一个非常紧凑和锐利的滚降低通滤波器与四个传输零

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2015-08-11 DOI:10.1155/2015/806276

Yang Xiao, Lin Li

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引用次数: 4

摘要

本文提出了一种新颖的结构，具有急剧滚转、宽阻带和非常紧凑的尺寸。通过结合电容嵌入式传输线环和两个并联开路存根，该结构具有高性能的三极低通滤波器(LPF)响应，并产生四个传输零。在这四个传输零的帮助下，所提出的LPF实现了改进的滚转率，延长了阻带，并且显着非常紧凑的尺寸。为了验证所提出结构的可行性，设计、制作了截止频率为0.63 GHz的LPF原型，并进行了测量。最终结果表明，该电路的滚降率为109.3 dB/GHz，相对阻带带宽为114.6%。滤波器尺寸小至15.7 mm × 26.9 mm，即，其中为截止频率处的导光波长。该滤波器结构简单，易于制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Very Compact and Sharp Roll-Off Low-Pass Filter with Four Transmission Zeros

A novel structure with sharp roll-off, wide stopband, and very compact size is presented in this paper. By combining a capacitor-embedded transmission line ring and two shunt open stubs, this structure exhibits a high-performance three-pole low-pass filter (LPF) response with four generated transmission zeros. With the help of these four transmission zeros, the proposed LPF achieves improved roll-off rate, extended stopband, and significantly very compact size. To verify the feasibility of the proposed structure, a prototype LPF having the cut-off frequency at 0.63 GHz is designed, fabricated, and measured as an illustrative example. Final result shows that a roll-off rate of 109.3 dB/GHz along with a relative stopband bandwidth of 114.6% can be obtained. Moreover, the filter dimensions are as small as 15.7 mm × 26.9 mm, that is, , where is the guided wavelength at the cut-off frequency. The filter structure is simple and easy to fabricate as well.

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.