2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS 太赫兹带宽在p HBT技术和异质集成与硅CMOS

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738973

M. Urteaga, A. Carter, Z. Griffith, R. Pierson, J. Bergman, A. Arias, P. Rowell, J. Hacker, B. Brar, M. Rodwell

引用次数: 17

Co-simulation and co-design of chip-package-board interfaces in highly-integrated RF systems 高集成度射频系统中芯片封装板接口的协同仿真与协同设计

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738959

V. Issakov, M. Wojnowski, H. Knapp, S. Trotta, H. Forstner, K. Pressel, A. Hagelauer

{"title":"Co-simulation and co-design of chip-package-board interfaces in highly-integrated RF systems","authors":"V. Issakov, M. Wojnowski, H. Knapp, S. Trotta, H. Forstner, K. Pressel, A. Hagelauer","doi":"10.1109/BCTM.2016.7738959","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738959","url":null,"abstract":"The level of integration for RF and mm-wave systems is continuously increasing. Highly-integrated system on chip solutions have to be encapsulated in a package and assembled on a board. In addition, to be more attractive as a product, the trend goes towards further integration of passives and antennas in a package. This drives the system in package solutions. However, electrical properties of the package and board may have a significant effect on system parameters, especially at high frequencies. Hence, layout features of package and board must be carefully modelled and considered during the design. Furthermore, it is often insufficient to model chip, package and board separately, as some high-frequency effects may not be captured. An example is electromagnetic coupling between integrated coils on chip and routing traces in package. In this paper we describe considerations on co-simulation and co-design of highly-integrated RF systems by means of accurate electromagnetic modelling. We demonstrate the approach and various aspects of chip-package-board co-design based on examples of systems for various applications: 6 GHz VCO using embedded inductor; backhaul communication system in package for V-band and E-band and a four-channel 77 GHz automotive radar transceiver in a package with four dipole antennas.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122665462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

The impacts of base bias resistor and LTE 16QAM signal bandwidth on high-efficiency linear SiGe power amplifier design 基极偏置电阻和LTE 16QAM信号带宽对高效线性SiGe功率放大器设计的影响

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738967

J. Tsay, Juan José Vaquero López, D. Lie

{"title":"The impacts of base bias resistor and LTE 16QAM signal bandwidth on high-efficiency linear SiGe power amplifier design","authors":"J. Tsay, Juan José Vaquero López, D. Lie","doi":"10.1109/BCTM.2016.7738967","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738967","url":null,"abstract":"This paper investigates the design of a linear highly-efficient SiGe power amplifier (PA) where its linearity, power-added efficiency (PAE) and POUT are studied vs. different LTE 16QAM signal BW and a relatively small bias resistance Rbias is used to set up the base bias from a DC voltage source in lieu of using a large choke inductor. The PA is designed in a 0.35-μm SiGe BiCMOS technology with through-silicon via (TSV), passing the stringent LTE spectrum emission mask (SEM) at average linear POUT = 23.5/23.1/23.1 dBm with 48.0/45.2/44.6% PAE for LTE 5/10/20 MHz inputs at Rbias = 500 Ω. However, both linearity and PAE degrade when Rbias decreases to 330 Ω or increases to 1000 Ω. The adjacent channel leakage ratios ACLR1/ACLR2 exhibit over 10-21 dB degradation at Rbias = 330 Ω and 1000 Ω for LTE 20 MHz input at POUT = 23.1 dBm (P1dB = 22.3 dBm), while they are practically unchanged against Rbias for 5 MHz LTE input or at 6 dB POUT back-off at 17.1 dBm. Envelope-tracking (ET) is also used to improve PA's efficiency at back-off for Rbias = 500 Ω. The data suggests for SiGe PA design with TSV, a small bias Rbias may be used in lieu of a large inductor to save area, while its performance is dependent on the optimal bias Rbias value - too high or too low of Rbias will degrade its RF gain, stability and linearity for both CW and LTE modulated signal inputs.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116740367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

DC and RF breakdown voltage characteristics of SiGe HBTs for WiFi PA applications WiFi PA应用SiGe hbt的直流和射频击穿电压特性

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738948

V. Jain, H. Ding, R. Camillo-Castillo, A. Joseph

引用次数: 6

Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress 混合模式应力下SiGe HBTs长期老化速率分析与建模

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738958

G. Fischer

引用次数: 11

Low gate drive IGBT enabling direct control through Digital Isolator power 低栅极驱动 IGBT，可通过数字隔离器电源直接控制

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738979

E. Coyne, S. Lynch, P. McGuinness, Christine McLoughline, Catriona O'Sullivan, B. Lane, L. O'Sullivan, J. Liddy

{"title":"Low gate drive IGBT enabling direct control through Digital Isolator power","authors":"E. Coyne, S. Lynch, P. McGuinness, Christine McLoughline, Catriona O'Sullivan, B. Lane, L. O'Sullivan, J. Liddy","doi":"10.1109/BCTM.2016.7738979","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738979","url":null,"abstract":"Known to the power industry, there is an increasing functional safety need to isolate delicate control systems from the violent world of the Insulated Gate Bipolar Transistor (IGBT), which has resulted in a growing demand for Digital Isolators. This is where the gate control signal for the IGBT can be coupled across a dielectric barrier, while the barrier itself is capable of withstanding high working voltages and surge events. Preventing the formation of a complete integrated system solution for the end customer is the fact that while the control signal can be coupled across the isolation barrier - the transient power needed to drive the IGBT gate cannot. To solve that problem, this paper describes the development of an innovative IGBT architecture that targets the 1200V voltage node, has a first silicon VCE(SAT) = 2.7V at JC=10Amm-1, provides latch-up immunity, and critically has gate drive capacitances that are over two orders of magnitude smaller, at 0.58pF for every Amp of IGBT current, relative to conventional IGBT architectures that report values in the range of 70 - 150pFA-1 at 25°C. This low input capacitance opens the door for the gate of this IGBT to be directly powered by integrated magnetically coupled isolation coils. For future work, further optimization of the VCE(SAT), and transient switching times are required.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126713058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs 利用垂直超结集电极提高SiGe hbt的击穿性能

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738956

Brian R. Wier, U. Raghunathan, Zachary E. Fleetwood, Michael A. Oakley, A. Joseph, V. Jain, J. Cressler

引用次数: 3

Ge-on-insulator lateral bipolar transistors 绝缘体上的横向双极晶体管

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738942

J. Yau, J. Yoon, J. Cai, T. Ning, K. Chan, S. Engelmann, D. Park, R. Mo, G. Shahidi

引用次数: 0

Applying bipolar transistors in dynamic power supply transmitters 双极晶体管在动态电源发射机中的应用

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738974

E. McCune

引用次数: 13

Modeling of high-current damage in SiGe HBTs under pulsed stress 脉冲应力作用下SiGe HBTs的大电流损伤建模

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738969

U. Raghunathan, Brian R. Wier, Rafael Perez Martinez, Zachary E. Fleetwood, Anup P. Omprakash, Hanbin Ying, S. Zeinolabedinzadeh, J. Cressler

引用次数: 2