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引用次数: 3
摘要
尽管Si bjt和SiGe hjt的最新发展通常集中在高速器件上，并且存在高压(HV)器件的强大竞争对手(例如GaAs hjt和hemt)，但HV Si bjt仍然得到广泛应用。本文演示了HICUM/L2在具有极高击穿电压的硅bjt中的应用，并强调了与高压晶体管最突出的特性相关的模型特征。进一步为参数提取提供了指导。在整个操作过程和较宽的温度范围内获得了很好的一致性。
Although latest developments in Si BJTs and SiGe HBTs typically focus on high-speed devices and strong competitors for high-voltage (HV) devices exist (e.g. GaAs HBTs and HEMTs), HV Si BJTs still find widespread application. This paper demonstrates the application of HICUM/L2 to Si BJTs with very high breakdown voltages and highlights the model features that are relevant for the most prominent properties of HV transistors. It further provides a guideline for parameter extraction. Very good agreement over the entire operating and a wide temperature range are obtained.
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