCM-D technology. Microstrip lines integrated on the thin HRSi present a quality factor 2.5 times higher than CPW lines with similar dimensions on AF45 glass, highlighting the advantages of using microstrip type of circuits. High-quality distributed-element bandpass filters at 30 GHz are presented proving the ability of the technology to integrate high frequency circuits as well. Being able to integrate high quality passive components at various frequencies, it is a powerful technology platform for the integration of high performance system in a package (SiP) modules.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128307104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
EM simulation accuracy enhancement for broadband modeling of on-wafer passive components 提高片上无源元件宽带建模的电磁仿真精度
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405426
T. Johansen, C. Jiang, D. Hadziabdic, V. Krozer
{"title":"EM simulation accuracy enhancement for broadband modeling of on-wafer passive components","authors":"T. Johansen, C. Jiang, D. Hadziabdic, V. Krozer","doi":"10.1109/EUMC.2007.4405426","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405426","url":null,"abstract":"This paper describes methods for accuracy enhancement in broadband modeling of on-wafer passive components using electromagnetic (EM) simulation. It is shown that standard excitation schemes for integrated component simulation leads to poor correlation with on-wafer measurements beyond the lower GHz frequency range. We show that this is due to parasitic effects and higher-order modes caused by the excitation schemes. We propose a simple equivalent circuit for the parasitic effects in the well-known ground ring excitation scheme. An extended L-2L calibration method is shown to improve significantly the accuracy of the on-wafer component modeling, when applied to parasitic effect removal associated with the excitation schemes.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128363090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
Backplane equalization comparison for 10-Gb/s data communication with 0.25-μm SiGe BiCMOS and 0.18-μm CMOS feed-forward equalizers 采用0.25-μm SiGe BiCMOS和0.18 μm CMOS前馈均衡器进行10gb /s数据通信的背板均衡比较
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EMICC.2007.4412703
H. Kim, A. Raghavan, E. Gebara, J. Laskar
{"title":"Backplane equalization comparison for 10-Gb/s data communication with 0.25-μm SiGe BiCMOS and 0.18-μm CMOS feed-forward equalizers","authors":"H. Kim, A. Raghavan, E. Gebara, J. Laskar","doi":"10.1109/EMICC.2007.4412703","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412703","url":null,"abstract":"Two feed-forward equalizers are designed to improve high data rate signal transmission in backplanes. They are fabricated in 0.18-mum CMOS and 0.25-mum SiGe BiCMOS technology respectively. The system specification for the two equalizers is similar and they both address 10-Gb/s data rate transmission. Analog multiplier cells, active delay units and output buffers comprise the building blocks of each FFE. A comparison of the two equalizers is conducted with reference to design topology. The impact of technology on key performance parameters such as delay and gain is discussed. When a 10-Gb/s non-return to zero signal is received through a 20-inch backplane, it is found that both equalizers successfully improve signal integrity by channel equalization. The BiCMOS FFE exhibits better performance as compared to the CMOS FFE but also dissipates more DC power.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127404737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Calculation of characteristic impedance for stripline based on planar circuit and lateral equivalent network 基于平面电路和横向等效网络的带状线特性阻抗计算
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-17 DOI: 10.1109/EUMC.2007.4405457
Kai Ding, T. Hiraoka, J. Hsu
{"title":"Calculation of characteristic impedance for stripline based on planar circuit and lateral equivalent network","authors":"Kai Ding, T. Hiraoka, J. Hsu","doi":"10.1109/EUMC.2007.4405457","DOIUrl":"https://doi.org/10.1109/EUMC.2007.4405457","url":null,"abstract":"Stripline is a key component for MIC. Therefore, exact calculation of the characteristic impedance is important for analysis and synthesis of stripline circuit. There are many calculation methods for stripline with zero or finite strip thickness. Exact solution for zero thickness was already given by conformal transformation method, but that for finite thickness is not. So far, relatively exact solution is given by fringing capacitance method. Here, new and systematic mode analysis method is proposed, which is based on lateral equivalent network and can give more exact characteristic impedance for stripline with any thickness including zero thickness. This method is demonstrated to be valid and useful by good agreement with the exact results for zero thickness.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121591313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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