{"title":"外闭锁的研究","authors":"F. Farbiz, E. Rosenbaum","doi":"10.1109/RELPHY.2007.369970","DOIUrl":null,"url":null,"abstract":"Circuits are more susceptible to external latchup at elevated temperatures not only because the PNPN trigger current is lowered, but also because the minority carrier collection efficiency is increased. Collection efficiency does not scale linearly with the dimensions of the N-well. PNPN structures that are oriented perpendicular to a substrate current injector are more susceptible to latchup than are those oriented parallel","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"An Investigation of External Latchup\",\"authors\":\"F. Farbiz, E. Rosenbaum\",\"doi\":\"10.1109/RELPHY.2007.369970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Circuits are more susceptible to external latchup at elevated temperatures not only because the PNPN trigger current is lowered, but also because the minority carrier collection efficiency is increased. Collection efficiency does not scale linearly with the dimensions of the N-well. PNPN structures that are oriented perpendicular to a substrate current injector are more susceptible to latchup than are those oriented parallel\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Circuits are more susceptible to external latchup at elevated temperatures not only because the PNPN trigger current is lowered, but also because the minority carrier collection efficiency is increased. Collection efficiency does not scale linearly with the dimensions of the N-well. PNPN structures that are oriented perpendicular to a substrate current injector are more susceptible to latchup than are those oriented parallel