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A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions 故障条件下垂直SiC功率mosfet的结构热模型描述
IF 0.4
Active and Passive Electronic Components Pub Date : 2016-01-01 DOI: 10.1155/2016/9414901
A. Maerz, Teresa Bertelshofer, M. Bakran
{"title":"A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions","authors":"A. Maerz, Teresa Bertelshofer, M. Bakran","doi":"10.1155/2016/9414901","DOIUrl":"https://doi.org/10.1155/2016/9414901","url":null,"abstract":"The accurate prediction of the SiC MOSFET withstanding time for single fault events greatly influences the requirements for device protection circuits for these devices in power converter applications, like voltage source inverters or power electronic transformers. For this reason, a thermal model, based on the structural design and the physical dimensions of the chip as well as material properties of 4H-SiC, is proposed. This article gives a general description of the thermal behaviour of vertical SiC MOSFET under various driving and boundary conditions in case of a short-circuit event. The thermal model substitutes destructive tests of a device for an individual set of boundary conditions of an occurring fault event. The validity of the analytically parametrised thermal model is verified by experimental short-circuit tests of state-of-the-art vertical SiC MOSFETs for a set of various boundary conditions. The investigated thermal model can furthermore be used to standardise different gate-oxide degradation values from the literature for means of lifetime prediction of the gate oxide for an individual application under repetitive occurring fault or overload conditions. These manufacturer specific reported values measured with no standardised testing procedures can be translated into a maximum junction temperature, which is repeatedly reached. The thermal model therefore provides a unifying parameter for the gate-oxide lifetime calculation for an individual chip and application.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-12"},"PeriodicalIF":0.4,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/9414901","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64613646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET 带非抛物性对纳米SOI MOSFET阈值电压的影响
IF 0.4
Active and Passive Electronic Components Pub Date : 2016-01-01 DOI: 10.1155/2016/6068171
Y. Omura
{"title":"Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET","authors":"Y. Omura","doi":"10.1155/2016/6068171","DOIUrl":"https://doi.org/10.1155/2016/6068171","url":null,"abstract":"This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2 layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-8"},"PeriodicalIF":0.4,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/6068171","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64456737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Apodization Optimization of FBG Strain Sensor for Quasi-Distributed Sensing Measurement Applications 准分布式传感测量应用中光纤光栅应变传感器的解耦优化
IF 0.4
Active and Passive Electronic Components Pub Date : 2016-01-01 DOI: 10.1155/2016/6523046
F. Chaoui, O. Aghzout, Mounia Chakkour, M. E. Yakhloufi
{"title":"Apodization Optimization of FBG Strain Sensor for Quasi-Distributed Sensing Measurement Applications","authors":"F. Chaoui, O. Aghzout, Mounia Chakkour, M. E. Yakhloufi","doi":"10.1155/2016/6523046","DOIUrl":"https://doi.org/10.1155/2016/6523046","url":null,"abstract":"A novel optimized apodization of Fiber Bragg Grating Sensor (FBGS) for quasi-distributed strain sensing applications is developed and introduced in this paper. The main objective of the proposed optimization is to obtain a reflectivity level higher than 90% and a side lobe level around −40 dB, which is suitable for use in quasi-distributed strain sensing application. For this purpose, different design parameters as apodization profile, grating length, and refractive index have been investigated to enhance and optimize the FBGS design. The performance of the proposed apodization has then been compared in terms of reflectivity, side lobe level (SLL), and full width at half maximum (FWHM) with apodization profiles proposed by other authors. The optimized sensor is integrated on quasi-distributed sensing system of 8 sensors demonstrating high reliability. Wide strain sensitivity range for each channel has also been achieved in the quasi-distributed system. Results prove the efficiency of the proposed optimization which can be further implemented for any quasi-distributed sensing application.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-8"},"PeriodicalIF":0.4,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/6523046","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64482457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Design of a Narrow Bandwidth Bandpass Filter Using Compact Spiral Resonator with Chirality 利用具有手性的紧凑螺旋谐振器设计窄带宽带通滤波器
IF 0.4
Active and Passive Electronic Components Pub Date : 2016-01-01 DOI: 10.1155/2016/7074392
Weiping Li, Z. Tang, Xin Cao
{"title":"Design of a Narrow Bandwidth Bandpass Filter Using Compact Spiral Resonator with Chirality","authors":"Weiping Li, Z. Tang, Xin Cao","doi":"10.1155/2016/7074392","DOIUrl":"https://doi.org/10.1155/2016/7074392","url":null,"abstract":"In this article, a compact narrow-bandpass filter with high selectivity and improved rejection level is presented. For miniaturization, a pair of double negative (DNG) cells consisting of quasi-planar chiral resonators are cascaded and electrically loaded to a microstrip transmission line; short ended stubs are introduced to expand upper rejection band. The structure is analyzed using equivalent circuit models and simulated based on EM simulation software. For validation, the proposed filter is fabricated and measured. The measured results are in good agreement with the simulated ones. By comparing to other filters in the references, it is shown that the proposed filter has the advantage of skirt selectivity and compact size, so it can be integrated more conveniently in modern wireless communication systems and microwave planar circuits.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-6"},"PeriodicalIF":0.4,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/7074392","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64504323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Considerations of Physical Design and Implementation for 5 MHz-100 W LLC Resonant DC-DC Converters 5mhz - 100w LLC谐振DC-DC变换器物理设计与实现的考虑
IF 0.4
Active and Passive Electronic Components Pub Date : 2016-01-01 DOI: 10.1155/2016/4027406
Akinori Hariya, K. Matsuura, H. Yanagi, S. Tomioka, Y. Ishizuka, T. Ninomiya
{"title":"Considerations of Physical Design and Implementation for 5 MHz-100 W LLC Resonant DC-DC Converters","authors":"Akinori Hariya, K. Matsuura, H. Yanagi, S. Tomioka, Y. Ishizuka, T. Ninomiya","doi":"10.1155/2016/4027406","DOIUrl":"https://doi.org/10.1155/2016/4027406","url":null,"abstract":"Recently, high power-density, high power-efficiency, and wide regulation range isolated DC-DC converters have been required. This paper presents considerations of physical design and implementation for wide regulation range MHz-level LLC resonant DC-DC converters. The circuit parameters are designed with 3–5 MHz-level switching frequency. Also, the physical parameters and the size of the planar transformer are optimized by using derived equations and finite element method (FEM) with Maxwell 3D. Some experiments are done with prototype LLC resonant DC-DC converter using gallium nitride high electron mobility transistors (GaN-HEMTs); the input voltage is 42–53 V, the reference output voltage is 12 V, the load current is 8 A, the maximum switching frequency is about 5 MHz, the total volume of the circuit is 4.1 cm3, and the power density of the prototype converter is 24.4 W/cc.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"027406"},"PeriodicalIF":0.4,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/4027406","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64362220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Semiconductors: Materials, Physics, and Devices 半导体:材料、物理和器件
IF 0.4
Active and Passive Electronic Components Pub Date : 2016-01-01 DOI: 10.1155/2016/4523960
Jiangwei Liu, Hong Zhao, Jinlong Liu, A. Maréchal, Wei Wang
{"title":"Semiconductors: Materials, Physics, and Devices","authors":"Jiangwei Liu, Hong Zhao, Jinlong Liu, A. Maréchal, Wei Wang","doi":"10.1155/2016/4523960","DOIUrl":"https://doi.org/10.1155/2016/4523960","url":null,"abstract":"1Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 2Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China 3School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 4School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-2"},"PeriodicalIF":0.4,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/4523960","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64386009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process 利用纳米栅极凹槽工艺研究完全耗尽SOI mosfet的异常DIBL效应
IF 0.4
Active and Passive Electronic Components Pub Date : 2015-10-28 DOI: 10.1155/2015/609828
A. Karsenty, A. Chelly
{"title":"Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process","authors":"A. Karsenty, A. Chelly","doi":"10.1155/2015/609828","DOIUrl":"https://doi.org/10.1155/2015/609828","url":null,"abstract":"Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness () as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) for characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL) effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2015 1","pages":"1-5"},"PeriodicalIF":0.4,"publicationDate":"2015-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/609828","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"65056623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A High Efficiency Li-Ion Battery LDO-Based Charger for Portable Application 一种便携式高效锂离子电池ldo充电器
IF 0.4
Active and Passive Electronic Components Pub Date : 2015-09-07 DOI: 10.1155/2015/591986
Youssef Ziadi, H. Qjidaa
{"title":"A High Efficiency Li-Ion Battery LDO-Based Charger for Portable Application","authors":"Youssef Ziadi, H. Qjidaa","doi":"10.1155/2015/591986","DOIUrl":"https://doi.org/10.1155/2015/591986","url":null,"abstract":"This paper presents a high efficiency Li-ion battery LDO-based charger IC which adopted a three-mode control: trickle constant current, fast constant current, and constant voltage modes. The criteria of the proposed Li-ion battery charger, including high accuracy, high efficiency, and low size area, are of high importance. The simulation results provide the trickle current of 116 mA, maximum charging current of 448 mA, and charging voltage of 4.21 V at the power supply of 4.8–5 V, using 0.18 μm CMOS technology.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2015 1","pages":"1-9"},"PeriodicalIF":0.4,"publicationDate":"2015-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/591986","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"65048196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Thermomechanical Behaviour of a PWB by Speckle Interferometry Technique 用散斑干涉技术研究PWB的热力学行为
IF 0.4
Active and Passive Electronic Components Pub Date : 2015-08-18 DOI: 10.1155/2015/141583
B. Trentadue, Giuseppe Illuzzi
{"title":"Thermomechanical Behaviour of a PWB by Speckle Interferometry Technique","authors":"B. Trentadue, Giuseppe Illuzzi","doi":"10.1155/2015/141583","DOIUrl":"https://doi.org/10.1155/2015/141583","url":null,"abstract":"The speckle interferometry technique has been used in this work in order to determine the thermomechanical behaviour of Printed Wiring Board (PWB) (circuits) of a radio integrated with tape player and speakers. A preliminary experiment of such technique has been carried out on a single electronic component (silicon transistor), during the thermal transient and at the steady state. The thermal deformation and stresses on PWB have been obtained through related experimental analyses on both cases. The results showed a very good applicability of speckle technique on the irregular object surface as PWB.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2015 1","pages":"1-6"},"PeriodicalIF":0.4,"publicationDate":"2015-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/141583","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64804043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Very Compact and Sharp Roll-Off Low-Pass Filter with Four Transmission Zeros 一个非常紧凑和锐利的滚降低通滤波器与四个传输零
IF 0.4
Active and Passive Electronic Components Pub Date : 2015-08-11 DOI: 10.1155/2015/806276
Yang Xiao, Lin Li
{"title":"A Very Compact and Sharp Roll-Off Low-Pass Filter with Four Transmission Zeros","authors":"Yang Xiao, Lin Li","doi":"10.1155/2015/806276","DOIUrl":"https://doi.org/10.1155/2015/806276","url":null,"abstract":"A novel structure with sharp roll-off, wide stopband, and very compact size is presented in this paper. By combining a capacitor-embedded transmission line ring and two shunt open stubs, this structure exhibits a high-performance three-pole low-pass filter (LPF) response with four generated transmission zeros. With the help of these four transmission zeros, the proposed LPF achieves improved roll-off rate, extended stopband, and significantly very compact size. To verify the feasibility of the proposed structure, a prototype LPF having the cut-off frequency at 0.63 GHz is designed, fabricated, and measured as an illustrative example. Final result shows that a roll-off rate of 109.3 dB/GHz along with a relative stopband bandwidth of 114.6% can be obtained. Moreover, the filter dimensions are as small as 15.7 mm × 26.9 mm, that is, , where is the guided wavelength at the cut-off frequency. The filter structure is simple and easy to fabricate as well.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2015 1","pages":"1-6"},"PeriodicalIF":0.4,"publicationDate":"2015-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2015/806276","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"65157401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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