混合模式应力下SiGe HBTs长期老化速率分析与建模

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI:10.1109/BCTM.2016.7738958

G. Fischer

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引用次数: 11

摘要

通过对高速SiGe hts的长期混合模态应力测试，构建了紧凑模型的经验老化函数。该老化函数将老化速率的饱和度建模为应力时间和应力电流的函数，适用于该HBT类型的所有相关混合模式应力条件。此外，在高压高压高压bt上进行的1000小时应力测试表明，从长远来看，不仅可以达到饱和，甚至可以逆转老化速率。

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Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress

By means of long-term mixed-mode stress tests of high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This ageing function models saturation of the aging rate as a function of stress time and stress current and is applicable for all relevant mixed-mode stress conditions of this HBT type. Additionally, 1000h stress tests on a high-voltage HBT revealed that not only saturation but even reversal of ageing rate is possible in the long run.

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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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