Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2016-01-01 DOI:10.1155/2016/6068171

Y. Omura

引用次数: 1

Abstract

This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2 layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.

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带非抛物性对纳米SOI MOSFET阈值电压的影响

本文重新考虑了传统的非抛物带模型的数学表达式，提出了一个考虑导带非抛物性的导带电子有效质量模型。结果表明，该模型对厚度小于10nm的硅层和被SiO2层包裹的硅层具有较好的模拟效果。讨论的主要部分集中在受绝缘体势垒限制的低维电子系统上。为了验证我们考虑的可行性，将该模型应用于纳米级SOI finfet的阈值电压，并与先前的实验结果进行了比较。本文还讨论了在非抛物条件下价带空穴有效质量的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.

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