A HICUM/L2 model for high-voltage BJTs

Abstract

Although latest developments in Si BJTs and SiGe HBTs typically focus on high-speed devices and strong competitors for high-voltage (HV) devices exist (e.g. GaAs HBTs and HEMTs), HV Si BJTs still find widespread application. This paper demonstrates the application of HICUM/L2 to Si BJTs with very high breakdown voltages and highlights the model features that are relevant for the most prominent properties of HV transistors. It further provides a guideline for parameter extraction. Very good agreement over the entire operating and a wide temperature range are obtained.