{"title":"亚阈值FGMOSFET的随机变化分析","authors":"R. Banchuin","doi":"10.1155/2016/3741250","DOIUrl":null,"url":null,"abstract":"The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (), has been proposed in this research. is of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statistical correlations, and low voltage/low power operating condition have been taken into account. The analysis result has been found to be very accurate since it can fit the nanometer level SPICE BSIM4 based reference with very high accuracy. By using such result, the strategies for minimizing variation in can be found and the analysis of variation in the circuit level parameter of any subthreshold FGMOSFET based circuit can be performed. So, the result of this research has been found to be beneficial to the variability aware design of subthreshold FGMOSFET based circuit.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/3741250","citationCount":"1","resultStr":"{\"title\":\"Analysis of Random Variation in Subthreshold FGMOSFET\",\"authors\":\"R. Banchuin\",\"doi\":\"10.1155/2016/3741250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (), has been proposed in this research. is of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statistical correlations, and low voltage/low power operating condition have been taken into account. The analysis result has been found to be very accurate since it can fit the nanometer level SPICE BSIM4 based reference with very high accuracy. By using such result, the strategies for minimizing variation in can be found and the analysis of variation in the circuit level parameter of any subthreshold FGMOSFET based circuit can be performed. So, the result of this research has been found to be beneficial to the variability aware design of subthreshold FGMOSFET based circuit.\",\"PeriodicalId\":43355,\"journal\":{\"name\":\"Active and Passive Electronic Components\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2016-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2016/3741250\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Active and Passive Electronic Components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2016/3741250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2016/3741250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Analysis of Random Variation in Subthreshold FGMOSFET
The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (), has been proposed in this research. is of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statistical correlations, and low voltage/low power operating condition have been taken into account. The analysis result has been found to be very accurate since it can fit the nanometer level SPICE BSIM4 based reference with very high accuracy. By using such result, the strategies for minimizing variation in can be found and the analysis of variation in the circuit level parameter of any subthreshold FGMOSFET based circuit can be performed. So, the result of this research has been found to be beneficial to the variability aware design of subthreshold FGMOSFET based circuit.
期刊介绍:
Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.