Active and Passive Electronic Components最新文献_第7页

Analysis of Random Variation in Subthreshold FGMOSFET 亚阈值FGMOSFET的随机变化分析

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Active and Passive Electronic Components Pub Date : 2016-07-28 DOI: 10.1155/2016/3741250

R. Banchuin

引用次数: 1

Color Calibration for Colorized Vision System with Digital Sensor and LED Array Illuminator 基于数字传感器和LED阵列光源的彩色视觉系统色彩校正

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Active and Passive Electronic Components Pub Date : 2016-07-14 DOI: 10.1155/2016/7467165

Zhenmin Zhu, Ruichao Song, Hui Luo, Jun Xu, Shiming Chen

{"title":"Color Calibration for Colorized Vision System with Digital Sensor and LED Array Illuminator","authors":"Zhenmin Zhu, Ruichao Song, Hui Luo, Jun Xu, Shiming Chen","doi":"10.1155/2016/7467165","DOIUrl":"https://doi.org/10.1155/2016/7467165","url":null,"abstract":"Color measurement by the colorized vision system is a superior method to achieve the evaluation of color objectively and continuously. However, the accuracy of color measurement is influenced by the spectral responses of digital sensor and the spectral mismatch of illumination. In this paper, two-color vision system illuminated by digital sensor and LED array, respectively, is presented. The Polynomial-Based Regression method is applied to solve the problem of color calibration in the sRGB and color spaces. By mapping the tristimulus values from RGB to sRGB color space, color difference between the estimated values and the reference values is less than . Additionally, the mapping matrix has proved a better performance in reducing the color difference, and it is introduced subsequently into the colorized vision system proposed for a better color measurement. Necessarily, the printed matter of clothes and the colored ceramic tile are chosen as the application experiment samples of our colorized vision system. As shown in the experimental data, the average color difference of images is less than . It indicates that a better performance of color measurement is obtained via the colorized vision system proposed.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-16"},"PeriodicalIF":0.4,"publicationDate":"2016-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/7467165","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64521930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching 多谐波匹配高效k波段MMIC中功率放大器设计及热可靠性分析

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Active and Passive Electronic Components Pub Date : 2016-05-19 DOI: 10.1155/2016/6295405

Yong-Heng Shang, Hui Xu, Jiongjiong Mo, Zhiyu Wang, Xiuqin Xu, Z. Tu, X. Zhang, H. Zheng, W. Chen, Faxin Yu

引用次数: 4

A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation 用于电路仿真的磁隧道结建模研究进展

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Active and Passive Electronic Components Pub Date : 2016-05-18 DOI: 10.1155/2016/3858621

H. Lim, Seungjun Lee, Hyungsoon Shin

{"title":"A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation","authors":"H. Lim, Seungjun Lee, Hyungsoon Shin","doi":"10.1155/2016/3858621","DOIUrl":"https://doi.org/10.1155/2016/3858621","url":null,"abstract":"Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs) is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG) equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-12"},"PeriodicalIF":0.4,"publicationDate":"2016-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/3858621","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64352892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Corrigendum to “Analysis of the Coupling Coefficient in Inductive Energy Transfer Systems” “电感能量传递系统中耦合系数的分析”的勘误表

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Active and Passive Electronic Components Pub Date : 2016-05-10 DOI: 10.1155/2016/5929347

Rafael Mendes Duarte, Gordana Klaric Felic

引用次数: 43

Design of Wide-Band Bandpass Filter Using Composite Right/Left-Handed Transmission Line Structure 基于复合左右传输线结构的宽带带通滤波器设计

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Active and Passive Electronic Components Pub Date : 2016-04-11 DOI: 10.1155/2016/6532010

Baoping Ren, Haiwen Liu, X. Guan, Pin Wen, Xiang Xiao, Zhewang Ma

引用次数: 4

Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors 基于建模有机薄膜晶体管的6位连续逼近ADC的设计与仿真

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Active and Passive Electronic Components Pub Date : 2016-03-15 DOI: 10.1155/2016/7201760

H. Pham, Thang Nguyen, L. Pham-Nguyen, H. Sakai, T. T. Dao

{"title":"Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors","authors":"H. Pham, Thang Nguyen, L. Pham-Nguyen, H. Sakai, T. T. Dao","doi":"10.1155/2016/7201760","DOIUrl":"https://doi.org/10.1155/2016/7201760","url":null,"abstract":"We have demonstrated a method for using proper models of pentacene P-channel and fullerene N-channel thin-film transistors (TFTs) in order to design and simulate organic integrated circuits. Initially, the transistors were fabricated, and we measured their main physical and electrical parameters. Then, these organic TFTs (OTFTs) were modeled with support of an organic process design kit (OPDK) added in Cadence. The key specifications of the modeled elements were extracted from measured data, whereas the fitting ones were elected to replicate experimental curves. The simulating process proves that frequency responses of the TFTs cover all biosignal frequency ranges; hence, it is reasonable to deploy the elements to design integrated circuits used in biomedical applications. Complying with complementary rules, the organic circuits work properly, including logic gates, flip-flops, comparators, and analog-to-digital converters (ADCs) as well. The proposed successive-approximation-register (SAR) ADC consumes a power of 883.7 µW and achieves an ENOB of 5.05 bits, a SNR of 32.17 dB at a supply voltage of 10 V, and a sampling frequency of about 2 KHz.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-11"},"PeriodicalIF":0.4,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/7201760","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64508966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Bus Implementation Using New Low Power PFSCL Tristate Buffers 使用新型低功耗PFSCL三态缓冲器的总线实现

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Active and Passive Electronic Components Pub Date : 2016-02-29 DOI: 10.1155/2016/4517292

N. Pandey, Bharat Choudhary, K. Gupta, Ankit Mittal

{"title":"Bus Implementation Using New Low Power PFSCL Tristate Buffers","authors":"N. Pandey, Bharat Choudhary, K. Gupta, Ankit Mittal","doi":"10.1155/2016/4517292","DOIUrl":"https://doi.org/10.1155/2016/4517292","url":null,"abstract":"This paper proposes new positive feedback source coupled logic (PFSCL) tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-8"},"PeriodicalIF":0.4,"publicationDate":"2016-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/4517292","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64385781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Energy-Aware Low-Power CMOS LNA with Process-Variations Management 具有工艺变化管理的能量感知低功耗CMOS LNA

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Active and Passive Electronic Components Pub Date : 2016-02-18 DOI: 10.1155/2016/8351406

Jorge L. Gonzalez, R. Moreno, J. C. Cruz, D. Vázquez

引用次数: 0

A Novel Inverter Topology for Single-Phase Transformerless PV System 一种单相无变压器光伏系统逆变器拓扑结构

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Active and Passive Electronic Components Pub Date : 2016-01-13 DOI: 10.1155/2016/1962438

H. Cao

引用次数: 3