准分布式传感测量应用中光纤光栅应变传感器的解耦优化

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
F. Chaoui, O. Aghzout, Mounia Chakkour, M. E. Yakhloufi
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引用次数: 15

摘要

本文介绍了一种用于准分布式应变传感的新型光纤布拉格光栅传感器优化设计方法。所提出的优化的主要目标是获得高于90%的反射率水平和约−40 dB的旁瓣电平,这适用于准分布式应变传感应用。为此,研究了不同的设计参数,如消光轮廓、光栅长度和折射率,以增强和优化FBGS的设计。然后,根据反射率、旁瓣电平(SLL)和半最大值全宽度(FWHM)与其他作者提出的apodization剖面进行了性能比较。优化后的传感器集成在由8个传感器组成的准分布式传感系统上,具有较高的可靠性。在准分布式系统中,每个通道的应变灵敏度范围也很宽。结果证明了该优化方法的有效性,可进一步应用于任何准分布式传感应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Apodization Optimization of FBG Strain Sensor for Quasi-Distributed Sensing Measurement Applications
A novel optimized apodization of Fiber Bragg Grating Sensor (FBGS) for quasi-distributed strain sensing applications is developed and introduced in this paper. The main objective of the proposed optimization is to obtain a reflectivity level higher than 90% and a side lobe level around −40 dB, which is suitable for use in quasi-distributed strain sensing application. For this purpose, different design parameters as apodization profile, grating length, and refractive index have been investigated to enhance and optimize the FBGS design. The performance of the proposed apodization has then been compared in terms of reflectivity, side lobe level (SLL), and full width at half maximum (FWHM) with apodization profiles proposed by other authors. The optimized sensor is integrated on quasi-distributed sensing system of 8 sensors demonstrating high reliability. Wide strain sensitivity range for each channel has also been achieved in the quasi-distributed system. Results prove the efficiency of the proposed optimization which can be further implemented for any quasi-distributed sensing application.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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