Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
H. Pham, Thang Nguyen, L. Pham-Nguyen, H. Sakai, T. T. Dao
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引用次数: 6

Abstract

We have demonstrated a method for using proper models of pentacene P-channel and fullerene N-channel thin-film transistors (TFTs) in order to design and simulate organic integrated circuits. Initially, the transistors were fabricated, and we measured their main physical and electrical parameters. Then, these organic TFTs (OTFTs) were modeled with support of an organic process design kit (OPDK) added in Cadence. The key specifications of the modeled elements were extracted from measured data, whereas the fitting ones were elected to replicate experimental curves. The simulating process proves that frequency responses of the TFTs cover all biosignal frequency ranges; hence, it is reasonable to deploy the elements to design integrated circuits used in biomedical applications. Complying with complementary rules, the organic circuits work properly, including logic gates, flip-flops, comparators, and analog-to-digital converters (ADCs) as well. The proposed successive-approximation-register (SAR) ADC consumes a power of 883.7 µW and achieves an ENOB of 5.05 bits, a SNR of 32.17 dB at a supply voltage of 10 V, and a sampling frequency of about 2 KHz.
基于建模有机薄膜晶体管的6位连续逼近ADC的设计与仿真
我们已经证明了一种方法,使用适当的模型的并五烯p沟道和富勒烯n沟道薄膜晶体管(TFTs),以设计和模拟有机集成电路。最初,晶体管被制造出来,我们测量了它们的主要物理和电气参数。然后,在Cadence中添加的有机工艺设计工具包(OPDK)的支持下,对这些有机TFTs (OTFTs)进行建模。从实测数据中提取模型要素的关键参数,选择拟合参数来复制实验曲线。仿真结果表明,TFTs的频率响应覆盖了生物信号的所有频率范围;因此,部署这些元件来设计用于生物医学应用的集成电路是合理的。符合互补规则的有机电路,包括逻辑门、触发器、比较器和模数转换器(adc)也能正常工作。所提出的逐次逼近寄存器(SAR) ADC功耗为883.7µW,在电源电压为10 V时,ENOB为5.05位,信噪比为32.17 dB,采样频率约为2 KHz。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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