采用0.25-μm SiGe BiCMOS和0.18 μm CMOS前馈均衡器进行10gb /s数据通信的背板均衡比较

H. Kim, A. Raghavan, E. Gebara, J. Laskar
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引用次数: 3

摘要

设计了两个前馈均衡器,以提高背板的高数据速率信号传输。它们分别采用0.18 μ m CMOS和0.25 μ m SiGe BiCMOS技术制造。这两种均衡器的系统规格相似,都适用于10gb /s数据速率传输。模拟乘法器单元、有源延迟单元和输出缓冲器组成了每个FFE的构建模块。参考设计拓扑,对两种均衡器进行了比较。讨论了技术对延迟和增益等关键性能参数的影响。当通过20英寸背板接收到10gb /s不归零信号时,发现两个均衡器都通过通道均衡成功地提高了信号的完整性。与CMOS FFE相比,BiCMOS FFE表现出更好的性能,但也消耗了更多的直流功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Backplane equalization comparison for 10-Gb/s data communication with 0.25-μm SiGe BiCMOS and 0.18-μm CMOS feed-forward equalizers
Two feed-forward equalizers are designed to improve high data rate signal transmission in backplanes. They are fabricated in 0.18-mum CMOS and 0.25-mum SiGe BiCMOS technology respectively. The system specification for the two equalizers is similar and they both address 10-Gb/s data rate transmission. Analog multiplier cells, active delay units and output buffers comprise the building blocks of each FFE. A comparison of the two equalizers is conducted with reference to design topology. The impact of technology on key performance parameters such as delay and gain is discussed. When a 10-Gb/s non-return to zero signal is received through a 20-inch backplane, it is found that both equalizers successfully improve signal integrity by channel equalization. The BiCMOS FFE exhibits better performance as compared to the CMOS FFE but also dissipates more DC power.
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