Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways

J. Cressler
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引用次数: 2

Abstract

SiGe HBT technology has enjoyed substantial success over the past 25 years for use in realizing performance-constrained, highly-integrated mixed-signal electronics spanning the range of DC to sub-mm-wave operational frequencies. This success has been bolstered by advances in device scaling which have been truly impressive, now routinely achieving multi-hundred GHz frequencies, a fact which is currently opening many new and interesting application possibilities. Most of these emerging opportunities were never envisioned at the very beginning of this field (which is reflective of the inherent nature of innovation), and many involve using the SiGe HBT in ways which may appear counterintuitive to “classical” circuit designers. Examples include operation: in radiation environments, in inverse mode, in weak saturation, and beyond SoA boundaries. This invited paper will explore this emerging design space, both from device and circuit perspectives.
超越边界:通过以反直觉的方式使用SiGe hbt来实现新的电路机会
SiGe HBT技术在过去的25年里取得了巨大的成功,用于实现跨越直流到亚毫米波工作频率范围的性能受限、高度集成的混合信号电子器件。这一成功得益于设备规模的进步,这确实令人印象深刻,现在通常可以实现数百GHz的频率,这一事实目前正在打开许多新的有趣的应用可能性。大多数这些新兴的机会在这个领域的一开始从未设想过(这反映了创新的内在本质),并且许多涉及到使用SiGe HBT的方式,这对“经典”电路设计师来说可能是违反直觉的。示例包括:在辐射环境中、在逆模式下、在弱饱和下以及在SoA边界之外的操作。本文将从器件和电路的角度探讨这一新兴的设计领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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