Injection locking circuit techniques for high-efficiency millimeter-wave transmitter arrays in SiGe and CMOS SOI processes

J. Buckwalter
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Abstract

Millimeter-wave systems require circuit innovations that enable high efficiency with complex waveforms. Injection locking circuit techniques are presented that enable low-power outphasing modulation and phase shifting for millimeter-wave radio transmitters integrated in highly-scaled Silicon CMOS and BiCMOS technologies. This paper reviews the efficiency penalties for operating arrays under back-off conditions to compare the advantages of transmit architectures at mm-wave bands. A microwave injection locking outphasing modulator is described to realize wideband, high-efficiency operation confronting these array architectures. An injection-locked outphasing modulator circuit is implemented in 45-nm SOI CMOS and exhibits 22.7% overall system efficiency with 64-QAM at 2.1% EVM. Injection locking techniques for phase shifters are demonstrated to offer high phase and low amplitude variation in a 90-nm SiGe BiCMOS 2 × 2 transmit/receiver phased array at 71-86 GHz.
SiGe和CMOS SOI制程中高效毫米波发射阵列的注入锁定电路技术
毫米波系统需要电路创新,以实现复杂波形的高效率。提出了注入锁定电路技术,实现了集成在大规模硅CMOS和BiCMOS技术中的毫米波无线电发射机的低功率失相调制和相移。本文回顾了在后退条件下操作阵列的效率损失,以比较毫米波波段发射体系结构的优势。针对这些阵列结构,提出了一种微波注入锁相调制器来实现宽带、高效率的工作。在45纳米SOI CMOS中实现了注入锁相共相调制器电路,在2.1% EVM下,64-QAM的总体系统效率为22.7%。相移器的注入锁定技术在71-86 GHz的90 nm SiGe BiCMOS 2 × 2发射/接收相控阵中提供了高相位和低幅度变化。
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