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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

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Side-use of a Ge p-i-n photo diode for electrical application in a photonic BiCMOS technology Ge p-i-n光电二极管在光子BiCMOS技术中的电气应用
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738970
S. Lischke, D. Knoll, S. Tolunay-Wipf, C. Wipf, C. Mai, A. Fox, F. Herzel, M. Kaynak
{"title":"Side-use of a Ge p-i-n photo diode for electrical application in a photonic BiCMOS technology","authors":"S. Lischke, D. Knoll, S. Tolunay-Wipf, C. Wipf, C. Mai, A. Fox, F. Herzel, M. Kaynak","doi":"10.1109/BCTM.2016.7738970","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738970","url":null,"abstract":"In this paper we demonstrate the potential use of a germanium p-i-n diode, available without additional processing effort in a photonic BiCMOS technology, for electronic applications. A cut-off frequency above 400 GHz was obtained by S-parameter measurements without any certain design optimization of the diode. The device construction on SOI yields in the isolation of the diode from the substrate. Moreover, the lateral current flow enables low series resistance for the diode. Potential applications are antenna-switching or mixers.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128129406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Linear ultra-broadband NPN-only analog correlator at 33 Gbps in 130 nm SiGe BiCMOS technology 采用130纳米SiGe BiCMOS技术的33 Gbps线性超宽带npn模拟相关器
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738962
A. R. Javed, J. Scheytt, U. V. D. Ahe
{"title":"Linear ultra-broadband NPN-only analog correlator at 33 Gbps in 130 nm SiGe BiCMOS technology","authors":"A. R. Javed, J. Scheytt, U. V. D. Ahe","doi":"10.1109/BCTM.2016.7738962","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738962","url":null,"abstract":"An ultra-broadband analog correlator consisting of a four-quadrant multiplier and an ultra-fast resettable integrator using only NPN transistors was designed, fabricated, and measured. For the integrator, a cross-coupled transistor pair is used as a negative resistance generator. A novel ultra-fast reset circuit is implemented which allows to reset the integrator within very short time of 120 ps. The chip was fabricated using 130 nm SiGe BiCMOS technology with fT of 250 GHz and fmax of 300 GHz. In the measurements carried out on printed circuit board, the correlator operated without noticeable performance degradation with inputs up to 33 Gbps which correspond to a bandwidth of more than 24 GHz. The correlator exhibits high linearity with output P1dB of more than 9.9 dBm (700 mVdiff) for both inputs. It dissipates 122.5 mW for the core circuit excluding the 50 Ω output driver. To the knowledge of the authors, the circuit represents the fastest analog correlator published so far. It can be used for spread spectrum communication, radar signal processing, and measurement applications.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114602412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
The broadband Darlington amplifier as a simple benchmark circuit for compact model verification at mm-wave frequency 宽带达林顿放大器作为毫米波频率下紧凑模型验证的简单基准电路
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738952
A. Mukherjee, Chenye Lin, M. Schroter
{"title":"The broadband Darlington amplifier as a simple benchmark circuit for compact model verification at mm-wave frequency","authors":"A. Mukherjee, Chenye Lin, M. Schroter","doi":"10.1109/BCTM.2016.7738952","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738952","url":null,"abstract":"Benchmark circuit are small circuit blocks that resemble the major features of the active and passive devices for a given process technology. Such blocks are attractive for verifying the compact models delivered in process design kits as well as for demonstrating the process performance at the earliest possible time. This paper presents results of two broadband Darlington amplifier versions that were designed as a benchmark circuit during the EU DOTSEVEN project with the purpose of verifying compact models at mm-wave frequencies and under realistic circuit operating conditions. The circuits were fabricated and its measured performance is compared to simulation results.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129879598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A low phase noise tri-band LO generation for Ku and E band radios for backhauling Point-to-Point applications 一种低相位噪声的三波段LO发生器，用于Ku和E波段无线电，用于点对点应用的回程
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738966
D. Cabrera, J. Bégueret, N. Verrascina, O. Tesson, O. Mazouffre, P. Gamand
{"title":"A low phase noise tri-band LO generation for Ku and E band radios for backhauling Point-to-Point applications","authors":"D. Cabrera, J. Bégueret, N. Verrascina, O. Tesson, O. Mazouffre, P. Gamand","doi":"10.1109/BCTM.2016.7738966","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738966","url":null,"abstract":"This paper demonstrates a fully integrated tri-band LO generation system based a low phase noise 12 GHz sub-harmonic VCO and an injection locked frequency tripler (ILFT) as the signal source. The system generates simultaneously three outputs at f<sub>0</sub>, f<sub>0</sub>/2 and 2×f<sub>0</sub>, with maximum frequency of 36 GHz, 18 GHz and 72 GHz respectively. The system which is implemented in a 0.25-μm SiGe:C BiCMOS technology, has a phase noise of -107.72 dBc/Hz at 1 MHz offset from the 36 GHz signal measured at the f<sub>0</sub>-port. All outputs have a tuning range of 9.5% The in-band output power at the f<sub>0</sub>, f<sub>0</sub>/2 and 2×f<sub>0</sub> outputs is higher than 3 dBm, 0 dBm and -20 dBm respectively. The whole system draws 120 mA for a power supply of 2.5 V.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122675212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
BCTM, thirty years of success BCTM，三十年的成功
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738978
P. Davis, J. Shier
{"title":"BCTM, thirty years of success","authors":"P. Davis, J. Shier","doi":"10.1109/BCTM.2016.7738978","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738978","url":null,"abstract":"Anecdotal history of BCTM during its first thirty years, written by the originator and a faithful attendee.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116087509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications 可扩展的传感器平台，多用途全差分61和122 GHz收发器，用于MIMO雷达应用
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738954
H. Ng, M. Kucharski, D. Kissinger
{"title":"Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications","authors":"H. Ng, M. Kucharski, D. Kissinger","doi":"10.1109/BCTM.2016.7738954","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738954","url":null,"abstract":"This paper describes a scalable sensor platform consisting of several multi-purpose 61 and 122 GHz transceivers that are designed in a fully-differential architecture and implemented in a Silicon-Germanium BiCMOS technology. The former transceiver achieves a higher transmit output power as well as receive gain and is meant for applications requiring a high dynamic range, while the latter transceiver allows a higher modulation bandwidth and is meant for high resolution applications. The transceivers include a frequency multiplier that generates the 61 and 122 GHz carrier signals from a single external 30.5 GHz LO signal that is also fed to an output buffer in the transceivers. The proposed architecture enables the cascading of multiple transceivers and allows thus the implementation of a MIMO radar system with 2 different frequency bands. The transceivers are equipped with BPSK modulators as well as an I/Q receiver and can be utilized as a base to build a very flexible software-defined radar platform.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"28 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117269668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology 新型npn双极晶体管具有高增益，高早期电压和高BVceo在先进的SmartMOS技术
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738947
Xin Lin, R. Zhu
{"title":"Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology","authors":"Xin Lin, R. Zhu","doi":"10.1109/BCTM.2016.7738947","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738947","url":null,"abstract":"A high performance npn bipolar transistor has been demonstrated in a 0.13μm SOI SmartMOS™ technology. This novel bipolar transistor consists of a shallow emitter confined by shallow trench isolation (STI), a base with multiple regions each serving a different purpose without compromising one another, and a lightly doped collector region surrounded by continuous p-type regions biased with the base potential. The base region below the emitter has a relatively low dopant concentration and is crucial to the carrier transport; the relatively more heavily-doped and deep base region between the emitter and collector effectively confines the depletion of the collector; and the p-type region above the collector as well as the p-epi surrounding the collector enable the collector to be fully depleted when the collector is biased high. Attributed to these unique features, the npn bipolar transistor exhibits superior characteristics, including a high current gain of 83, a high Early voltage of 1750V, and a high BVceo of 59V.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124725129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A HICUM/L2 model for high-voltage BJTs 高压bjt的HICUM/L2模型
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738945
A. Pawlak, B. O. O hAnnaidh, M. Schroter
{"title":"A HICUM/L2 model for high-voltage BJTs","authors":"A. Pawlak, B. O. O hAnnaidh, M. Schroter","doi":"10.1109/BCTM.2016.7738945","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738945","url":null,"abstract":"Although latest developments in Si BJTs and SiGe HBTs typically focus on high-speed devices and strong competitors for high-voltage (HV) devices exist (e.g. GaAs HBTs and HEMTs), HV Si BJTs still find widespread application. This paper demonstrates the application of HICUM/L2 to Si BJTs with very high breakdown voltages and highlights the model features that are relevant for the most prominent properties of HV transistors. It further provides a guideline for parameter extraction. Very good agreement over the entire operating and a wide temperature range are obtained.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124368780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Why is there no internal collector resistance in HICUM? 为什么在HICUM中没有内部集电极电阻?
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738944
M. Schroter, S. Lehmann, A. Pawlak
{"title":"Why is there no internal collector resistance in HICUM?","authors":"M. Schroter, S. Lehmann, A. Pawlak","doi":"10.1109/BCTM.2016.7738944","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738944","url":null,"abstract":"The internal (or epi-) collector region in a bipolar (hetero-)junction transistor strongly determines the bias dependent terminal behavior. Most compact transistor model attempt to capture the current-voltage behavior of the epi-collector by a special equivalent circuit element (and associated analytical formulations) in addition to the usual transfer current source representing just the base region. This paper provides (i) theoretical proof that a separate representation of the epi-collector region in an equivalent circuit is neither required nor necessarily advantageous in terms of accuracy and (ii) a physics-based guide on how to model the epi-collector consistently if a separate description is still desired. The theoretical results are validated by numerical device simulation.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131318836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Wideband active bi-directional SiGe digital step attenuator using an active DPDT switch 使用有源DPDT开关的宽带有源双向SiGe数字阶跃衰减器
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI: 10.1109/BCTM.2016.7738961
Moon-Kyu Cho, I. Song, Zachary E. Fleetwood, J. Cressler
{"title":"Wideband active bi-directional SiGe digital step attenuator using an active DPDT switch","authors":"Moon-Kyu Cho, I. Song, Zachary E. Fleetwood, J. Cressler","doi":"10.1109/BCTM.2016.7738961","DOIUrl":"https://doi.org/10.1109/BCTM.2016.7738961","url":null,"abstract":"A 6-bit active bi-directional silicon-germanium (SiGe) digital step attenuator (DSA) with multi-octave bandwidth using an active double-pole double-throw (DPDT) switch is demonstrated. To compensate the insertion loss (IL) and frequency dependent loss characteristics of conventional passive attenuators without using any additional amplifier and equalizer, the proposed attenuator employs active DPDT switches, which provide 4-way switching and bi-directional operation. The measured gain is 7.0-9.6 dB and the input and output return loss is better than 9 dB for 2-20 GHz. The measured root mean square (RMS) amplitude and phase errors in the major state are less than 0.4 dB and 3.0 degree, respectively. The chip size is 1.43 × 1.23 mm2, including pads. The proposed active bi-directional DSA consumes 30 mA from a 2.5 V supply.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116045209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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