发布求助
文献互助 智能选刊 最新文献

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual最新文献

筛选
英文 中文
Effect of Scratch Stress on the Surface Hardness and Inner Structures of a Capacitive Fingerprint Sensor LSI 划痕应力对电容式指纹传感器LSI表面硬度和内部结构的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369925
N. Shimoyama, S. Shigematsu, H. Morimura, T. Shimamura, T. Kumazaki, M. Nakanishi, H. Ishii, K. Machida
{"title":"Effect of Scratch Stress on the Surface Hardness and Inner Structures of a Capacitive Fingerprint Sensor LSI","authors":"N. Shimoyama, S. Shigematsu, H. Morimura, T. Shimamura, T. Kumazaki, M. Nakanishi, H. Ishii, K. Machida","doi":"10.1109/RELPHY.2007.369925","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369925","url":null,"abstract":"The authors performed a scratch test in which a weighted needle applies scratch stress to the surface of a capacitive fingerprint sensor large scale integration (LSI), which has a grounded wall (GND wall) structure where each sensor plate is surrounded by a lattice-like wall. The scratch stress degrades not only the sensor's surface but also the metal interlayer. Increasing the thickness of the surface passivation film and that of the interlayer reduce the degradation of the surface and inner structures. To confirm the influence of thick passivation film on the electrostatic discharge (ESD) hardness and the intensity of sensing of the fingerprint sensor LSI, the authors performed an air discharge test and fingerprint identification. The tests show that a thick passivation film and a thick interlayer are effective in preventing scratch stress with ESD hardness and the intensity of sensing of the fingerprint sensor LSI.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115037224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability 氮对负偏置温度不稳定性频率依赖性的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369571
S. Wang, D. Ang, G. Du
{"title":"The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability","authors":"S. Wang, D. Ang, G. Du","doi":"10.1109/RELPHY.2007.369571","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369571","url":null,"abstract":"Negative-bias temperature instability (NBTI) of the ultra-thin oxynitride gate p-MOSFET is studied as a function of frequency under unipolar ac gate stress. Device threshold voltage shift |DeltaVt| is shown to exhibit an inverse power-law dependence on frequency, i.e. |DeltaVt| prop fgamma, where the exponent gamma ~ 0.042 for p-MOSFETs (A) with ~ 1.2 at. % nitrogen concentration [N] at the Si-SiO2 interface. The exponent y is observed to decrease with increased [N] (gamma ~ 0.017 for p-MOSFETs (B) with [N] ~ 4.2 at. %), indicating a much weaker NBTI frequency dependence in more heavily nitrided ultra-thin gate p-MOSFETs. Analysis shows that the weaker frequency dependence is due to the increased generation and locking-in of nitrogen-related deep-level hole traps, which suppress the recovery of the p-MOSFET. The findings reveal important implications of the nitrogen-driven NBTI mechanism on high-frequency circuit operation.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123451331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Investigation of External Latchup 外闭锁的研究
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369970
F. Farbiz, E. Rosenbaum
{"title":"An Investigation of External Latchup","authors":"F. Farbiz, E. Rosenbaum","doi":"10.1109/RELPHY.2007.369970","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369970","url":null,"abstract":"Circuits are more susceptible to external latchup at elevated temperatures not only because the PNPN trigger current is lowered, but also because the minority carrier collection efficiency is increased. Collection efficiency does not scale linearly with the dimensions of the N-well. PNPN structures that are oriented perpendicular to a substrate current injector are more susceptible to latchup than are those oriented parallel","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122819566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs 温度和电压相关的藻类/gan hemt射频降解研究
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369954
R. Coffie, Y. Chen, I. Smorchkova, B. Heying, V. Gambin, W. Sutton, Y. Chou, W. Luo, M. Wojtowicz, A. Oki
{"title":"Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs","authors":"R. Coffie, Y. Chen, I. Smorchkova, B. Heying, V. Gambin, W. Sutton, Y. Chou, W. Luo, M. Wojtowicz, A. Oki","doi":"10.1109/RELPHY.2007.369954","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369954","url":null,"abstract":"The reaction-diffusion limited trap generation model used to explain MOSFET degradation has been applied to GaN HEMT degradation. An analytical expression to describe the time dependence of RF output power has been derived based on this model. In addition, the voltage and temperature dependence of the fitting parameters have been determined.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129917249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Hybrid Grain-Continuum Model for Thermo-Mechanical Stresses in Polycrystalline Cu 3D IC Vias 多晶Cu三维集成电路过孔中热-机械应力的混合晶粒-连续介质模型
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369992
M. Bloomfield, D. N. Bentz, V. Sukharev, T. Cale
{"title":"Hybrid Grain-Continuum Model for Thermo-Mechanical Stresses in Polycrystalline Cu 3D IC Vias","authors":"M. Bloomfield, D. N. Bentz, V. Sukharev, T. Cale","doi":"10.1109/RELPHY.2007.369992","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369992","url":null,"abstract":"We introduce an approach to compute stresses in structures in which grain structures are important. The approach is a hybrid of continuum representations and 3D 'grain-continuum' (GC) models; i.e., models in which grain boundaries are represented and tracked. Stresses due to temperature changes in 3D IC vias are used as to demonstrate our approach. We focus on determining how large the GC region needs to be; that is, how much the computations can be simplified.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128211780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Physics-Based Crystallization Model for Retention in Phase-Change Memories 相变记忆中基于物理的保持结晶模型
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369949
U. Russo, D. Ielmini, A. Lacaita
{"title":"A Physics-Based Crystallization Model for Retention in Phase-Change Memories","authors":"U. Russo, D. Ielmini, A. Lacaita","doi":"10.1109/RELPHY.2007.369949","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369949","url":null,"abstract":"A new model for data retention in phase-change memory cells is proposed. The model describes the formation of crystalline grains in the amorphous phase according to the standard nucleation theory. A conduction percolation concept is then applied to calculate the crystallization time for the cell. The model is used to account for the experimentally extracted nucleation/growth parameter and to provide a physics-based extrapolation method to predict retention lifetime at relatively low temperature. The sensitivity of the extrapolated results on different approximations for the Gibbs free energy of amorphous-to-crystalline transition and to material-related crystallization parameters is finally analyzed.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128837183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies 90nm和65nm CMOS工艺中基于scr的ESD保护器件的评价
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369914
J. di Sarro, K. Chatty, R. Gauthier, E. Rosenbaum
{"title":"Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies","authors":"J. di Sarro, K. Chatty, R. Gauthier, E. Rosenbaum","doi":"10.1109/RELPHY.2007.369914","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369914","url":null,"abstract":"The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128889921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Moisture Related Low-K Dielectric Reliability Before and After Thermal Annealing 热退火前后与水分相关的低k介电可靠性
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369923
Yunlong Li, I. Ciofi, L. Carbonell, K. Maex, Z. Tokei
{"title":"Moisture Related Low-K Dielectric Reliability Before and After Thermal Annealing","authors":"Yunlong Li, I. Ciofi, L. Carbonell, K. Maex, Z. Tokei","doi":"10.1109/RELPHY.2007.369923","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369923","url":null,"abstract":"A systematic investigation of moisture related SiOC:H low-k dielectric reliability before and after thermal annealing was conducted. With the physisorbed moisture desorbed by thermal annealing at 190degC, the SiOC:H low-k dielectric shows a reduced leakage current and an improved TDDB lifetime. However, due to some more tightly bound OH-groups in the dielectric, the SiOC:H low-k reliability is still far below that of an optimized integration scheme. The observed failure mechanism as indicated by TDDB thermal activation energy before and after annealing does not change. It is also found that the TDDB thermal activation energy is voltage (field) independent within confidence bounds, suggesting a mixing of disturbed bonds for SiOC:H low-k dielectric breakdown","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131019131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown 应力条件下互连介质寿命的建模和时变介质击穿的新外推方法
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369921
G. Haase, J. McPherson
{"title":"Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown","authors":"G. Haase, J. McPherson","doi":"10.1109/RELPHY.2007.369921","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369921","url":null,"abstract":"Advanced microelectronics interconnect systems can have metal leads several hundred meters long with minimum metal to metal spacing of <100nm. The low-k dielectric between adjacent metal lines has a lower dielectric breakdown strength compared to gate oxides. Accelerated testing of the interconnect time-dependent dielectrics breakdown (TDDB) is required during the development of new technology nodes, to ensure the reliability of these systems. This paper presents simulations that show how actual line-to-line spacing variations influence test results such that they can predict too low product lifetime. In fact, it is argued here that one can adhere to a conservative model for the lifetime dependence on the electric field (such as the is-model) and still pass stringent reliability requirements if the accelerated breakdown test results distributions are interpreted correctly.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128438995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Quantum Mechanical Treatment of Si-O Bond Breakage in Silica Under Time Dependent Dielectric Breakdown Testing 随时间介电击穿测试中硅- o键断裂的量子力学处理
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369893
Joe W. McPherson
{"title":"Quantum Mechanical Treatment of Si-O Bond Breakage in Silica Under Time Dependent Dielectric Breakdown Testing","authors":"Joe W. McPherson","doi":"10.1109/RELPHY.2007.369893","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369893","url":null,"abstract":"Using a generalized Mie-Gruneisen bonding potential, a quantum mechanical treatment (WKB method) for Si-O bond breakage in silica is presented under the conditions of high electric field, hole injection and hydrogen release. The full spectrum of bound-state energy eigenvalues is used to calculate the transmission probability whereby bond breakage occurs when the Si-ion goes from 4-fold to 3-fold coordination. When this full spectrum of bound-state energy eigenvalues is considered, it is shown that, due to the mass of the Si-ion and the width of the potential energy barrier separating the 4-fold and 3-fold coordinated bonding positions, the tunneling probability is relatively small and thus the transmission probability is described well by thermionic emission. It is further shown that stretched bonds, hole capture and hydrogen release can all have a significant impact on the barrier height and thus greatly impact the transmission probability.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"340 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133153471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信