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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

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An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs 一种改进的可扩展自洽迭代SiGe HBTs热阻模型
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738953
S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer
{"title":"An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs","authors":"S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer","doi":"10.1109/BCTM.2016.7738953","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738953","url":null,"abstract":"In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120876549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 30GS/s 6bit SiGe ADC with input bandwidth over 18GHz and full data rate interface 30GS/s 6位SiGe ADC，输入带宽超过18GHz，全数据速率接口
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738968
Danyu Wu, Lei Zhou, Yinkun Huang, Peng Wang, Jin Wu, Zhi Jin, Xinyu Liu
{"title":"A 30GS/s 6bit SiGe ADC with input bandwidth over 18GHz and full data rate interface","authors":"Danyu Wu, Lei Zhou, Yinkun Huang, Peng Wang, Jin Wu, Zhi Jin, Xinyu Liu","doi":"10.1109/BCTM.2016.7738968","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738968","url":null,"abstract":"In this paper, a time-interleaved 30GS/s 6bit ADC fabricated in 0.18μm SiGe BiCMOS technology has been demonstrated. A bandwidth boosting technique and packaging solution has been proposed which enables the ADC to achieve input bandwidth over 18GHz. A full data rate interface is integrated to transmit all the data in real time. The ADC has a SFDR >35dBc over the entire Nyquist frequency. An effective number of bits (ENOB) above 5.0 are achieved for low frequency input tones, dropping to 3.5 at 16GHz.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132366322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Injection locking circuit techniques for high-efficiency millimeter-wave transmitter arrays in SiGe and CMOS SOI processes SiGe和CMOS SOI制程中高效毫米波发射阵列的注入锁定电路技术
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738975
J. Buckwalter
{"title":"Injection locking circuit techniques for high-efficiency millimeter-wave transmitter arrays in SiGe and CMOS SOI processes","authors":"J. Buckwalter","doi":"10.1109/BCTM.2016.7738975","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738975","url":null,"abstract":"Millimeter-wave systems require circuit innovations that enable high efficiency with complex waveforms. Injection locking circuit techniques are presented that enable low-power outphasing modulation and phase shifting for millimeter-wave radio transmitters integrated in highly-scaled Silicon CMOS and BiCMOS technologies. This paper reviews the efficiency penalties for operating arrays under back-off conditions to compare the advantages of transmit architectures at mm-wave bands. A microwave injection locking outphasing modulator is described to realize wideband, high-efficiency operation confronting these array architectures. An injection-locked outphasing modulator circuit is implemented in 45-nm SOI CMOS and exhibits 22.7% overall system efficiency with 64-QAM at 2.1% EVM. Injection locking techniques for phase shifters are demonstrated to offer high phase and low amplitude variation in a 90-nm SiGe BiCMOS 2 × 2 transmit/receiver phased array at 71-86 GHz.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133959243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways 超越边界:通过以反直觉的方式使用SiGe hbt来实现新的电路机会
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738972
J. Cressler
{"title":"Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways","authors":"J. Cressler","doi":"10.1109/BCTM.2016.7738972","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738972","url":null,"abstract":"SiGe HBT technology has enjoyed substantial success over the past 25 years for use in realizing performance-constrained, highly-integrated mixed-signal electronics spanning the range of DC to sub-mm-wave operational frequencies. This success has been bolstered by advances in device scaling which have been truly impressive, now routinely achieving multi-hundred GHz frequencies, a fact which is currently opening many new and interesting application possibilities. Most of these emerging opportunities were never envisioned at the very beginning of this field (which is reflective of the inherent nature of innovation), and many involve using the SiGe HBT in ways which may appear counterintuitive to “classical” circuit designers. Examples include operation: in radiation environments, in inverse mode, in weak saturation, and beyond SoA boundaries. This invited paper will explore this emerging design space, both from device and circuit perspectives.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"352 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132871074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging 用于毫米波成像的0.25µm SiGe BiCMOS无源总功率辐射计
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738949
E. S. Malotaux, M. Spirito
{"title":"A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging","authors":"E. S. Malotaux, M. Spirito","doi":"10.1109/BCTM.2016.7738949","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738949","url":null,"abstract":"In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"66 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116267448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 50 Gb/s TIA in 0.25µm SiGe:C BiCMOS in folded cascode architecture with pnp HBTs 一个50 Gb/s TIA在0.25µm SiGe:C BiCMOS折叠级联结构与pnp HBTs
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738960
I. Lopez, P. Rito, A. Awny, B. Heinemann, D. Kissinger, A. Ulusoy
{"title":"A 50 Gb/s TIA in 0.25µm SiGe:C BiCMOS in folded cascode architecture with pnp HBTs","authors":"I. Lopez, P. Rito, A. Awny, B. Heinemann, D. Kissinger, A. Ulusoy","doi":"10.1109/BCTM.2016.7738960","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738960","url":null,"abstract":"This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 μm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance gain of 52.5 dBΩ and a 3 dB bandwidth of 32 GHz with a measured differential average input referred current noise density of 13.1 pA/√Hz, dissipating 70 mW of power. Clear eye diagrams up to 50 Gb/s data rate are reported. To the best of the authors' knowledge, this is the first time pnp transistors are used at such speed, achieving an overall performance comparable to, or better than, other TIA implementations in faster technologies.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126870809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications SiGe BiCMOS技术用于高速和大容量光互连应用
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738971
Thé Linh Nguyen, Arash Izadi, Gilles Denoyer
{"title":"SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications","authors":"Thé Linh Nguyen, Arash Izadi, Gilles Denoyer","doi":"10.1109/BCTM.2016.7738971","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738971","url":null,"abstract":"In this paper we will discuss the challenges of circuit design for high-speed and high-volume optical interconnect and how SiGe BiCMOS technologies are best suited to address these challenges. Advantages of SiGe BiCMOS are illustrated through examples of design requirements from optical front-ends (transimpedance amplifier (TIA) and modulator and laser driver) to clock and data recovery (CDR) and serializer and deserializer (SerDes). We will also look ahead to the future and predict product evolution and key requirements of optical interconnects and define the required performance of SiGe BiCMOS technology to address such specifications.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116772637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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