{"title":"WiFi PA应用SiGe hbt的直流和射频击穿电压特性","authors":"V. Jain, H. Ding, R. Camillo-Castillo, A. Joseph","doi":"10.1109/BCTM.2016.7738948","DOIUrl":null,"url":null,"abstract":"Breakdown voltage and RF characteristics relevant for RF power amplifiers (PA) are presented in this paper. Typically, DC collector-to-emitter breakdown voltage with base open (BVCEO) or DC collector-to-base breakdown with emitter open (BVCBO) has been presented as the metric for voltage limit of PA devices. In practical PA circuits, the RF envelope voltage can swing well beyond BVCEO without causing a failure. An analysis of output power swing limitations and DC breakdown is presented with attention to biasing and temperature.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"DC and RF breakdown voltage characteristics of SiGe HBTs for WiFi PA applications\",\"authors\":\"V. Jain, H. Ding, R. Camillo-Castillo, A. Joseph\",\"doi\":\"10.1109/BCTM.2016.7738948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Breakdown voltage and RF characteristics relevant for RF power amplifiers (PA) are presented in this paper. Typically, DC collector-to-emitter breakdown voltage with base open (BVCEO) or DC collector-to-base breakdown with emitter open (BVCBO) has been presented as the metric for voltage limit of PA devices. In practical PA circuits, the RF envelope voltage can swing well beyond BVCEO without causing a failure. An analysis of output power swing limitations and DC breakdown is presented with attention to biasing and temperature.\",\"PeriodicalId\":431327,\"journal\":{\"name\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2016.7738948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2016.7738948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC and RF breakdown voltage characteristics of SiGe HBTs for WiFi PA applications
Breakdown voltage and RF characteristics relevant for RF power amplifiers (PA) are presented in this paper. Typically, DC collector-to-emitter breakdown voltage with base open (BVCEO) or DC collector-to-base breakdown with emitter open (BVCBO) has been presented as the metric for voltage limit of PA devices. In practical PA circuits, the RF envelope voltage can swing well beyond BVCEO without causing a failure. An analysis of output power swing limitations and DC breakdown is presented with attention to biasing and temperature.
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