亚阈值FGMOSFET的随机变化分析

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
R. Banchuin
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引用次数: 1

摘要

浮栅金属氧化物半导体场效应晶体管(FGMOSFET)是一种经常被引用的基于半导体的电子器件,工作在根据漏极电流()定义的亚阈值区域,本研究提出了对其性能随机变化的分析。是有趣的,因为它是直接可测量的,可以作为决定其他的基础。所有相关的制造过程引起的器件水平随机变化,它们的统计相关性,以及低电压/低功率操作条件都被考虑在内。分析结果与纳米级SPICE BSIM4基准的拟合精度非常高,分析结果非常准确。利用这一结果,可以找到最小化变化的策略,并可以分析任何基于亚阈值的FGMOSFET电路的电路电平参数的变化。研究结果对基于亚阈值FGMOSFET的变异性感知电路的设计是有益的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Random Variation in Subthreshold FGMOSFET
The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (), has been proposed in this research. is of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statistical correlations, and low voltage/low power operating condition have been taken into account. The analysis result has been found to be very accurate since it can fit the nanometer level SPICE BSIM4 based reference with very high accuracy. By using such result, the strategies for minimizing variation in can be found and the analysis of variation in the circuit level parameter of any subthreshold FGMOSFET based circuit can be performed. So, the result of this research has been found to be beneficial to the variability aware design of subthreshold FGMOSFET based circuit.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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